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    Method for depositing a layer on a surface of a substrate
    1.
    发明公开
    Method for depositing a layer on a surface of a substrate 有权
    一种用于在衬底表面上沉积层的方法

    公开(公告)号：EP1158071A3

    公开(公告)日：2006-07-19

    申请号：EP01111582.1

    申请日：2001-05-11

    申请人： APPLIED MATERIALS, INC.

    发明人： Rossman, Kent ,  Li, Zhuang ,  Lee, Young

    IPC分类号： C23C16/44 ,  H01L21/00

    CPC分类号： H01J37/321 ,  C23C16/045 ,  C23C16/402 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76229 ,  H01L21/76837

    摘要： A trench-fill material is deposited to fill a trench in a substrate disposed in a process chamber. An inert gas is introduced into the process chamber and a plasma is formed to heat the substrate to a preset temperature, which is typically the temperature at which deposition of the trench-fill material is to take place. The plasma is terminated upon reaching the preset temperature for the substrate. A process gas is then flowed into the process chamber without plasma excitation until the process gas flow and distribution achieve a generally steady state in the process chamber. A plasma is then formed to deposit the trench-fill material on the surface of the substrate and fill the trench. By establishing generally steady state conditions in the chamber prior to deposition, transient effects are reduced and more uniform deposition of the trench-fill material is obtained. The step of forming the plasma typically includes coupling source plasma energy into the process chamber at a total power density of at least about 15 Watts/cm 2 .

    Method and system for coating the inside of a processing chamber
    2.
    发明公开
    Method and system for coating the inside of a processing chamber 失效
    Verfahren und Anlage zur Innenbeschichtung einer Behandlungskammer

    公开(公告)号：EP0884401A1

    公开(公告)日：1998-12-16

    申请号：EP98107959.3

    申请日：1998-04-30

    申请人： Applied Materials, Inc.

    发明人： Rossman, Kent ,  Turgut, Sahin ,  M'Saad, Hichem ,  Nowak, Romould

    IPC分类号： C23C16/44 ,  C23C14/56

    CPC分类号： C23C16/4401 ,  C23C14/564 ,  C23C16/4404

    摘要： A method and apparatus for controlling the introduction of contaminates into a deposition chamber that occur naturally within the chamber components. The CVD chamber is "seasoned" with a protective layer after a dry clean operation and before a substrate is introduced into the chamber. The deposited seasoning layer has a lower diffusion rate for typical contaminants in relation to the chamber component materials and covers the chamber component, reducing the likelihood that the naturally occurring contaminants will interfere with subsequent processing steps. After deposition of the seasoning layer is complete, the chamber is used for one to n substrate deposition steps before being cleaned by another clean operation as described above and then reseasoned.

    摘要翻译： 一种用于控制将污染物引入到腔室部件内自然发生的沉积室中的方法和装置。 在干燥清洁操作之后并且在将基板引入室之前，CVD室被保护层“经过调节”。 沉积的调味剂层对于典型的污染物相对于室组分材料具有较低的扩散速率并且覆盖室组分，降低了天然存在的污染物将干扰后续处理步骤的可能性。 在调味料层的沉积完成之后，如上所述，在通过另一干净的操作进行清洁之前，将该室用于1至n个衬底沉积步骤，然后再进行处理。

    Method for heating a wafer
    4.
    发明公开
    Method for heating a wafer 有权
    Verfahren zumErwärmenvonPlättchen

    公开(公告)号：EP1227171A1

    公开(公告)日：2002-07-31

    申请号：EP01124617.0

    申请日：2001-10-15

    申请人： Applied Materials, Inc.

    发明人： Rossman, Kent

    IPC分类号： C23C16/02 ,  C23C14/02

    CPC分类号： C23C16/0209 ,  C23C14/022 ,  C23C16/0245 ,  H01J2237/022

    摘要： A method is provided for preparing a substrate for processing in a chamber that has a substrate receiving portion. The substrate is positioned within the chamber in a location not on the substrate receiving portion. A gaseous flow is provided to the chamber, from which a plasma is struck to heat the substrate. After the substrate has been heated, it is moved to the substrate receiving portion for processing.

    摘要翻译： 提供了一种制备用于在具有基板接收部分的室中进行处理的基板的方法。 衬底位于不在衬底接收部分上的位置内的腔室内。 向腔室提供气流，从其中撞击等离子体以加热衬底。 在基板被加热之后，将其移动到基板接收部分进行处理。

    Method for depositing a layer on a surface of a substrate
    5.
    发明公开
    Method for depositing a layer on a surface of a substrate 有权
    Verfahren zum Ablegen einer Schicht auf einerSubstratoberfläche

    公开(公告)号：EP1158071A2

    公开(公告)日：2001-11-28

    申请号：EP01111582.1

    申请日：2001-05-11

    申请人： Applied Materials, Inc.

    发明人： Rossman, Kent ,  Li, Zhuang ,  Lee, Young

    IPC分类号： C23C16/44 ,  H01L21/00

    CPC分类号： H01J37/321 ,  C23C16/045 ,  C23C16/402 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76229 ,  H01L21/76837

    摘要： A trench-fill material is deposited to fill a trench in a substrate disposed in a process chamber. An inert gas is introduced into the process chamber and a plasma is formed to heat the substrate to a preset temperature, which is typically the temperature at which deposition of the trench-fill material is to take place. The plasma is terminated upon reaching the preset temperature for the substrate. A process gas is then flowed into the process chamber without plasma excitation until the process gas flow and distribution achieve a generally steady state in the process chamber. A plasma is then formed to deposit the trench-fill material on the surface of the substrate and fill the trench. By establishing generally steady state conditions in the chamber prior to deposition, transient effects are reduced and more uniform deposition of the trench-fill material is obtained. The step of forming the plasma typically includes coupling source plasma energy into the process chamber at a total power density of at least about 15 Watts/cm 2 . The energy is inductively coupled into the process chamber by coupling a top coil with a top portion of the process chamber above the surface of the substrate and coupling a side coil with a side portion of the process chamber generally surrounding the side edge of the substrate. The top coil is powered at a top RF power level to produce a top power density and the side coil is powered at a side RF power level to produce a side power density. The total RF power density is equal to the sum of the top and side power densities. The top power density and the side power density desirably have a ratio of at least about 1.5. The high source plasma power density generates a high ion density plasma and produces a more directional deposition, and a higher top power density relative to the side power density produces a more uniform plasma over the substrate, resulting in improved trench fill, particularly for aggressive trenches having aspect ratios of about 3:1 to 4:1. The process gas typically includes silicon, oxygen, and an inert component having a concentration of less than about 40%, by volume. In specific embodiments, the concentration of the inert component is equal to about 0%.

    摘要翻译： 沉积沟槽填充材料以填充设置在处理室中的衬底中的沟槽。 将惰性气体引入到处理室中，并且形成等离子体以将衬底加热到​​预设温度，该预设温度通常是要在其上进行沉积沟槽填充材料的温度。 等离子体在达到基板的预设温度时终止。 然后，处理气体不经等离子体激发流入处理室，直到处理气体流动和分布在处理室中达到通常稳定的状态。 然后形成等离子体以将沟槽填充材料沉积在衬底的表面上并填充沟槽。 通过在沉积之前在腔室中建立大体上稳定的状态条件，减少了瞬态效应，并且获得了更均匀的填充材料的沉积。 形成等离子体的步骤通常包括以至少约15瓦/ cm 2的总功率密度将源等离子体能量耦合到处理室中。