专利检索 ap:("APPLIED MATERIALS INC") AND inv:"GEE PAUL" 第 1 页

1.

发明公开
CHEMICAL VAPOR DEPOSITION OF HIGH QUALITY FLOW-LIKE SILICON DIOXIDE USING A SILICON CONTAINING PRECURSOR AND ATOMIC OXYGEN 审中-公开
标题翻译：在含硅前体和原子氧河LIKEHOCHQUALITÄTSSILICIUMDIOXID化学气相沉积

公开(公告)号：EP2024532A4

公开(公告)日：2014-08-06

申请号：EP07797890

申请日：2007-05-30

申请人： APPLIED MATERIALS INC

发明人： INGLE NITIN K , YUAN ZHENG , GEE PAUL , SAPRE KEDAR

IPC分类号： C23C16/40 , C23C16/452 , C23C16/56 , H01L21/02 , H01L21/3105 , H01L21/316

CPC分类号： H01L21/3105 , C23C16/402 , C23C16/452 , C23C16/56 , H01L21/02126 , H01L21/02164 , H01L21/02216 , H01L21/02274 , H01L21/02315 , H01L21/02337 , H01L21/31633