公开(公告)号：EP1872397A4

公开(公告)日：2009-05-06

申请号：EP06749072

申请日：2006-03-30

申请人： APPLIED MATERIALS INC

发明人： JENNINGS DEAN ,  LANG HAIFAN ,  YAM MARK ,  PARIHAR VIJAY ,  MAYUR ABHILASH ,  HUNTERN AARON ,  ADAMS BRUCE ,  RANISH JOSEPH MICHAEL

IPC分类号： H01L21/428 ,  B23K26/00 ,  B23K26/06 ,  B23K26/073

CPC分类号： B23K26/0608 ,  B23K26/0066 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/073 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/324

摘要： A thermal processing apparatus and method in which a first laser source, for example, a CO 2 emitting at 10.6 mum is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO 2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.