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公开(公告)号：EP2115372A4
公开(公告)日：2011-04-27
申请号：EP08729823
申请日：2008-02-14
摘要： A lamp assembly for the lamp assembly adapted for use in a substrate thermal processing chamber to heat the substrate to temperatures up to at least about 1100° C. is disclosed. In one embodiment, the lamp assembly comprises a bulb enclosing at least one radiation generating filament attached to a pair of leads, the bulb having an inner surface and an outer surface, a lamp base configured to receive the pair of leads and at least a portion of the bulb having a surface treatment adapted to reflect light away from the lamp base. In another embodiment, a sleeve covers the lamp base, which has a cross-sectional area less than about 1.2 times the cross-sectional area of the bulb.
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公开(公告)号：EP1872397A4
公开(公告)日：2009-05-06
申请号：EP06749072
申请日：2006-03-30
发明人： JENNINGS DEAN , LANG HAIFAN , YAM MARK , PARIHAR VIJAY , MAYUR ABHILASH , HUNTERN AARON , ADAMS BRUCE , RANISH JOSEPH MICHAEL
IPC分类号： H01L21/428 , B23K26/00 , B23K26/06 , B23K26/073
CPC分类号： B23K26/0608 , B23K26/0066 , B23K26/0604 , B23K26/0613 , B23K26/073 , B23K26/0732 , B23K26/0736 , B23K26/0738 , H01L21/2026 , H01L21/268 , H01L21/324
摘要： A thermal processing apparatus and method in which a first laser source, for example, a CO 2 emitting at 10.6 mum is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO 2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.
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