专利检索 ap:("ASM America, Inc.") AND inv:"FUKUDA, Hideaki, Tsuduki-ku" 第 1 页

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发明公开
PLASMA PRE-TREATING SURFACES FOR ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：表面备案AN的原子层的等离子体处理

公开(公告)号：EP1851794A1

公开(公告)日：2007-11-07

申请号：EP06735499.3

申请日：2006-02-21

申请人： ASM America, Inc.

发明人： SPREY, Hessel , FUKUDA, Hideaki, Tsuduki-ku , KEMELING, Nathanael R.C. , GOUNDAR, Kamal Kishore , KUMAR, Davendra , STOKHOF, Maarten

IPC分类号： H01L21/768 , H01L21/285

CPC分类号： H01L21/02063 , C23C14/02 , C23C16/02 , C23C16/36 , C23C16/45525 , C23C16/45531 , H01L21/28562 , H01L21/3105 , H01L21/76807 , H01L21/7681 , H01L21/76826 , H01L21/76831 , H01L21/76843 , H01L21/76846 , H01L21/76873

摘要： Method and structures are provided for conformal lining of dual damascene structures in integrated circuits. Preferred embodiments are directed to providing conformal lining over openings formed in porous materials. Trenches are formed (100) in insulating layers. The layers are then adequately treated with a particular plasma process (101). Following this plasma treatment a self-limiting, self-saturating atomic layer deposition (ALD) reaction (115) can occur without significantly filling the pores forming improved interconnects.