公开(公告)号：EP1104012B1

公开(公告)日：2008-12-31

申请号：EP00204178.8

申请日：2000-11-23

申请人： ASM INTERNATIONAL N.V.

发明人： Vermeulen, Willem Job Cornelis ,  Philippsen, Bengt ,  Wierts, Erik ,  Beulens, Jacobus Johannes ,  Oosterlaken, Theodorus Gerardus Maria

IPC分类号： H01L21/316 ,  H01L21/00

CPC分类号： H01L21/67109 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662

公开(公告)号：EP1345254A3

公开(公告)日：2006-03-15

申请号：EP03251584.3

申请日：2003-03-14

申请人： ASM INTERNATIONAL N.V.

发明人： De Ridder, Christianus Gerardus Maria ,  Oosterlaken, Theodorus Gerardus Maria ,  Huusen, Frank

IPC分类号： H01L21/00

CPC分类号： H01L21/67126 ,  H01L21/67098 ,  H01L21/67109

摘要： A support sleeve 100 for supporting a high temperature process tube comprises one or more circumferential channels 120, 126, 124, and 122, each channel connected to either a feed for gas or a vacuum exhaust. One circumferential channel 120 opens to the top surface 108 of the sleeve 100, on which the process tube is supported to provide a gas/vacuum seal between the process tube and support sleeve 100. Another circumferential channel 124 is connected to a gas feed 114 and provided with gas injection holes 134, evenly distributed along the inner surface 106 of the support sleeve 100 to provide a cylindrically symmetrical injection of process gas into the process tube. Another circumferential channel 126 is connected to an exhaust 116 for gas and provided with gas exhaust holes 132, evenly distributed along the circumference of the support sleeve 100, to provide a cylindrically symmetric exhaust of process gases from the process tube.

公开(公告)号：EP1345254B1

公开(公告)日：2014-07-30

申请号：EP03251584.3

申请日：2003-03-14

申请人： ASM INTERNATIONAL N.V.

发明人： De Ridder, Christianus Gerardus Maria ,  Oosterlaken, Theodorus Gerardus Maria ,  Huusen, Frank

IPC分类号： H01L21/67

CPC分类号： H01L21/67126 ,  H01L21/67098 ,  H01L21/67109

公开(公告)号：EP1345254A2

公开(公告)日：2003-09-17

申请号：EP03251584.3

申请日：2003-03-14

申请人： ASM INTERNATIONAL N.V.

发明人： De Ridder, Christianus Gerardus Maria ,  Oosterlaken, Theodorus Gerardus Maria ,  Huusen, Frank

IPC分类号： H01L21/00

CPC分类号： H01L21/67126 ,  H01L21/67098 ,  H01L21/67109

摘要： A support sleeve 100 for supporting a high temperature process tube comprises one or more circumferential channels 120, 126, 124, and 122, each channel connected to either a feed for gas or a vacuum exhaust. One circumferential channel 120 opens to the top surface 108 of the sleeve 100, on which the process tube is supported to provide a gas/vacuum seal between the process tube and support sleeve 100. Another circumferential channel 124 is connected to a gas feed 114 and provided with gas injection holes 134, evenly distributed along the inner surface 106 of the support sleeve 100 to provide a cylindrically symmetrical injection of process gas into the process tube. Another circumferential channel 126 is connected to an exhaust 116 for gas and provided with gas exhaust holes 132, evenly distributed along the circumference of the support sleeve 100, to provide a cylindrically symmetric exhaust of process gases from the process tube.

摘要翻译： 用于支撑高温处理管的支撑套筒100包括一个或多个圆周通道120,126,124和122，每个通道连接到用于气体或真空排气的进料。 一个圆周通道120通向套管100的顶部表面108，工作管被支撑在该顶部表面108上，以在处理管和支撑套管100之间提供气体/真空密封。另一圆周通道124连接到气体进料口114和 设置有沿着支撑套筒100的内表面106均匀分布的气体注入孔134，以将处理气体的圆柱对称注入到工艺管中。 另一个周向通道126连接到用于气体的排气口116并且设置有沿着支撑套筒100的圆周均匀分布的排气孔132，以提供来自工艺管的工艺气体的圆柱形对称排气。

公开(公告)号：EP1345255B1

公开(公告)日：2014-04-23

申请号：EP03251586.8

申请日：2003-03-14

申请人： ASM INTERNATIONAL N.V.

发明人： Oosterlaken, Theodorus Gerardus Maria ,  Huussen, Frank ,  Landsmeer, Timothy Robert ,  Terhorst, Herbert

IPC分类号： H01L21/67 ,  C23C16/458

CPC分类号： H01L21/67103

公开(公告)号：EP1345255A3

公开(公告)日：2005-09-07

申请号：EP03251586.8

申请日：2003-03-14

申请人： ASM INTERNATIONAL N.V.

发明人： Oosterlaken, Theodorus Gerardus Maria ,  Huussen, Frank ,  Landsmeer, Timothy Robert ,  Terhorst, Herbert

IPC分类号： H01L21/00 ,  C23C16/458

CPC分类号： H01L21/67103

摘要： A pedestal (100) for use in a high temperature vertical fumace for the processing of semiconductor wafers provides a closure and heat insulation for the lower end of the furnace and is a wafer boat support. The pedestal (100), comprising quartz-enveloped insulation material (130, 132), supports a wafer boat at a boat support level (113) and is provided with an upper section (102) disposed above the boat support level (113). The upper section (102) comprises enveloped insulating maferial (130). The envelope of the upper section (102) is also formed of quartz and the insulating material (130) in the upper section (102) has a lower thermal conductance than the insulating material (132) in a lower quartz enveloped section (104).

公开(公告)号：EP1345255A2

公开(公告)日：2003-09-17

申请号：EP03251586.8

申请日：2003-03-14

申请人： ASM INTERNATIONAL N.V.

发明人： Oosterlaken, Theodorus Gerardus Maria ,  Huussen, Frank ,  Landsmeer, Timothy Robert ,  Terhorst, Herbert

IPC分类号： H01L21/00

CPC分类号： H01L21/67103

摘要： A pedestal (100) for use in a high temperature vertical fumace for the processing of semiconductor wafers provides a closure and heat insulation for the lower end of the furnace and is a wafer boat support. The pedestal (100), comprising quartz-enveloped insulation material (130, 132), supports a wafer boat at a boat support level (113) and is provided with an upper section (102) disposed above the boat support level (113). The upper section (102) comprises enveloped insulating maferial (130). The envelope of the upper section (102) is also formed of quartz and the insulating material (130) in the upper section (102) has a lower thermal conductance than the insulating material (132) in a lower quartz enveloped section (104).

摘要翻译： 用于加工半导体晶片的高温垂直炉中的基座（100）为炉的下端提供封闭和隔热，并且是晶片舟支架。 包括石英包封的绝缘材料（130,132）的基座（100）在舟状支撑水平（113）处支撑晶片舟皿，并且设置有设置在船支撑水平面（113）上方的上部（102）。 上部（102）包括包封的绝缘（130）。 上部（102）的外壳也由石英形成，并且上部（102）中的绝缘材料（130）具有比下部石英包封部分（104）中的绝缘材料（132）更低的导热性。

公开(公告)号：EP1104012A1

公开(公告)日：2001-05-30

申请号：EP00204178.8

申请日：2000-11-23

申请人： ASM INTERNATIONAL N.V.

发明人： Vermeulen, Willem Job Cornelis ,  Philippsen, Bengt ,  Wierts, Erik ,  Beulens, Jacobus Johannes ,  Oosterlaken, Theodorus Gerardus Maria

IPC分类号： H01L21/316 ,  H01L21/00

CPC分类号： H01L21/67109 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662

摘要： A method for forming, by means of water vapor, an oxidation layer on a number of wafers manufactured from semiconducting material, wherein a number of wafers are disposed one above the other and introduced into a vertical process chamber in which a substantially atmospheric pressure prevails and in which the wafers are brought to an increased temperature and maintained at that temperature, wherein for forming the water vapor, a first gas, containing hydrogen, is mixed with a second gas, containing oxygen, the concentration of hydrogen in the first gas and/or the concentration of oxygen in the second gas and/or the ratio of the flow rates of the first and the second gas being such that during mixing of the first and the second gas, explosion of the third gas mixture formed therefrom is impossible. The invention also relates to a wafer processing furnace suitable and intended for performing the above-described method.

摘要翻译： 一种通过水蒸气形成由半导体材料制造的多个晶片上的氧化层的方法，其中多个晶片被一个放置在另一个之上并被引入垂直的处理室中，其中基本上为大气压力占优势， 其中晶片被升温并保持在该温度，其中为了形成水蒸气，含有氢的第一气体与含有氧的第二气体混合，第一气体中的氢浓度和/ 或第二气体中的氧气浓度和/或第一和第二气体的流量比例使得在第一和第二气体的混合期间，由此形成的第三气体混合物的爆炸是不可能的。 本发明还涉及一种适合于并用于执行上述方法的晶片加工炉。