Susceptor with surface roughness for high temperature substrate processing
    1.
    发明公开
    Susceptor with surface roughness for high temperature substrate processing 审中-公开
    用表面粗糙度为高温处理衬底的拾取装置

    公开(公告)号:EP1638135A3

    公开(公告)日:2008-03-19

    申请号:EP05019177.4

    申请日:2005-09-03

    IPC分类号: H01L21/00

    摘要: Susceptors plates are formed having a minimum surface roughness. The wafer contact surfaces of the susceptor plates have a surface roughness Ra value of about 0.6 µm or more. The contact surface is otherwise flat and lacking in large protrusions. In addition, the susceptors have a low transparency to more closely match the heat absorption properties of the supported wafer. Advantageously, heat transfer from the susceptors to the wafers is highly uniform. Thus, using these susceptors to support the wafers during high temperature semiconductor processing ( e.g. , at > 1000°C) results in no or few crystallographic slip lines being formed on the wafers.

    Susceptor with surface roughness for high temperature substrate processing
    2.
    发明公开
    Susceptor with surface roughness for high temperature substrate processing 审中-公开
    Aufnahmevorrichtung mitOberflächenrauhigkeitzur Hochtemperaturbehandlung von Substraten

    公开(公告)号:EP1638135A2

    公开(公告)日:2006-03-22

    申请号:EP05019177.4

    申请日:2005-09-03

    IPC分类号: H01L21/00

    摘要: Susceptors plates are formed having a minimum surface roughness. The wafer contact surfaces of the susceptor plates have a surface roughness Ra value of about 0.6 µm or more. The contact surface is otherwise flat and lacking in large protrusions. In addition, the susceptors have a low transparency to more closely match the heat absorption properties of the supported wafer. Advantageously, heat transfer from the susceptors to the wafers is highly uniform. Thus, using these susceptors to support the wafers during high temperature semiconductor processing ( e.g. , at > 1000°C) results in no or few crystallographic slip lines being formed on the wafers.

    摘要翻译: 形成具有最小表面粗糙度的感受器板。 基座板的晶片接触面的表面粗糙度Ra值为约0.6μm以上。 接触表面是平坦的,并且没有大的突起。 此外,感受体具有低透明度以更紧密地匹配被支撑晶片的吸热性能。 有利地,从基座到晶片的热传递是高度均匀的。 因此,在高温半导体处理(例如,> 1000℃)下使用这些基座来支撑晶片导致晶片上没有形成或几乎没有形成晶体学滑移线。