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公开(公告)号:EP4425259A1
公开(公告)日:2024-09-04
申请号:EP23159066.2
申请日:2023-02-28
IPC分类号: G03F7/00 , H01L21/683 , H01L21/687
CPC分类号: G03F7/70708 , G03F7/7095
摘要: The invention provides a method of manufacturing an electrostatic object clamp for a semiconductor processing apparatus, the method comprising the steps of:
- providing an electrode with a dielectric substrate,
- depositing a coating on a top surface of the dielectric substrate by alternatingly depositing:
- one or more electrically conductive base layers, and
- one or more electrically conductive protective layers, and
- laser ablating the coating to form one or more recesses in the coating to obtain a three-dimensional coating structure, and
- removing all areas of the one or more protective layers that are exposed after the step of laser ablating.