公开(公告)号：EP0659782A1

公开(公告)日：1995-06-28

申请号：EP94309000.1

申请日：1994-12-05

申请人： AT&T Corp.

发明人： Kwock, Elizabeth Wangyi ,  Miller, Timothy Mark

IPC分类号： C08F238/00 ,  G03F7/025 ,  H01L23/538

CPC分类号： C08F238/00 ,  G03F7/025 ,  H01L23/49894 ,  H01L2924/0002 ,  H01L2924/00

摘要： Applicants have discovered an improved photodefined dielectric materials comprising poly(aromatic diacetylenes). The preferred poly(aromatic diacetylenes) are copolymers of aromatic diacetylenes. Specific examples are 1) a copolymer of 4,4'-diethynyldiphenyl ether and m -diethynyl benzene and 2) a copolymer of 4,4'-diethynyldiphenyl ether and 4,4'-bis(3-ethynylphenoxy)-2,2',3,3',5,5',6,6'-octafluorobiphenyl. These copolymers can be photochemically crosslinked in patterns with exposure of 30 mJ/cm²µm and 60 mJ/cm²µm, respectively, and patterns have been produced in 10 µm thick films with features as small as 12 µm.

摘要翻译： 申请人已经发现包含聚（芳族二乙炔）的改进的光限定介电材料。 优选的聚（芳族二乙炔）是芳族二乙炔的共聚物。 具体实例为1）4,4'-二乙炔基二苯基醚和间二乙炔基苯的共聚物和2）4,4'-二乙炔基二苯基醚和4,4'-双（3-乙炔基苯氧基）-2,2' ，3,3' ，5,5' ，6,6'-八氟联苯。 这些共聚物可以在曝光量分别为30mJ /cm²μm和60mJ /cm²μm的条件下进行光化学交联，并且在具有小至12μm的特征的10μm厚的膜中已经产生了图案。