公开(公告)号：EP1416522A8

公开(公告)日：2004-08-04

申请号：EP02745896.7

申请日：2002-07-10

申请人： Advanced LCD Technologies Development Center Co., Ltd.

发明人： MATSUMURA, M.; c/o Advanced LCD Technologies ,  OANA, Y.; c/o Advanced LCD Technologies ,  ABE, H.; c/o Advanced LCD Technologies ,  YAMAMOTO, Y.; c/o Advanced LCD Technologies ,  KOSEKI, H.; c/o Advanced LCD Technologies ,  WARABISAKO, M.; c/o Advanced LCD Technologies

IPC分类号： H01L21/20 ,  H01L29/786

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/2026 ,  H01L21/67373 ,  H01L21/67379 ,  H01L21/67772 ,  H01L21/67775 ,  H01L27/1218 ,  H01L27/1274 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/66772 ,  H01L29/78654 ,  H01L29/78675

摘要： In the present invention, the substrate sheet for the thin film semiconductor device is produced as a substrate sheet having a thin film layer of semiconductor in which large size single-crystalline grains having a grain size exceeding 2µm are arranged in a regulated configuration mode, by irradiating a thin film layer of non-single-crystalline semiconductor formed on a base layer of insulation material, with energy beam having intensity distribution of irradiation such that the area to which maximum intensity value of energy beam is given and the area to which minimum intensity value of energy beam is given are arranged in a regulated mode. The each electric circuit unit of thin film semiconductor device is formed by adjusting its position so as to correspond to the position of the single-crystalline grain in the layer of semiconductor of the substrate sheet. By the above process, a thin film semiconductor device, in which a plurality of electric circuit unit having gate electrode, source electrode and drain electrode are arranged in a regulated configuration mode corresponding to the arrangement of single-crystalline grains of semiconductor, is obtained. The device can operate with high mobility without being influenced such phenomenon as by electron dispersion at the boundary of grains.

摘要翻译： 在本发明中，用于薄膜半导体器件的基片是作为具有半导体薄膜层的基片，其中晶粒尺寸超过2μm的大尺寸单晶晶粒以调节配置模式排列， 用形成在绝缘材料基底层上的非单晶半导体薄膜层照射具有照射强度分布的能量束，使得给出能量束的最大强度值的面积和最小强度的面积 给出的能量束的值以调节模式排列。 薄膜半导体器件的每个电路单元是通过调整其位置来形成的，以便与基片的半导体层中的单晶颗粒的位置相对应。 通过上述过程，获得了一种薄膜半导体器件，其中具有栅电极，源电极和漏电极的多个电路单元以对应于半导体的单晶晶粒排列的调节配置模式排列。 该器件可以在高迁移率下工作，而不受粒子边界处电子扩散等现象的影响。