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    COLOUR FILM SUBSTRATE, DISPLAY DEVICE AND DETECTION METHOD THEREFOR
    1.
    发明公开
    COLOUR FILM SUBSTRATE, DISPLAY DEVICE AND DETECTION METHOD THEREFOR 审中-公开
    彩色胶片衬底，显示装置及其检测方法

    公开(公告)号：EP3242156A1

    公开(公告)日：2017-11-08

    申请号：EP15832874.0

    申请日：2015-08-14

    申请人： BOE Technology Group Co., Ltd. ,  Beijing BOE Optoelectronics Technology Co., Ltd.

    发明人： LI, Tiansheng ,  XIE, Zhenyu

    IPC分类号： G02F1/1335 ,  G09G3/00

    CPC分类号： H01L27/1244 ,  G02B5/201 ,  G02F1/1335 ,  G02F1/133514 ,  G02F1/13454 ,  G02F2001/136254 ,  G09G3/00 ,  G09G2330/10 ,  H01L27/1296

    摘要： The present invention provides a color filter substrate, a display device and a detection method thereof, aims to solve the problems of difficulty in failure positioning and low detection efficiency in existing display panels. The color filter substrate comprises a plurality of sub-pixels arranged in an array, each of the sub-pixels is provided with a color filter, and at least a part of columns of sub-pixels are marked column of sub-pixels. The shapes of the color filters of a part of sub-pixels of the marked column of sub-pixels are different from those of the remaining sub-pixels. The display device comprises the above-mentioned color filter substrate. The color filter substrate can be used in the display device, particularly suitable for the display device which adopts double side GOA circuits.

    摘要翻译： 本发明提供了一种彩膜基板，显示装置及其检测方法，旨在解决现有显示面板难以定位故障，检测效率低的问题。 彩色滤光片基板包括排列成阵列的多个子像素，每个子像素设置有彩色滤光片，至少一部分子像素列为子像素的标记列。 被标记的列的子像素的一部分子像素的滤色器的形状不同于其余的子像素的形状。 显示装置包括上述滤色器基板。 彩色滤光片基板可以用于显示装置中，特别适用于采用双面GOA电路的显示装置。

    Array substrate and method of fabricating the same
    2.
    发明公开
    Array substrate and method of fabricating the same 审中-公开
    阵列基板及其制造方法

    公开(公告)号：EP2741332A3

    公开(公告)日：2017-09-20

    申请号：EP13173321.4

    申请日：2013-06-24

    申请人： LG Display Co., Ltd.

    发明人： Yang, Joon-Young

    IPC分类号： H01L29/417 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L29/45

    CPC分类号： H01L29/41733 ,  H01L21/44 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1288 ,  H01L27/1296 ,  H01L29/41775 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78636 ,  H01L29/7869 ,  H01L33/0041

    摘要： An array substrate includes an oxide semiconductor layer; an etch stopper including a first contact hole exposing each of both sides of the oxide semiconductor layer; source and drain electrodes spaced apart from each other with the oxide semiconductor layer therebetween; a first passivation layer including a contact hole exposing each of both ends of the oxide semiconductor layer and each of ends of the source and drain electrode that oppose the both ends of the oxide semiconductor layer, respectively; and a connection pattern at the second contact hole contacting both the oxide semiconductor layer and each of the source and drain electrodes.

    摘要翻译： 阵列基板包括氧化物半导体层; 蚀刻停止层，其包括暴露氧化物半导体层的两侧中的每一侧的第一接触孔; 源电极和漏电极，其间具有氧化物半导体层; 第一钝化层，所述第一钝化层包括分别暴露所述氧化物半导体层的两端和分别与所述氧化物半导体层的两端相对的所述源电极和漏电极的每个端部的接触孔; 以及在所述第二接触孔处与所述氧化物半导体层和所述源极和漏极中的每一个接触的连接图案。

    ACTIVE MATRIX SUBSTRATE AND DRIVE CIRCUIT THEREOF
    7.
    发明公开
    ACTIVE MATRIX SUBSTRATE AND DRIVE CIRCUIT THEREOF 有权
    AKTIVMATRIXSUBSTRAT UND ANSTEUERSCHALTUNG DAVON

    公开(公告)号：EP1780583A1

    公开(公告)日：2007-05-02

    申请号：EP05765060.8

    申请日：2005-06-24

    申请人： SHARP KABUSHIKI KAISHA

    发明人： YAMADA, Takaharu

    IPC分类号： G02F1/133 ,  G02F1/1368 ,  G09F9/30 ,  G09G3/20 ,  G09G3/36

    CPC分类号： G02F1/136213 ,  G02F2001/13606 ,  G09G3/3655 ,  G09G3/3677 ,  G09G2320/0223 ,  H01L27/1296

    摘要： There is provided an active matrix substrate used in a display device or the like capable of making substantially uniform the level shift generated in the pixel potential caused by the distribution of resistance and capacity in each signal line. On the TFT substrate which is an active matrix substrate having a common electrode line formed parallel to the scan signal line, in order to eliminate non-uniformity of the level shift of the pixel potential generated at the scan signal fall, each pixel circuit is formed so that the capacity Cdg between the scan signal line and the pixel electrode becomes greater as electrically going farther from the scan signal line drive circuit and going farther from the common electrode line drive circuit. The present invention can be applied especially to an active matrix substrate used in a liquid crystal display device, an EL display device, and the like.

    摘要翻译： 提供了用于显示装置等中的有源矩阵基板，其能够使由每个信号线中的电阻和容量的分布引起的像素电位中产生的电平偏移基本上均匀。 在具有与扫描信号线平行的公共电极线的有源矩阵基板的TFT基板上，为了消除在扫描信号下降产生的像素电位的电平偏移的不均匀性，形成每个像素电路 使得扫描信号线和像素电极之间的电容Cdg随着与扫描信号线驱动电路的距离越来越大而越来越远离公共电极线驱动电路。 本发明可以特别适用于液晶显示装置，EL显示装置等中使用的有源矩阵基板。

    THIN-FILM SEMICONDUCTOR DEVICE AND ITS PRODUCTION METHOD
    8.
    发明公开
    THIN-FILM SEMICONDUCTOR DEVICE AND ITS PRODUCTION METHOD 审中-公开
    薄膜半导体器件及其制造方法

    公开(公告)号：EP1416522A8

    公开(公告)日：2004-08-04

    申请号：EP02745896.7

    申请日：2002-07-10

    申请人： Advanced LCD Technologies Development Center Co., Ltd.

    发明人： MATSUMURA, M.; c/o Advanced LCD Technologies ,  OANA, Y.; c/o Advanced LCD Technologies ,  ABE, H.; c/o Advanced LCD Technologies ,  YAMAMOTO, Y.; c/o Advanced LCD Technologies ,  KOSEKI, H.; c/o Advanced LCD Technologies ,  WARABISAKO, M.; c/o Advanced LCD Technologies

    IPC分类号： H01L21/20 ,  H01L29/786

    CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/2026 ,  H01L21/67373 ,  H01L21/67379 ,  H01L21/67772 ,  H01L21/67775 ,  H01L27/1218 ,  H01L27/1274 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/66772 ,  H01L29/78654 ,  H01L29/78675

    摘要： In the present invention, the substrate sheet for the thin film semiconductor device is produced as a substrate sheet having a thin film layer of semiconductor in which large size single-crystalline grains having a grain size exceeding 2µm are arranged in a regulated configuration mode, by irradiating a thin film layer of non-single-crystalline semiconductor formed on a base layer of insulation material, with energy beam having intensity distribution of irradiation such that the area to which maximum intensity value of energy beam is given and the area to which minimum intensity value of energy beam is given are arranged in a regulated mode. The each electric circuit unit of thin film semiconductor device is formed by adjusting its position so as to correspond to the position of the single-crystalline grain in the layer of semiconductor of the substrate sheet. By the above process, a thin film semiconductor device, in which a plurality of electric circuit unit having gate electrode, source electrode and drain electrode are arranged in a regulated configuration mode corresponding to the arrangement of single-crystalline grains of semiconductor, is obtained. The device can operate with high mobility without being influenced such phenomenon as by electron dispersion at the boundary of grains.

    摘要翻译： 在本发明中，用于薄膜半导体器件的基片是作为具有半导体薄膜层的基片，其中晶粒尺寸超过2μm的大尺寸单晶晶粒以调节配置模式排列， 用形成在绝缘材料基底层上的非单晶半导体薄膜层照射具有照射强度分布的能量束，使得给出能量束的最大强度值的面积和最小强度的面积 给出的能量束的值以调节模式排列。 薄膜半导体器件的每个电路单元是通过调整其位置来形成的，以便与基片的半导体层中的单晶颗粒的位置相对应。 通过上述过程，获得了一种薄膜半导体器件，其中具有栅电极，源电极和漏电极的多个电路单元以对应于半导体的单晶晶粒排列的调节配置模式排列。 该器件可以在高迁移率下工作，而不受粒子边界处电子扩散等现象的影响。

    TFT with large-grain polycrystalline active layer
    10.
    发明公开
    TFT with large-grain polycrystalline active layer 审中-公开
    具有多晶大结晶的活性层的TFT

    公开(公告)号：EP1020899A3

    公开(公告)日：2001-02-21

    申请号：EP00100159.3

    申请日：2000-01-11

    申请人： Hitachi, Ltd.

    发明人： Suzuki, Kenkichi ,  Nagata, Tetsuya ,  Takahashi, Michiko ,  Saito, Masakazu ,  Ogino, Toshio ,  Miyao, Masanobu

    IPC分类号： H01L21/20 ,  H01L21/336

    CPC分类号： H01L21/02672 ,  G02F1/13454 ,  H01L21/02675 ,  H01L21/02691 ,  H01L21/2022 ,  H01L21/2026 ,  H01L27/1277 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

    摘要： A semiconductor device has a thin film transistor including an insulating substrate (3, 8), an island (1) made of a polycrystalline semiconductor material and disposed on the insulating substrate, a conductive layer (2) made of the polycrystalline semiconductor material and at least one of metals and metallic silicides and surrounding the island, a source region (6) and a drain region (7) spaced from the source region, the source region and the drain region being formed in said island, a gate electrode (4) disposed on the island with an insulating film interposed between the island and the gate electrode, the gate facing a spacing between the source region and the drain region. The polycrystalline semiconductor material forming the island and the conductive layer are fabricated by initially annealing a first amorphous semiconductor material (11) deposited on the insulating substrate with a crystallization-inducing layer (14) made of the at least one of metals and metallic silicides and having a hole (15) corresponding to the island, the crystallization-inducing layer being disposed on a surface of the amorphous semiconductor material on at least one of a substrate side thereof and a side thereof opposite from the substrate side, and then by depositing a second amorphous semiconductor material (18) on the first amorphous semiconductor and annealing the second amorphous semiconductor material.