公开(公告)号：EP1334222A1

公开(公告)日：2003-08-13

申请号：EP01993719.2

申请日：2001-10-18

申请人： Aixtron AG

发明人： KÄPPELER, Johannes ,  WISCHMEYER, Frank ,  BERGE, Runec/o Epigress AB

IPC分类号： C30B25/08 ,  C30B25/10

CPC分类号： C23C16/46 ,  C23C16/44 ,  C30B25/08 ,  C30B25/10 ,  Y10T117/10

摘要： The invention relates to a device for depositing especially crystalline layers on especially crystalline substrates by means of reaction gases fed to a heated process chamber (14). Said process chamber (14) is formed by the cavity of an especially multi-part graphite tube (1) arranged in a reactor housing that especially comprises quartz walls. Said reactor housing, in the area of the process chamber (14), is enclosed by a high-frequency coil (13) and the space between the reactor housing wall (6) and the graphite tube (1) is filled with a graphite foam sleeve (5). In order to improve heat insulation, the graphite foam sleeve (5) is fully slit. The slot (7) is wider than the maximum thermal elongation of the graphite foam sleeve (5) in the peripheral direction to be expected when the device is heated up to process temperature.