公开(公告)号：EP3670709B1

公开(公告)日：2024-08-28

申请号：EP19216766.6

申请日：2019-12-17

IPC分类号： C30B25/10 ,  C30B25/18 ,  C30B29/52 ,  H01L21/02 ,  H01L21/311

CPC分类号： C30B29/52 ,  C30B25/10 ,  C30B25/183 ,  C30B25/186 ,  H01L21/02046 ,  H01L21/31116 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/02236 ,  H01L21/02054

公开(公告)号：EP2446069B1

公开(公告)日：2018-08-08

申请号：EP10724883.3

申请日：2010-06-25

申请人： Element Six Technologies Limited

发明人： KHAN, Rizwan Uddin Ahmad ,  GEOGHEGAN, Sarah Louise ,  TWITCHEN , Dianel James ,  PERKINS , Neil

IPC分类号： C30B29/04 ,  C30B33/02 ,  C30B31/20

CPC分类号： C30B29/04 ,  C30B25/02 ,  C30B25/10 ,  C30B31/20 ,  C30B33/02

摘要： A method of making fancy pale blue or fancy pale blue/green CVD diamond material is described. The method comprises irradiating single crystal diamond material that has been grown by a CVD process with electrons to introduce isolated vacancies into the diamond material, the irradiated diamond material having (or after a further post- irradiation treatment having) a total vacancy concentration [VT] and a path length L such that [VT] x L is at least 0.072 ppm cm and at most 0.36 ppm cm, and the diamond material becomes fancy pale blue or fancy pale blue/green in colour. Fancy pale blue diamonds are also described.

公开(公告)号：EP3323538A4

公开(公告)日：2018-06-27

申请号：EP15882290

申请日：2015-07-13

申请人： SUMITOMO ELECTRIC HARDMETAL CORP

发明人： PASEUTH ANONGSACK ,  KANAOKA HIDEAKI ,  DETANI TAKANORI ,  IMAMURA SHINYA

IPC分类号： C23C28/04 ,  C23C16/40 ,  C23C16/56

CPC分类号： B23B27/148 ,  B23B2224/04 ,  B23B2224/32 ,  B23B2228/04 ,  B23B2228/105 ,  C23C16/36 ,  C23C16/403 ,  C23C16/56 ,  C23C28/042 ,  C30B25/10 ,  C30B25/14 ,  C30B29/20 ,  C30B33/02

摘要： A surface-coated cutting tool according to the present invention is provided with a base material and a coating formed on the base material, the coating includes an ±-Al 2 O 3 layer, the ±-Al 2 O 3 layer includes a plurality of crystal grains of ±-Al 2 O 3 and shows (001) orientation, a grain boundary of the crystal grains contains a CSL grain boundary and a general grain boundary, and a length of a ˆ‘3 crystal grain boundary out of the CSL grain boundary exceeds 80% of a length of a ˆ‘3-29 crystal grain boundary and is equal to or more than 10% and equal to or less than 50% of the total length of all grain boundaries which is the sum of the length of the ˆ‘3-29 crystal grain boundary and a length of the general grain boundary.

公开(公告)号：EP2815421B1

公开(公告)日：2018-01-31

申请号：EP13712741.1

申请日：2013-03-21

申请人： Freiberger Compound Materials GmbH

发明人： LIPSKI, Frank ,  SCHOLZ, Ferdinand ,  KLEIN, Martin ,  HABEL, Frank

IPC分类号： C30B29/40 ,  H01L21/02 ,  C30B25/10 ,  C30B25/16 ,  C30B25/18

CPC分类号： C30B25/16 ,  C30B25/04 ,  C30B25/10 ,  C30B25/18 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02436 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  Y10T428/24851

公开(公告)号：EP3263748A2

公开(公告)日：2018-01-03

申请号：EP17170300.2

申请日：2017-05-09

申请人： Epiluvac AB

发明人： Spengler, Richard ,  Nilsson, Roger ,  Rosberg, Jonas

IPC分类号： C30B25/10 ,  C23C16/46 ,  C23C16/54 ,  C23C16/458 ,  F27B9/06 ,  F27B9/36 ,  F27D11/02 ,  F27D11/06 ,  H01L21/67

CPC分类号： C23C16/46 ,  C23C16/4585 ,  C23C16/545 ,  C30B25/08 ,  C30B25/10 ,  F27B9/063 ,  F27B9/067 ,  F27B9/36 ,  F27D11/02 ,  F27D11/06 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67248 ,  Y02P10/253

摘要： A device, system and method for depositing crystalline layers on at least one crystalline substrate is described. The disclosure includes the use of a multi zone heater, the multi zone heater is disposed between a reactor housing and a process chamber. The multi zone heater has different electrical properties along its length, whereby the multi zone heater when heated by eddy currents induced by an RF field generated by a RF heating coil provides a temperature profile inside the multi zone heater that varies along the length of the multi zone heater for heating the process chamber.

摘要翻译： 描述了用于在至少一个晶体衬底上沉积晶体层的装置，系统和方法。 本公开包括使用多区域加热器，多区域加热器设置在反应器壳体和处理室之间。 多区域加热器沿其长度具有不同的电特性，由此多区域加热器在被RF加热线圈产生的RF场感应的涡流加热时提供多区域加热器内的温度分布，其沿着多分区加热器的长度 用于加热处理室的区域加热器。

公开(公告)号：EP3112504A4

公开(公告)日：2018-01-03

申请号：EP15755325

申请日：2015-02-27

申请人： NIPPON STEEL & SUMITOMO METAL CORP

发明人： AIGO TAKASHI ,  ITO WATARU ,  FUJIMOTO TATSUO

IPC分类号： C30B29/36 ,  C30B25/02

CPC分类号： C30B25/20 ,  C23C16/325 ,  C23C16/44 ,  C30B25/08 ,  C30B25/10 ,  C30B25/165 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02428 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/02661

摘要： The present invention provides a method for producing an epitaxial silicon carbide wafer comprising epitaxially growing SiC on an SiC substrate to produce an epitaxial SiC wafer during which further reducing stacking faults and comet defects than the conventional technologies to obtain an epitaxial SiC wafer having a high quality epitaxial film. The method for producing the epitaxial silicon carbide wafer is characterized in that a pre-growth atmosphere gas flowing into the growth furnace before the start of epitaxial growth contains hydrogen gas and has a balance of an inert gas and unavoidable impurities, and the hydrogen gas is contained in 0.1 to 10.0 vol% with respect to the inert gas.

公开(公告)号：EP3223301A1

公开(公告)日：2017-09-27

申请号：EP15861765.4

申请日：2015-11-09

申请人： Tokyo Electron Limited

发明人： HARASHIMA Masayuki

IPC分类号： H01L21/205 ,  C23C16/46 ,  C30B25/10

CPC分类号： C30B25/10 ,  C23C16/325 ,  C23C16/45502 ,  C23C16/4584 ,  C23C16/46 ,  C30B25/12 ,  H01L21/205

摘要： In a film-forming apparatus, a rotary shaft is connected to a rotary stage. A plurality of wafers are placed in a plurality of placement regions arranged in a circumferential direction with respect to a central axis line of the rotary shaft and is held by the rotary stage. The rotary stage is accommodated in an internal space of a susceptor. In this internal space, a gas supply mechanism generates a process gas flow along a direction orthogonal to the axis line from the outside of the rotary stage. A heat insulating material is installed in a heat insulating region in the internal space of the susceptor. The heat insulating region is located more outwardly from the axis line than positions in the placement regions nearest to the central axis line and more inwardly from the central axis line than positions in the placement regions farthest from the axis line.

摘要翻译： 在成膜装置中，旋转轴连接到旋转台。 多个晶片被放置在多个布置在相对于圆周方向的旋转轴的中心轴线设置区域中，并且通过旋转台保持。 旋转台被容纳在基座的内部空间中。 在该内部空间中，气体供给机构从旋转台的外部沿着与轴线正交的方向产生处理气体流。 绝热材料被安装在基座的内部空间中的绝热区域中。 绝热区域位于更向外从轴线比在放置区域的位置最接近于从中心轴线比在从轴线最远的设置区域的位置的中心轴线和更向内。

公开(公告)号：EP2791399B8

公开(公告)日：2017-06-07

申请号：EP12809688

申请日：2012-12-12

申请人： ELEMENT SIX TECH LTD

发明人： DHILLON HARPREET KAUR ,  TWITCHEN DANIEL JAMES ,  KHAN RIZWAN UDDIN AHMAD

IPC分类号： C30B25/10 ,  C30B25/16 ,  C30B25/20 ,  C30B29/04

CPC分类号： C30B29/04 ,  C30B21/02 ,  C30B21/04 ,  C30B25/10 ,  C30B25/16 ,  C30B25/20

公开(公告)号：EP3155145A1

公开(公告)日：2017-04-19

申请号：EP15726035.7

申请日：2015-05-18

申请人： Forschungszentrum Jülich GmbH

发明人： GRÜTZMACHER, Detlev ,  WIRTHS, Stephan ,  BUCA, Dan Mihai ,  MANTL, Siegfried

IPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/52 ,  C30B29/40 ,  C30B29/48 ,  C23C16/455 ,  H01L21/02

CPC分类号： C30B25/10 ,  C09K11/66 ,  C30B25/02 ,  C30B25/183 ,  C30B29/10 ,  C30B29/52 ,  C30B29/68 ,  G02B6/12 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02452 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/0262 ,  H01L31/02322 ,  H01S5/021 ,  H01S5/042 ,  H01S5/3027 ,  H01S5/3054

摘要： The invention relates to a method for monolithically depositing a monocrystalline IV-IV layer that glows when excited and that is composed of a plurality of elements of the IV main group, in particular a GeSn or Si-GeSn layer, said IV-IV layer having a dislocation density less than 6 cm
-2 , on an IV substrate, in particular a silicon or germanium substrate, comprising the following steps: providing a hydride of a first IV element (A), such as Ge
2 H
6 or Si
2 H
6 ; providing a halide of a second IV element (B), such as SnCl
4 ; heating the substrate to a substrate temperature that is less than the decomposition temperature of the pure hydride or of a radical formed therefrom and is sufficiently high that atoms of the first element (A) and of the second element (B) are integrated into the surface in crystalline order, wherein the substrate temperature lies, in particular, in a range between 300°C and 475°C; producing a carrier gas flow of an inert carrier gas, in particular N
2 , Ar, He, which in particular is not H
2 ; transporting the hydride and the halide and decomposition products arising therefrom to the surface at a total pressure of at most 300 mbar; depositing the IV-IV layer, or a layer sequence consisting of IV-IV layers of the same type, having a thickness of at least 200 nm, wherein the deposited layer is, in particular, a Si
y Ge
1
-x-y Sn layer, with x > 0.08 and y ≤ 1.

摘要翻译： 一种用于单片沉积单晶IV-IV层做发光激发时，也由所述IV主族元素中的多个方法，特别是GeSn或Si GeSn层，具有的位错密度的IV-IV层少 超过6厘米2，在上基片IV，特别是硅或锗的衬底，其包括以下步骤：提供第一元件IV（A）的氢化物：如Ge2H6或乙硅烷; 提供第二IV族元素（B）,:如四氯化锡的卤化物; 加热该基材至基材温度并低于从形成在那里的纯氢化的或自由基的分解温度和足够高做的第一元件（A）的原子和所述第二元件（B）的被集成到表面 在晶序，worin基板温度读取，特别是在300℃和475℃之间的范围内。 产生的惰性载气的载气流量，特别是N 2，氩，氦，其中特定不H3; 输送氢化物和卤化物和分解产物所产生从那里到在300毫巴的总压的表面上; 沉积IV-IV层，或由相同类型的IV-IV层的层序列，其厚度至少为200nm，worin沉积层，特别地，一个SiyGe1-X-YSN层，其中x > 0:08和y≦第一

公开(公告)号：EP2791399B1

公开(公告)日：2017-03-29

申请号：EP12809688.0

申请日：2012-12-12

申请人： Element Six Technologies Limited

发明人： DHILLON, Harpreet Kaur ,  TWITCHEN, Daniel James ,  KHAN, Rizwan Uddin Ahmad

IPC分类号： C30B25/10 ,  C30B25/16 ,  C30B25/20 ,  C30B29/04

CPC分类号： C30B29/04 ,  C30B21/02 ,  C30B21/04 ,  C30B25/10 ,  C30B25/16 ,  C30B25/20