公开(公告)号：EP2487712B1

公开(公告)日：2017-11-08

申请号：EP12154739.2

申请日：2012-02-09

申请人： Alta Devices, Inc.

发明人： Nie, Hui ,  Kayes, Brendan M. ,  Kizilyalli, Isik C.

IPC分类号： H01L27/142 ,  H01L31/0304 ,  H01L31/0735 ,  H01L31/0443

CPC分类号： H01L31/03046 ,  H01L27/142 ,  H01L31/0304 ,  H01L31/0443 ,  H01L31/0735 ,  Y02E10/544 ,  Y02P70/521

摘要： Embodiments of the invention generally relate to photovoltaic devices. In one embodiment, a method for forming a gallium arsenide based photovoltaic device includes providing a semiconductor structure, the structure including an absorber layer comprising gallium arsenide. A bypass function is provided in a p-n junction of the semiconductor structure, where under reverse-bias conditions the p-n junction breaks down in a controlled manner by a Zener breakdown effect.

公开(公告)号：EP2434552B1

公开(公告)日：2014-11-05

申请号：EP11182236.7

申请日：2011-09-21

申请人： Alta Devices, Inc.

发明人： Hegedus, Andreas G. ,  Kizilyalli, Isik C.

IPC分类号： H01L31/05 ,  H01L31/02 ,  H01L31/042

CPC分类号： H01L31/0504 ,  H01L31/02021 ,  Y02E10/50

公开(公告)号：EP2434552A3

公开(公告)日：2013-09-25

申请号：EP11182236.7

申请日：2011-09-21

申请人： Alta Devices, Inc.

发明人： Hegedus, Andreas G. ,  Kizilyalli, Isik C.

IPC分类号： H01L31/05 ,  H01L31/02 ,  H01L31/042

CPC分类号： H01L31/0504 ,  H01L31/02021 ,  Y02E10/50

摘要： A method and apparatus for electrical interconnections utilized in devices adapted to capture solar energy, such as solar cells, solar panels and/or solar arrays is described. In one embodiment, a solar panel is described. The solar panel includes a first plurality of solar devices positioned in a center of the solar panel in electrical communication with a first circuit, and a second plurality of solar devices surrounding the first plurality of solar devices, the second plurality of solar devices in electrical communication with a second circuit, the second circuit being different than the first circuit.

公开(公告)号：EP2450957A2

公开(公告)日：2012-05-09

申请号：EP11187679.3

申请日：2011-11-03

申请人： Alta Devices, Inc.

发明人： Kayes, Brendan M. ,  Kizilyalli, Isik C. ,  Nie, Hui ,  Archer, Melissa J.

IPC分类号： H01L31/0224 ,  H01L31/0304 ,  H01L31/0735 ,  H01L31/18 ,  C23C16/06 ,  C23C16/30

CPC分类号： H01L31/022425 ,  H01L31/022441 ,  H01L31/0735 ,  H01L31/1892 ,  Y02E10/544

摘要： Embodiments of the invention generally relate to photovoltaic devices and more specifically, to the metallic contacts disposed on photovoltaic devices, such as photovoltaic cells, and to the fabrication processes for forming such metallic contacts. The metallic contacts contain a palladium germanium alloy formed at low temperatures during an anneal process. In some embodiments, the photovoltaic cell may be heated to a temperature within a range from about 20°Cto about 275°Cduring the anneal process, for example, at about 150°Cfor about 30 minutes. In other embodiments, the photovoltaic cell may be heated to a temperature within a range from about 150°Cto about 275°Cfor a time period of at least about 0.5 minutes during the anneal process.

摘要翻译： 本发明基因的反弹的实施方式涉及光伏器件和更具体地，涉及布置在光伏器件，彩色金属接触：诸如光伏电池，以及制造工艺用于形成寻求金属触点。 金属接触含有退火工艺期间在低温下形成的钯锗合金。 在一些实施方案中，光伏电池可以被加热到范围内的温度从约20℃CTO约275℃Cduring退火过程中，例如，在约150℃保温约30分钟。 在其它实施方案中，光伏电池可以CFOR在退火工艺期间至少约0.5分钟的时间段被加热到范围内的温度从约150℃CTO约275℃。

公开(公告)号：EP2487712A3

公开(公告)日：2016-02-17

申请号：EP12154739.2

申请日：2012-02-09

申请人： Alta Devices, Inc.

发明人： Nie, Hui ,  Kayes, Brendan M. ,  Kizilyalli, Isik C.

IPC分类号： H01L27/142 ,  H01L31/0304 ,  H01L31/0735

CPC分类号： H01L31/03046 ,  H01L27/142 ,  H01L31/0304 ,  H01L31/0443 ,  H01L31/0735 ,  Y02E10/544 ,  Y02P70/521

摘要： Embodiments of the invention generally relate to photovoltaic devices. In one embodiment, a method for forming a gallium arsenide based photovoltaic device includes providing a semiconductor structure, the structure including an absorber layer comprising gallium arsenide. A bypass function is provided in a p-n junction of the semiconductor structure, where under reverse-bias conditions the p-n junction breaks down in a controlled manner by a Zener breakdown effect.

摘要翻译： 本发明的实施例一般涉及光伏器件。 在一个实施方案中，一种用于形成基于砷化镓的光电器件的方法包括提供半导体结构，所述结构包括包含砷化镓的吸收层。 在半导体结构的p-n结中提供旁路功能，其中在反向偏压条件下，p-n结以受齐次性的齐纳击穿效应而分解。

公开(公告)号：EP2487712A2

公开(公告)日：2012-08-15

申请号：EP12154739.2

申请日：2012-02-09

申请人： Alta Devices, Inc.

发明人： Nie, Hui ,  Kayes, Brendan M. ,  Kizilyalli, Isik C.

IPC分类号： H01L27/142 ,  H01L31/0304

CPC分类号： H01L31/03046 ,  H01L27/142 ,  H01L31/0304 ,  H01L31/0443 ,  H01L31/0735 ,  Y02E10/544 ,  Y02P70/521

摘要： Embodiments of the invention generally relate to photovoltaic devices. In one embodiment, a method for forming a gallium arsenide based photovoltaic device includes providing a semiconductor structure, the structure including an absorber layer comprising gallium arsenide. A bypass function is provided in a p-n junction of the semiconductor structure, where under reverse-bias conditions the p-n junction breaks down in a controlled manner by a Zener breakdown effect.

公开(公告)号：EP2434552A2

公开(公告)日：2012-03-28

申请号：EP11182236.7

申请日：2011-09-21

申请人： Alta Devices, Inc.

发明人： Hegedus, Andreas G. ,  Kizilyalli, Isik C.

IPC分类号： H01L31/05

CPC分类号： H01L31/0504 ,  H01L31/02021 ,  Y02E10/50

摘要： A method and apparatus for electrical interconnections utilized in devices adapted to capture solar energy, such as solar cells, solar panels and/or solar arrays is described. In one embodiment, a solar panel is described. The solar panel includes a first plurality of solar devices positioned in a center of the solar panel in electrical communication with a first circuit, and a second plurality of solar devices surrounding the first plurality of solar devices, the second plurality of solar devices in electrical communication with a second circuit, the second circuit being different than the first circuit.

摘要翻译： 描述了在适于捕获太阳能的设备中使用的电互连的方法和装置，例如太阳能电池，太阳能电池板和/或太阳能电池阵列。 在一个实施例中，描述了太阳能电池板。 太阳能面板包括位于与第一电路电连通的太阳能面板的中心的第一多个太阳能装置和围绕第一多个太阳能装置的第二多个太阳能装置，第二多个太阳能装置的电气通信 具有第二电路，第二电路不同于第一电路。