公开(公告)号：EP2487712B1

公开(公告)日：2017-11-08

申请号：EP12154739.2

申请日：2012-02-09

申请人： Alta Devices, Inc.

发明人： Nie, Hui ,  Kayes, Brendan M. ,  Kizilyalli, Isik C.

IPC分类号： H01L27/142 ,  H01L31/0304 ,  H01L31/0735 ,  H01L31/0443

CPC分类号： H01L31/03046 ,  H01L27/142 ,  H01L31/0304 ,  H01L31/0443 ,  H01L31/0735 ,  Y02E10/544 ,  Y02P70/521

摘要： Embodiments of the invention generally relate to photovoltaic devices. In one embodiment, a method for forming a gallium arsenide based photovoltaic device includes providing a semiconductor structure, the structure including an absorber layer comprising gallium arsenide. A bypass function is provided in a p-n junction of the semiconductor structure, where under reverse-bias conditions the p-n junction breaks down in a controlled manner by a Zener breakdown effect.

公开(公告)号：EP2487712A3

公开(公告)日：2016-02-17

申请号：EP12154739.2

申请日：2012-02-09

申请人： Alta Devices, Inc.

发明人： Nie, Hui ,  Kayes, Brendan M. ,  Kizilyalli, Isik C.

IPC分类号： H01L27/142 ,  H01L31/0304 ,  H01L31/0735

CPC分类号： H01L31/03046 ,  H01L27/142 ,  H01L31/0304 ,  H01L31/0443 ,  H01L31/0735 ,  Y02E10/544 ,  Y02P70/521

摘要： Embodiments of the invention generally relate to photovoltaic devices. In one embodiment, a method for forming a gallium arsenide based photovoltaic device includes providing a semiconductor structure, the structure including an absorber layer comprising gallium arsenide. A bypass function is provided in a p-n junction of the semiconductor structure, where under reverse-bias conditions the p-n junction breaks down in a controlled manner by a Zener breakdown effect.

摘要翻译： 本发明的实施例一般涉及光伏器件。 在一个实施方案中，一种用于形成基于砷化镓的光电器件的方法包括提供半导体结构，所述结构包括包含砷化镓的吸收层。 在半导体结构的p-n结中提供旁路功能，其中在反向偏压条件下，p-n结以受齐次性的齐纳击穿效应而分解。

公开(公告)号：EP2487712A2

公开(公告)日：2012-08-15

申请号：EP12154739.2

申请日：2012-02-09

申请人： Alta Devices, Inc.

发明人： Nie, Hui ,  Kayes, Brendan M. ,  Kizilyalli, Isik C.

IPC分类号： H01L27/142 ,  H01L31/0304

CPC分类号： H01L31/03046 ,  H01L27/142 ,  H01L31/0304 ,  H01L31/0443 ,  H01L31/0735 ,  Y02E10/544 ,  Y02P70/521

摘要： Embodiments of the invention generally relate to photovoltaic devices. In one embodiment, a method for forming a gallium arsenide based photovoltaic device includes providing a semiconductor structure, the structure including an absorber layer comprising gallium arsenide. A bypass function is provided in a p-n junction of the semiconductor structure, where under reverse-bias conditions the p-n junction breaks down in a controlled manner by a Zener breakdown effect.

公开(公告)号：EP2450956B1

公开(公告)日：2019-09-04

申请号：EP11187659.5

申请日：2011-11-03

申请人： Alta Devices, Inc.

发明人： Nie, Hui ,  Kayes, Brendan M. ,  Kizilyalli, Isik

IPC分类号： H01L31/0735 ,  H01L31/0224 ,  H01L31/18

公开(公告)号：EP2450956A3

公开(公告)日：2017-10-25

申请号：EP11187659.5

申请日：2011-11-03

申请人： Alta Devices, Inc.

发明人： Nie, Hui ,  Kayes, Brendan M. ,  Kizilyalli, Isik

IPC分类号： H01L31/0735 ,  H01L31/0224 ,  H01L31/18

CPC分类号： H01L31/0735 ,  H01L31/022441 ,  H01L31/1896 ,  Y02E10/52 ,  Y02E10/544

摘要： Embodiments of the invention generally relate to optoelectronic semiconductor devices such as photovoltaic devices including solar cells. In one aspect, an optoelectronic semiconductor device includes an absorber layer made of gallium arsenide (GaAs) and having only one type of doping. An emitter layer is located closer than the absorber layer to a back side of the device, the emitter layer made of a different material than the absorber layer and having a higher bandgap than the absorber layer. A heterojunction formed between the emitter layer and the absorber layer, and a p-n junction is formed between the emitter layer and the absorber layer and at least partially within the different material at a location offset from the heterojunction. The p-n junction causes a voltage to be generated in the device in response to the device being exposed to light at a front side of the device.

摘要翻译： 本发明的实施例总体上涉及光电子半导体器件，例如包括太阳能电池的光伏器件。 在一个方面，光电子半导体器件包括由砷化镓（GaAs）制成并且仅具有一种掺杂类型的吸收层。 发射极层比吸收层更靠近器件的背侧，发射极层由与吸收层不同的材料制成并且具有比吸收层更高的带隙。 在发射极层和吸收层之间形成的异质结以及p-n结形成在发射极层和吸收层之间，并且在偏离异质结的位置处至少部分地位于不同材料内。 响应于装置暴露于装置正面的光线，p-n结导致装置中产生电压。

公开(公告)号：EP2450957A2

公开(公告)日：2012-05-09

申请号：EP11187679.3

申请日：2011-11-03

申请人： Alta Devices, Inc.

发明人： Kayes, Brendan M. ,  Kizilyalli, Isik C. ,  Nie, Hui ,  Archer, Melissa J.

IPC分类号： H01L31/0224 ,  H01L31/0304 ,  H01L31/0735 ,  H01L31/18 ,  C23C16/06 ,  C23C16/30

CPC分类号： H01L31/022425 ,  H01L31/022441 ,  H01L31/0735 ,  H01L31/1892 ,  Y02E10/544

摘要： Embodiments of the invention generally relate to photovoltaic devices and more specifically, to the metallic contacts disposed on photovoltaic devices, such as photovoltaic cells, and to the fabrication processes for forming such metallic contacts. The metallic contacts contain a palladium germanium alloy formed at low temperatures during an anneal process. In some embodiments, the photovoltaic cell may be heated to a temperature within a range from about 20°Cto about 275°Cduring the anneal process, for example, at about 150°Cfor about 30 minutes. In other embodiments, the photovoltaic cell may be heated to a temperature within a range from about 150°Cto about 275°Cfor a time period of at least about 0.5 minutes during the anneal process.

摘要翻译： 本发明基因的反弹的实施方式涉及光伏器件和更具体地，涉及布置在光伏器件，彩色金属接触：诸如光伏电池，以及制造工艺用于形成寻求金属触点。 金属接触含有退火工艺期间在低温下形成的钯锗合金。 在一些实施方案中，光伏电池可以被加热到范围内的温度从约20℃CTO约275℃Cduring退火过程中，例如，在约150℃保温约30分钟。 在其它实施方案中，光伏电池可以CFOR在退火工艺期间至少约0.5分钟的时间段被加热到范围内的温度从约150℃CTO约275℃。

公开(公告)号：EP2450956A2

公开(公告)日：2012-05-09

申请号：EP11187659.5

申请日：2011-11-03

申请人： Alta Devices, Inc.

发明人： Nie, Hui ,  Kayes, Brendan M. ,  Kizilyalli, Isik

IPC分类号： H01L31/0224 ,  H01L31/0735

CPC分类号： H01L31/0735 ,  H01L31/022441 ,  H01L31/1896 ,  Y02E10/52 ,  Y02E10/544

摘要： Embodiments of the invention generally relate to optoelectronic semiconductor devices such as photovoltaic devices including solar cells. In one aspect, an optoelectronic semiconductor device includes an absorber layer made of gallium arsenide (GaAs) and having only one type of doping. An emitter layer is located closer than the absorber layer to a back side of the device, the emitter layer made of a different material than the absorber layer and having a higher bandgap than the absorber layer. A heterojunction formed between the emitter layer and the absorber layer, and a p-n junction is formed between the emitter layer and the absorber layer and at least partially within the different material at a location offset from the heterojunction. The p-n junction causes a voltage to be generated in the device in response to the device being exposed to light at a front side of the device.

摘要翻译： 本发明的实施例一般涉及光电子半导体器件，例如包括太阳能电池的光伏器件。 一方面，光电子半导体器件包括由砷化镓（GaAs）制成并且仅具有一种掺杂类型的吸收层。 发射极层位于比吸收层更靠近器件的背面，发射极层由与吸收层不同的材料制成，具有比吸收层更高的带隙。 在发射极层和吸收体层之间形成的异质结和在发射极层和吸收体层之间形成p-n结，并且在偏离异质结的位置处至少部分地在不同的材料内形成异质结。 p-n结导致器件响应于器件暴露于器件前侧的光而产生电压。