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公开(公告)号:EP1320901A1
公开(公告)日:2003-06-25
申请号:EP01961721.6
申请日:2001-07-25
发明人: CHEN, Changhua , DONG, James , LIU, Heng , Cheng, Xiuping
IPC分类号: H01L33/00
CPC分类号: H01L21/0254 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L33/007
摘要: A GaN based three layer buffer (11) on a sapphire substrate (101) provides a template for growth of a high quality I GaN layer (105) as a substrate for growth of a Nitride based LED.