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公开(公告)号：EP4345913A1
公开(公告)日：2024-04-03
申请号：EP22831895.2
申请日：2022-06-24
发明人： XIN, Ke , ZHOU, Su , GONG, Daoren , WANG, Wenjing , XU, Xiaohua , MEI, Zhigang , YANG, Long
IPC分类号： H01L31/0224 , H01L31/0288 , H01L31/074 , H01L31/18 , H01L31/072 , H01L31/052
摘要： The present application provides a heterojunction solar cell and a preparation method therefor. The heterojunction solar cell comprises: a semiconductor substrate layer; and a back composite transparent conductive film located on one side of the semiconductor substrate layer. The back surface composite transparent conductive film comprises: a first back surface transparent conductive film; and a second back transparent conductive film located on the side surface of the first back transparent conductive film facing away from the semiconductor substrate layer. Both the first back transparent conductive film and the second back transparent conductive film are doped with group III heavy atoms, and the concentration of the group III heavy atoms in the second back transparent conductive film is less than that of the group III heavy atoms in the first back transparent conductive film. By means of the technical solution, both the photoelectric conversion efficiency and the packaging performance of the heterojunction solar cell are improved.
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公开(公告)号：EP4354518A1
公开(公告)日：2024-04-17
申请号：EP22836743.9
申请日：2022-06-24
发明人： XU, Xiaohua , XIN, Ke , ZHOU, Su , GONG, Daoren , WANG, Wenjing , LI, Chen , CHEN, Mengying , CHENG, Shangzhi
IPC分类号： H01L31/0288 , H01L31/0352 , H01L31/0747 , H01L31/20
CPC分类号： Y02E10/50 , Y02P70/50 , Y02E10/548
摘要： Provided in the present application are a heterojunction cell and a method for preparing same. The heterojunction cell comprises: a semiconductor substrate layer; and an intrinsic semiconductor composite layer, wherein the intrinsic semiconductor composite layer is located on the surface of at least one side of the semiconductor substrate layer, and the intrinsic semiconductor composite layer comprises: a bottom intrinsic layer; and a wide-band-gap intrinsic layer, which is located on the surface of the side of the bottom intrinsic layer that is away from the semiconductor substrate layer, the band gap of the wide-band-gap intrinsic layer being greater than the band gap of the bottom intrinsic layer. The band gap of a wide-band-gap intrinsic layer is larger, and when sunlight irradiates a heterojunction cell, photons, the energy of which is less than that of the band gap of the wide-band-gap intrinsic layer, cannot be subjected to parasitic absorption, thereby reducing the parasitic absorption of the sunlight by an intrinsic semiconductor composite layer, such that the absorption of the sunlight by a semiconductor substrate layer is increased, and photon-generated carriers generated by the semiconductor substrate layer are increased, thereby increasing a short-circuit current of the heterojunction cell, and improving the conversion efficiency of the heterojunction cell.
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