HYBRID ORGANIC LIGHT-EMITTING DIODE DISPLAY PANEL AND METHOD FOR MANUFACTURING SAME

    公开(公告)号:EP4418835A1

    公开(公告)日:2024-08-21

    申请号:EP22881142.8

    申请日:2022-03-31

    摘要: Disclosed are: a hybrid organic light-emitting diode (OLED) display panel and a method for manufacturing same. The hybrid OLED display panel according to an embodiment comprises: an OLED panel including a plurality of pixels arranged in a predetermined first array structure on a substrate, wherein each of the plurality of pixels includes a pixel light emitting part, and wherein the pixel light emitting part includes an OLED, a driving thin film transistor configured to drive the OLED, and a switching thin film transistor configured to switch the driving thin film transistor; and a solar cell including a plurality of pixel solar cells arranged in the first array structure to correspond to the plurality of pixels on the substrate, wherein each of the plurality of pixel solar cells is disposed to correspond to the pixel light emitting part within a pixel area set as a pixel unit.

    SOLAR CELL, MULTI-JUNCTION SOLAR CELL, SOLAR CELL MODULE, AND SOLAR POWER GENERATION SYSTEM

    公开(公告)号:EP4199121A1

    公开(公告)日:2023-06-21

    申请号:EP21949392.1

    申请日:2021-07-09

    IPC分类号: H01L31/072

    摘要: Solution to Problem of the present invention provides a solar cell, a solar cell module, and a photovoltaic power generation system having excellent. A solar cell according to an embodiment includes a p-electrode, a p-type light-absorbing layer containing a cuprous oxide or/and a complex oxide of cuprous oxides as a main component on the p-electrode, an n-type layer containing an oxide containing Ga on the p-type light-absorbing layer, and an n-electrode. A first region is included between the p-type light-absorbing layer and the n-type layer. The first region is a region from a depth of 2 nm from an interface between the p-type light-absorbing layer and the n-type layer toward the p-type light absorbing layer to a depth of 2 nm from the interface between the p-type light-absorbing layer and the n-type layer toward the n-type layer. Cu, Ga, M1, and O are contained in the first region. M1 is one or more elements selected from the group consisting of Sn, Sb, Ag, Li, Na, K, Cs, Rb, Al, In, Zn, Mg, Si, Ge, N, B, Ti, Hf, Zr, and Ca. A ratio of Cu, Ga, M1, and O is a1 : b1 : c1 : d1. a1, b1, c1, and d1 satisfy 1.80 ≤ a1 ≤ 2.20, 0.005 ≤ b1 ≤ 0.05, 0 ≤ c1 ≤ 0.20, and 0.60 ≤ d1 ≤ 1.00.