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    POWER AND DATA ROUTING STRUCTURES FOR ORGANIC LIGHT-EMITTING DIODE DISPLAYS
    4.
    发明公开
    POWER AND DATA ROUTING STRUCTURES FOR ORGANIC LIGHT-EMITTING DIODE DISPLAYS 审中-公开

    公开(公告)号：EP3907729A1

    公开(公告)日：2021-11-10

    申请号：EP21183438.7

    申请日：2017-01-19

    申请人： Apple Inc.

    发明人： LIN, Chin-Wei ,  POON, Stephen S. ,  RIEUTORT-LOUIS, Warren S. ,  YU, Cheng-Ho ,  LEE, ChoongHo ,  LEE, Doh-Hyoung ,  CHANG, Ting-Kuo ,  GUPTA, Vasudha ,  LEE, Younggu

    IPC分类号： G09G3/3233 ,  H01L27/32

    摘要： An organic light-emitting diode display may have thin- film transistor circuitry formed on a substrate. The display and substrate may have rounded corners. A pixel definition layer may be formed on the thin- film transistor circuitry. Openings in the pixel definition layer may be provided with emissive material overlapping respective anodes for organic light- emitting diodes. A cathode layer may cover the array of pixels. A ground power supply path may be used to distribute a ground voltage to the cathode layer. The ground power supply path may be formed from a metal layer that is shorted to the cathode layer using portions of a metal layer that forms anodes for the diodes, may be formed from a mesh shaped metal pattern, may have L-shaped path segments, may include laser-deposited metal on the cathode layer, and may have other structures that facilitate distribution of the ground power supply.

    ELECTRONIC DISPLAY WITH HYBRID IN-PIXEL AND EXTERNAL COMPENSATION
    5.
    发明公开
    ELECTRONIC DISPLAY WITH HYBRID IN-PIXEL AND EXTERNAL COMPENSATION 审中-公开

    公开(公告)号：EP3680889A1

    公开(公告)日：2020-07-15

    申请号：EP20150868.6

    申请日：2020-01-09

    申请人： Apple Inc.

    发明人： LIN, Chin-Wei ,  ONO, Shinya ,  LEE, Zino ,  WANG, Yun ,  GUI, Fan

    IPC分类号： G09G3/3233

    摘要： A display pixel is provided that is operable to support hybrid compensation scheme having both in-pixel threshold voltage canceling and external threshold voltage compensation. The display may include multiple p-type silicon transistors with at least one n-type semiconducting-oxide transistor and one storage capacitor. An on-bias stress phase may be performed prior to a threshold voltage sampling and data programming phase to mitigate hysteresis and improve first frame response. In low refresh rate displays, a first additional on-bias stress operation can be performed separate from the threshold voltage sampling and data programming phase during a refresh frame and a second additional on-bias stress operation can be performed during a vertical blanking frame. The display pixel may be configured to receive an initialization voltage and an anode reset voltage, either of which can be dynamically tuned to match the stress of the first and second additional on-bias stress operations to minimize flicker.

    DISPLAY WITH LIGHT-EMITTING DIODES
    6.
    发明公开
    DISPLAY WITH LIGHT-EMITTING DIODES 审中-公开

    公开(公告)号：EP3365887A1

    公开(公告)日：2018-08-29

    申请号：EP16790797.1

    申请日：2016-10-17

    申请人： Apple Inc.

    发明人： LIN, Chin-Wei ,  LIN, Hung Sheng ,  CHANG, Shih-Chang

    IPC分类号： G09G3/3233

    CPC分类号： G09G3/3233 ,  G09G3/3266 ,  G09G3/3275 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/0202 ,  G09G2320/0295 ,  G09G2320/043 ,  H01L27/1225 ,  H01L29/78651 ,  H01L29/7869

    摘要： A display may have an array of pixels each of which has a light-emitting diode such as an organic light-emitting diode. A drive transistor and an emission transistor may be coupled in series with the light-emitting diode of each pixel between a positive power supply and a ground power supply. The pixels may include first and second switching transistors. A data storage capacitor may be coupled between a gate and source of the drive transistor in each pixel. Signal lines may be provided in columns of pixels to route signals such as data signals, sensed drive currents from the drive transistors, and predetermined voltages between display driver circuitry and the pixels. The switching transistors, emission transistors, and drive transistors may include semiconducting-oxide transistors and silicon transistors and may be n-channel transistors or p-channel transistors.