公开(公告)号：EP0837497A2

公开(公告)日：1998-04-22

申请号：EP97307549.2

申请日：1997-09-25

申请人： Applied Materials, Inc.

发明人： Kumar, Ajay ,  Chinn, Jeffrey ,  Deshmukh, Shashank C. ,  Jiang, Weinan ,  Guenter, Rolf Adolf ,  Minaee, Bruce ,  Wiltse, Mark

IPC分类号： H01L21/321

CPC分类号： H01L21/32135

摘要： An etchant composition of nitrogen trifluoride and chlorine, preferably also including a passivation material such as hydrogen bromide, etches tungsten silicide-polysilicon gate layers with high selectivity to a thin underlying silicon oxide gate oxide layer to form straight wall, perpendicular profiles with low microloading and excellent profile control.

摘要翻译： 三氯化氮和氯的蚀刻剂组合物，优选还包括钝化材料如溴化氢，蚀刻钨硅化物 - 多晶硅栅极层，其具有对薄的底层氧化硅栅极氧化物层的高选择性，以形成具有低微载荷的直壁，垂直剖面， 优秀的档案控制。

公开(公告)号：EP0837497A3

公开(公告)日：1998-06-10

申请号：EP97307549.2

申请日：1997-09-25

申请人： Applied Materials, Inc.

发明人： Kumar, Ajay ,  Chinn, Jeffrey ,  Deshmukh, Shashank C. ,  Jiang, Weinan ,  Guenter, Rolf Adolf ,  Minaee, Bruce ,  Wiltse, Mark

IPC分类号： H01L21/321

CPC分类号： H01L21/32135

摘要： An etchant composition of nitrogen trifluoride and chlorine, preferably also including a passivation material such as hydrogen bromide, etches tungsten silicide-polysilicon gate layers with high selectivity to a thin underlying silicon oxide gate oxide layer to form straight wall, perpendicular profiles with low microloading and excellent profile control.