公开(公告)号：EP1064671A1

公开(公告)日：2001-01-03

申请号：EP99911348.3

申请日：1999-03-11

申请人： Applied Materials, Inc.

发明人： LI, Steven, T. ,  RUSPINI, Andrew, J. ,  HO, Henry ,  CHANG, Yu ,  CHEN, Aihua ,  BUI, Binh

IPC分类号： H01J37/32

CPC分类号： H01J37/32862 ,  H01J37/321 ,  H01J2237/335

摘要： An apparatus comprising a semiconductor processing chamber, a plasma generator, and a pipe connecting a semiconductor processing chamber and the plasma generator. The plasma generator includes a generation chamber, a radio frequency generator which generates an ion plasma within the generation chamber, and a magnetic device which confines the plasma primarily within a center region of the generation chamber.