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    CONTROL OF CHEMICAL MECHANICAL POLISHING PAD CONDITIONER DIRECTIONAL VELOCITY TO IMPROVE PAD LIFE
    1.
    发明公开
    CONTROL OF CHEMICAL MECHANICAL POLISHING PAD CONDITIONER DIRECTIONAL VELOCITY TO IMPROVE PAD LIFE 审中-公开
    线速梳妆台的用于化学机械抛光垫上，以增加其寿命管理

    公开(公告)号：EP1401614A1

    公开(公告)日：2004-03-31

    申请号：EP02739901.3

    申请日：2002-06-17

    申请人： Applied Materials, Inc.

    发明人： PAIK, Young, Joseph

    IPC分类号： B24B37/04 ,  B24B49/18 ,  B24B53/007

    CPC分类号： B24B37/013 ,  B24B37/042 ,  B24B49/03 ,  B24B49/18 ,  B24B53/017 ,  G05B19/00 ,  G05B19/19 ,  G05B19/41865 ,  G05B2219/32053 ,  G05B2219/32065 ,  G05B2219/45031 ,  H01L21/31053 ,  H01L21/67253 ,  H01L21/67276 ,  H01L22/20 ,  Y02P80/40 ,  Y02P90/20

    摘要： A method, apparatus and medium of conditioning a planarizing surface includes installing a wafer to be polished in a chemical mechanical polishing (CMP) apparatus (100) having a polishing pad (102) and a conditioning disk (108), polishing the wafer under a first set of pad conditioning parameters selected to maintain wafer material removal rates with preselected minimum and maximum removal rates, determining a wafer material removal rate occurring during the polishing step, calculating updated pad conditioning parameters to maintain wafer material removal rates within the maximum and minimum removal rates, and conditioning the polishing pad using the updated pad conditioning parameters, wherein the updated pad conditioning parameters are calculated by a pad wear and conditioning model that predicts the wafer material removal rate of the polishing pad based upon the rotational speed and direction of the conditioning disk.

    摘要翻译： 一种方法，装置和调节的介质的平坦化表面包括安装的晶片在具有抛光垫和修整盘的化学机械研磨（CMP）设备进行抛光，有选择地保持第一组垫调节参数下抛光晶片 晶片材料去除速率与预选的最小和最大去除速率，确定性采矿的晶片材料去除速率在抛光步骤发生的，在计算更新的垫调节参数，以保持最大和最小去除速率内晶片的材料去除速率，并调节使用所述抛光垫 更新垫调节参数，worin更新垫调节参数由垫磨损和调节模型计算并预测基于所述旋转速度和所述调节盘的方向上的抛光垫的晶片材料去除速率。