公开(公告)号：EP1399960A1

公开(公告)日：2004-03-24

申请号：EP02737523.7

申请日：2002-06-17

申请人： Applied Materials, Inc.

发明人： SHANMUGASUNDRAM, Arulkumar, P. ,  SCHWARM, Alexander, T.

IPC分类号： H01L21/66

CPC分类号： B24B37/013 ,  B24B37/042 ,  B24B49/03 ,  B24B49/18 ,  G05B19/00 ,  G05B19/19 ,  G05B19/41865 ,  G05B2219/32053 ,  G05B2219/32065 ,  G05B2219/45031 ,  H01L21/31053 ,  H01L21/67253 ,  H01L21/67276 ,  H01L22/20 ,  H01L2924/0002 ,  Y02P90/20 ,  H01L2924/00

摘要： A wafer property is controlled by a semiconductor processing tool using data collected from an in situ sensor. Initially, data relating to the wafer property is collected by the in situ sensor during a process executed according to a wafer recipe parameters. Subsequently, the process may be adjusted by modifying the recipe parameters according to comparisons between the data collected by the in situ sensor relating to the wafer property and the results predicted by a process model used to predict wafer outputs. A subsequent process utilizing the data collected by the in situ sensor is then executed. In at least some embodiments of the present invention the data may be used for run-to-run control on subsequent wafers processed by the tool.

公开(公告)号：EP1253497A1

公开(公告)日：2002-10-30

申请号：EP01110455.1

申请日：2001-04-27

申请人： Infineon Technologies SC300 GmbH & Co. KG ,  Infineon Technologies AG ,  MOTOROLA, INC.

发明人： Mautz, Karl ,  Schedel, Thorsten ,  Schmidt, Sebastian

IPC分类号： G05B19/418 ,  H01L21/66

CPC分类号： G03F7/70625 ,  G03F7/70633 ,  G05B19/4188 ,  G05B2219/32053 ,  G05B2219/32055 ,  G05B2219/32056 ,  G05B2219/36377 ,  G05B2219/45232 ,  H01L22/20 ,  Y02P90/10 ,  Y02P90/20 ,  Y02P90/24

摘要： Processing parameters of at least one plate-like object(20), e.g. a semiconductor device or wafer, or a flat panel display, in a processing tool (1) are adjusted depending on which processing device (2a) out of at least one set of processing devices (2a, 2b) has been used for the semiconductor device (20) in a preceding step. This is provided by generating a virtual or physical token (10a), which connects the semiconductor device (20) identification with the processing device (2a, 2b) identification. This enables a compensation of tool-dependent effects in previous processing of a single device. An example is chemical mechanical polishing prior to lithography, where alignment marks can be deteriorated differently between CMP-apparatus. The amount of compensation is detected and evaluated by means of metrology tools, which - depending on the sequence of the metrology step relative to the processing step to be adjusted - either feed-forward or feed-backward their results to the processing tool (1). The yield of semiconductor device production is advantageously increased.

摘要翻译： 至少一个平板状物体（20），E G的处理参数 半导体装置或晶片或平板显示器中，在处理工具（1）被调整DEPENDING ON出至少一组处理设备的（2A，2B）已被用于半导体装置，其处理装置（2a）的 （20）在一个步骤preceding-。 这是通过生成虚拟或物理令牌（10A），其中半导体器件（20）与所述识别处理装置（2A，2B）识别连接提供。 这使得能够在单个装置中的前一处理工具依赖效应的补偿。 一个例子是光刻，其中对准标记可以不同CMP设备之间劣化之前机械抛光的化学物质。 被检测的补偿量和的计量工具，其中来评价 - 根据测量步骤相对于处理步骤的顺序进行调整， - 可以是前馈或馈向后他们的结果向处理工具（1） ， 半导体器件生产的产率有利地增加。

公开(公告)号：EP0456218A2

公开(公告)日：1991-11-13

申请号：EP91107493.8

申请日：1991-05-08

申请人： HITACHI, LTD. ,  HITACHI KEIYO ENGINEERING CO., LTD.

发明人： Fujino, Motoaki ,  Oouchida, Makoto ,  Kobayashi, Junichi ,  Matsubara, Masayuki ,  Tsuruta, Norio ,  Naruke, Yoshinori ,  Ohzeki, Masayoshi ,  Tsuji, Masao ,  Higashi, Housei ,  Kamikubo, Tadamasa ,  Sakurai, Syunki

IPC分类号： H05K13/00 ,  H05K13/08 ,  G05B19/417

CPC分类号： H05K13/08 ,  G05B19/4183 ,  G05B2219/31399 ,  G05B2219/32053 ,  G05B2219/32054 ,  G05B2219/32148 ,  G05B2219/32149 ,  Y02P90/10

摘要： An automated manufacture line comprises a host controller device (3; 7f; 7d) which sets individual control conditions and a plurality of automatic working devices (10-22; 23, 24) which are connected to the host controller device and perform their automatic works. Each automatic working device includes a carry portion (11 a, 17a, 18a) for carrying in an object to be processed from the upper stream side of the line and carrying out it to the lower stream side of the line, an input portion (10i, 11i, 17i, 18i) capable of inputting work data concerning the object handled by its own automatic working device, and a controller (11g, 17g, 18g, 23d, 24e) for adjusting a work parameter of its own automatic working device on the basis of the work data inputted from the input portion or work data transmitted from another automatic working device on the upper stream side of the line, outputting the work data to another automatic working device provided on the lower stream side of the line, driving the carry portion in response to an object carry-out request signal from another automatic working device provided on the lower stream side of the line to carry out the object to that automatic working device, and outputting an object carry-out request signal to another automatic working device positioned on the upper stream side of its own automatic working device.

摘要翻译： 自动化生产线包括设置各个控制条件的主机控制器设备（3; 7f; 7d）和连接到主机控制器设备并执行其自动工作的多个自动工作设备（10-22; 23,24） 。 每个自动加工装置包括用于从线的上游侧承载待加工物体并将其运送到线路的下游侧的进位部分（11a，17a，18a），输入部分（10i， 11i，17i，18i）能够输入与其自己的自动工作装置所处理的物体有关的工作数据;以及控制器（11g，17g，18g，23d，24e），用于基于其自身的工作装置的工作参数 从输入部分输入的工作数据或从在线路的上游侧的另一自动工作装置发送的工作数据，将工作数据输出到设置在下游侧的另一自动工作装置，驱动该进位部分 响应于来自设置在该线路的下游侧的另一自动工作装置的对象执行请求信号来执行该自动工作装置的对象，并且将对象执行请求信号输出到 其他自动工作装置位于自身工作装置的上游侧。

公开(公告)号：EP1253497B1

公开(公告)日：2008-04-02

申请号：EP01110455.1

申请日：2001-04-27

申请人： Qimonda Dresden GmbH & Co. oHG ,  Qimonda AG ,  MOTOROLA, INC.

发明人： Mautz, Karl ,  Schedel, Thorsten ,  Schmidt, Sebastian

IPC分类号： G05B19/418 ,  H01L21/66

CPC分类号： G03F7/70625 ,  G03F7/70633 ,  G05B19/4188 ,  G05B2219/32053 ,  G05B2219/32055 ,  G05B2219/32056 ,  G05B2219/36377 ,  G05B2219/45232 ,  H01L22/20 ,  Y02P90/10 ,  Y02P90/20 ,  Y02P90/24

公开(公告)号：EP1399962A1

公开(公告)日：2004-03-24

申请号：EP02742127.0

申请日：2002-06-17

申请人： Applied Materials, Inc.

发明人： SHANMUGASUNDRAM, Arulkumar, P. ,  SCHWARM, Alexander, T. ,  PRABHU, Gopalakrishna, B.

IPC分类号： H01L21/66

CPC分类号： B24B37/013 ,  B24B37/042 ,  B24B49/03 ,  B24B49/04 ,  B24B49/18 ,  G05B19/00 ,  G05B19/19 ,  G05B19/41865 ,  G05B2219/32053 ,  G05B2219/32065 ,  G05B2219/45031 ,  H01L21/31053 ,  H01L21/67253 ,  H01L21/67276 ,  H01L22/20 ,  H01L2924/0002 ,  Y02P90/20 ,  Y02P90/22 ,  H01L2924/00

摘要： A method of controlling surface non-uniformity of a wafer in a polishing operation includes (a) providing a model for a wafer polishing that defines a plurality of regions on a wafer and identifies a wafer material removal rate in a polishing step of a polishing process for each of the regions, wherein the polishing process comprises a plurality of polishing steps, (b) polishing a wafer using a first polishing recipe based upon an incoming wafer thickness profile, (c) determining a wafer thickness profile for the post-polished wafer of step (b), and (d) calculating an updated polishing recipe based upon the wafer thickness profile of step (c) and the model of step (a) to maintain a target wafer thickness profile. The model defines the effect of tool state on polishing effectiveness. The method can be used to provide feedback to a plurality of platen stations.

公开(公告)号：EP0456218B1

公开(公告)日：1997-01-15

申请号：EP91107493.8

申请日：1991-05-08

申请人： HITACHI, LTD. ,  HITACHI KEIYO ENGINEERING CO., LTD.

发明人： Fujino, Motoaki ,  Ouchida, Makoto ,  Kobayashi, Junichi ,  Matsubara, Masayuki ,  Tsuruta, Norio ,  Naruke, Yoshinori ,  Ohzeki, Masayoshi ,  Tsuji, Masao ,  Higashi, Housei ,  Kamikubo, Tadamasa ,  Sakurai, Syunki

IPC分类号： G05B19/418 ,  H05K13/08

CPC分类号： H05K13/08 ,  G05B19/4183 ,  G05B2219/31399 ,  G05B2219/32053 ,  G05B2219/32054 ,  G05B2219/32148 ,  G05B2219/32149 ,  Y02P90/10

公开(公告)号：EP3278186A1

公开(公告)日：2018-02-07

申请号：EP16729546.8

申请日：2016-06-13

申请人： Siemens Aktiengesellschaft

发明人： FEITEN, Wendelin ,  HELD, Harald ,  STELZIG, Philipp Emanuel ,  WURM, Kai

IPC分类号： G05B13/02 ,  G05B19/042 ,  G05B19/418

CPC分类号： G05B19/0405 ,  G05B13/02 ,  G05B13/0205 ,  G05B19/0421 ,  G05B19/048 ,  G05B19/41865 ,  G05B2219/31076 ,  G05B2219/31206 ,  G05B2219/32015 ,  G05B2219/32053 ,  G05B2219/33273 ,  Y02P90/20

摘要： The control device (CTL) according to the invention for a production module (PM) has a data memory (MEM) for storing operational settings (LBE) of production modules (PM, PMA) and restrictions (LCR, ICR, ECR) which must be complied with by at least some of the operational settings. A settings management module (EM) is used to determine the external operational setting (XA
1 ) of an adjacent production module (PMA) on which a local operational setting (X
i ) of the production module (PM) is dependent on the basis of a common restriction (ICR). An optimization module (OPT) is also provided and has a local assessment function (LBF), which assesses the local operational setting (X
i ), and a further assessment function (EBF) which assesses non-compliance with the common restriction (ICR). The optimization module (OPT) is set up to determine an optimized local operational setting (OLBE, X
i ) by optimizing the local assessment function (LBF), reading in the external operational setting (XA
1 ) determined and optimizing the further assessment function (EBF) on the basis of the external operational setting (XA
1 ) which has been read in. A control module (SM) is also used to set the optimized local operational setting (OLBE) in the production module (PM).

公开(公告)号：EP1401614A1

公开(公告)日：2004-03-31

申请号：EP02739901.3

申请日：2002-06-17

申请人： Applied Materials, Inc.

发明人： PAIK, Young, Joseph

IPC分类号： B24B37/04 ,  B24B49/18 ,  B24B53/007

CPC分类号： B24B37/013 ,  B24B37/042 ,  B24B49/03 ,  B24B49/18 ,  B24B53/017 ,  G05B19/00 ,  G05B19/19 ,  G05B19/41865 ,  G05B2219/32053 ,  G05B2219/32065 ,  G05B2219/45031 ,  H01L21/31053 ,  H01L21/67253 ,  H01L21/67276 ,  H01L22/20 ,  Y02P80/40 ,  Y02P90/20

摘要： A method, apparatus and medium of conditioning a planarizing surface includes installing a wafer to be polished in a chemical mechanical polishing (CMP) apparatus (100) having a polishing pad (102) and a conditioning disk (108), polishing the wafer under a first set of pad conditioning parameters selected to maintain wafer material removal rates with preselected minimum and maximum removal rates, determining a wafer material removal rate occurring during the polishing step, calculating updated pad conditioning parameters to maintain wafer material removal rates within the maximum and minimum removal rates, and conditioning the polishing pad using the updated pad conditioning parameters, wherein the updated pad conditioning parameters are calculated by a pad wear and conditioning model that predicts the wafer material removal rate of the polishing pad based upon the rotational speed and direction of the conditioning disk.

摘要翻译： 一种方法，装置和调节的介质的平坦化表面包括安装的晶片在具有抛光垫和修整盘的化学机械研磨（CMP）设备进行抛光，有选择地保持第一组垫调节参数下抛光晶片 晶片材料去除速率与预选的最小和最大去除速率，确定性采矿的晶片材料去除速率在抛光步骤发生的，在计算更新的垫调节参数，以保持最大和最小去除速率内晶片的材料去除速率，并调节使用所述抛光垫 更新垫调节参数，worin更新垫调节参数由垫磨损和调节模型计算并预测基于所述旋转速度和所述调节盘的方向上的抛光垫的晶片材料去除速率。

公开(公告)号：EP1399961A2

公开(公告)日：2004-03-24

申请号：EP02739908.8

申请日：2002-06-17

申请人： Applied Materials, Inc.

发明人： SHANMUGASUNDRAM, Arulkumar, P. ,  SCHWARM, Alexander, T.

IPC分类号： H01L21/66

CPC分类号： B24B37/013 ,  B24B37/042 ,  B24B49/03 ,  B24B49/18 ,  B24B53/017 ,  G05B19/00 ,  G05B19/19 ,  G05B19/41865 ,  G05B2219/32053 ,  G05B2219/32065 ,  G05B2219/45031 ,  H01L21/31053 ,  H01L21/67253 ,  H01L21/67276 ,  H01L22/20 ,  Y02P90/14 ,  Y02P90/20 ,  Y02P90/22 ,  Y02P90/86

摘要： A system, methods and mediums are provided for dynamic adjustment of sampling plans in connection with a wafer (or other device) to be measured. A sampling plan provides information on specific measure points within a die, a die being the section on the wafer that will eventually become a single chip after processing. There are specified points within the die that are candidates for measuring. The stored die map information may be retrieved and translated to determine the available points for measurement on the wafer. The invention adjusts the frequency and/or spatial resolution of measurements when one or more events occur that are likely to indicate an internal or external change affecting the manufacturing process or results. The increase in measurements and possible corresponding decrease in processing occur on an as-needed basis. The dynamic metrology plan adjusts the spatial resolution of sampling within-wafer by adding, subtracting or replacing candidate points from the sampling plan, in response to certain events which suggest that additional or different measurements of the wafer may be desirable. Where there are provided a number of candidate points in the die map in the area to which points are to be added, substracted, or replaced, the system can select among the points. Further, the invention may be used in connection with adjusting the frequency of wafer-to-wafer measurements.

公开(公告)号：EP1399295A1

公开(公告)日：2004-03-24

申请号：EP02746548.3

申请日：2002-06-17

申请人： Applied Materials, Inc.

发明人： PAIK, Young, Joseph

IPC分类号： B24B37/04 ,  B24B49/18 ,  B24B53/007

CPC分类号： B24B37/013 ,  B24B37/042 ,  B24B49/03 ,  B24B49/18 ,  B24B53/017 ,  G05B19/00 ,  G05B19/19 ,  G05B19/41865 ,  G05B2219/32053 ,  G05B2219/32065 ,  G05B2219/45031 ,  H01L21/31053 ,  H01L21/67253 ,  H01L21/67276 ,  H01L22/20 ,  Y02P80/40 ,  Y02P90/20

摘要： A method, apparatus and medium of conditioning a planarizing surface includes installing a wafer to be polished in a chemical mechanical polishing (CMP) apparatus (100) having a polishing pad (1080) and a conditioning disk (1030), polishing the wafer under a first set of pad conditioning parameters selected to maintain wafer material removal rates with preselected minimum and maximum removal rates, determining a wafer material removal rate occurring during the polishing step, calculating update pad conditioning parameters to maintain wafer material removal rates within the maximum and minimum removal rates, and conditioning the polishing pad (1080) using the update pad conditioning parameters, wherein the update pad conditioning parameters are calculated using a pad wear and conditioning model that predicts the wafer material removal rate of the polishing pad based upon conditioning parameters, such as the conditioning down force and rotational speed of the conditioning disk.