公开(公告)号：EP2033218A1

公开(公告)日：2009-03-11

申请号：EP07783395.2

申请日：2007-05-07

申请人： Applied Materials, Inc.

发明人： NOURI, Faran ,  KIM, Eun-Ha ,  THIRUPAPULIYUR, Sunderraj ,  PARIHAR, Vijay

IPC分类号： H01L21/8238

CPC分类号： H01L29/665 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/823814 ,  H01L21/823835 ,  H01L29/6659 ,  H01L29/7833

摘要： Methods for reducing contact resistance in semiconductor devices are provided in the present invention. In one embodiment, the method includes providing a substrate having semiconductor device formed thereon, wherein the device has source and drain regions and a gate structure formed therein, performing a silicidation process on the substrate by a thermal annealing process, and performing a laser anneal process on the substrate. In another embodiment, the method includes providing a substrate having implanted dopants, performing a silicidation process on the substrate by a thermal annealing process, and activating the dopants by a laser anneal process.