公开(公告)号：EP1949420A2

公开(公告)日：2008-07-30

申请号：EP06839718.1

申请日：2006-11-03

申请人： Atmel Corporation

发明人： ENICKS, Darwin, G. ,  CHAFFEE, John, T. ,  CARVER, Damian, A.

IPC分类号： H01L21/20

CPC分类号： H01L29/7842 ,  H01L29/66242

摘要： A method for pseudomorphic growth and integration of an in-situ doped, strain-compensated metastable compound base (107) into an electronic device (100), such as, for example, a SiGe NPN HBT, by substitutional placement of strain-compensating atomic species. The invention also applies to strained layers in other electronic devices such as strained SiGe, Si in MOS applications, vertical thin film transistors (VTFT), and a variety of other electronic device types. Devices formed from compound semiconductors other than SiGe, such as, for example, GaAs, InP, and AlGaAs are also amenable to beneficial processes described herein.