公开(公告)号：EP1568075A2

公开(公告)日：2005-08-31

申请号：EP03768711.8

申请日：2003-11-05

申请人： Aviza Technology, Inc.

发明人： SENZAKI, Yoshihide ,  BERCAW, Craig ,  CHATHAM III, Robert, Hood ,  HIGUCHI, Randall ,  LOPATA, Eugene, S.

IPC分类号： H01L21/336 ,  C23C16/00

CPC分类号： H01L21/3143 ,  H01L21/3141 ,  H01L21/3142 ,  H01L21/31612 ,  H01L21/31645

摘要： A method of making high-k dielectrics is provided. The method comprises providing a substrate having a high-k dielectric layer deposited thereon in a process chamber and introducing a nitrogen containing gas into the process chamber to incorporate nitrogen into the high-k dielectric layer. In one embodiment, the nitrogen containing gas is a nitrogen plasma gas from a source disposed outside the process chamber. The nitrogen plasma gas is introduced into the process chamber at a flow rate from 0 to about 5000 sccm over a time period of about 20 to 1800 seconds. In another embodiment, the process chamber is maintained at a pressure of about 1 to 100 Torr, and at a wafer temperature in the range of about 200°C-700°C. The high-k dielectric film pre-deposited on the substrate can be formed by atomic layer deposition, chemical vapor deposition (CVD), physical vapor deposition (PVD), jet vapor deposition (JVD), aerosol pyrolysis, and spin-coating.