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公开(公告)号：EP1540034A2
公开(公告)日：2005-06-15
申请号：EP03761313.0
申请日：2003-06-23
IPC分类号： C23C16/48
CPC分类号： H01L21/3141 , C23C16/45536 , C23C16/45542 , C23C16/482 , H01L21/31645
摘要： A method for energy-assisted atomic layer deposition and removal of a dielectric film are provided. In one embodiment a substrate (14) is placed into a reaction chamber (10) and a gaseous precursor is introduced into the reaction chamber (10). Energy is provide by a pulse of electromagnetic radiation which forms radical species of the gaseous precursor. The radical species react with the surface of the substrate (14) to form a radical terminated surface on the substrate (14). The reaction chamber (10) is purged and a second gaseous precursor is introduced. A second electromagnetic radiation pulse is initiated and forms second radical species. The second radical species of the second gas react with the surface to form a film on the substrate (14). Alternately, the gaseous species can be chosen to produce radicals that result in the removal of material from the surface of the substrate (14).
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公开(公告)号：EP1535320A2
公开(公告)日：2005-06-01
申请号：EP03788581.1
申请日：2003-08-18
发明人： LEE, Sang-In , SENZAKI, Yoshihide , LEE, Sang-Kyoo
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/3141 , C23C16/401 , C23C16/45531 , H01L21/31612 , H01L21/31645
摘要： The present invention relates to the atomic layer deposition ('ALD') of high k dielectric layers of metal silicates, including hafnium silicate. More particularly, the present invention relates to the ALD formation of metal silicates using metal organic precursors, silicon organic precursors and ozone. Preferably, the metal organic precursor is a metal alkyl amide and the silicon organic precursor is a silicon alkyl amide.
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3.发明公开SYSTEM AND METHOD FOR FORMING MULTI-COMPONENT DIELECTRIC FILMS 审中-公开VERFAHREN ZUR HERSTELLUNG DIELEKTRISCHER MEHRKOMPONENTENFILME系统
公开(公告)号：EP1756328A2
公开(公告)日：2007-02-28
申请号：EP05763357.0
申请日：2005-06-15
发明人： SENZAKI, Yoshihide
CPC分类号： C23C16/029 , C23C16/308 , C23C16/34 , C23C16/401 , C23C16/45525 , C23C16/45529 , C23C16/45531 , C23C16/45546 , H01L21/02148 , H01L21/022 , H01L21/0228
摘要： The present invention provides systems and methods for mixing precursors such that a mixture of precursors are present together in a chamber during a single pulse step in an atomic layer deposition (ALD) process to form a multi-component film. The precursors are comprised of at least one different chemical component, and such different components will form a mono-layer to produce a multi-component film. In a further aspect of the present invention, a dielectric film having a composition gradient is provided.
摘要翻译： 本发明提供用于混合前体的系统和方法，使得在原子层沉积（ALD）工艺中的单个脉冲步骤期间，前体的混合物在腔室中一起存在，以形成多组分膜。 前体由至少一种不同的化学组分组成，并且这样的不同组分将形成单层以产生多组分膜。 在本发明的另一方面，提供了具有组成梯度的电介质膜。
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公开(公告)号：EP1568075A2
公开(公告)日：2005-08-31
申请号：EP03768711.8
申请日：2003-11-05
发明人： SENZAKI, Yoshihide , BERCAW, Craig , CHATHAM III, Robert, Hood , HIGUCHI, Randall , LOPATA, Eugene, S.
IPC分类号： H01L21/336 , C23C16/00
CPC分类号： H01L21/3143 , H01L21/3141 , H01L21/3142 , H01L21/31612 , H01L21/31645
摘要： A method of making high-k dielectrics is provided. The method comprises providing a substrate having a high-k dielectric layer deposited thereon in a process chamber and introducing a nitrogen containing gas into the process chamber to incorporate nitrogen into the high-k dielectric layer. In one embodiment, the nitrogen containing gas is a nitrogen plasma gas from a source disposed outside the process chamber. The nitrogen plasma gas is introduced into the process chamber at a flow rate from 0 to about 5000 sccm over a time period of about 20 to 1800 seconds. In another embodiment, the process chamber is maintained at a pressure of about 1 to 100 Torr, and at a wafer temperature in the range of about 200°C-700°C. The high-k dielectric film pre-deposited on the substrate can be formed by atomic layer deposition, chemical vapor deposition (CVD), physical vapor deposition (PVD), jet vapor deposition (JVD), aerosol pyrolysis, and spin-coating.
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公开(公告)号：EP1554128A1
公开(公告)日：2005-07-20
申请号：EP03728783.6
申请日：2003-05-08
CPC分类号： B08B7/00 , C23C16/4405
摘要： A cost-effective and environmentally benign cleaning method is provided which comprises introducing an etch gas into the chamber (14), performing a first cleaning process to remove the deposited materials at a high rate, and performing a second cleaning process to remove the deposited materials at a high etch selectivity with respect to the materials forming the chamber. The first cleaning process is performed at a first pressure is substantially lower than the first pressure to enhance the etching selectivity.
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公开(公告)号：EP1714315A2
公开(公告)日：2006-10-25
申请号：EP04811547.1
申请日：2004-11-17
发明人： SENZAKI, Yoshihide
IPC分类号： H01L21/4763
CPC分类号： C23C16/45531 , C23C16/029 , C23C16/308 , C23C16/401 , H01L21/3141 , H01L21/3142 , H01L21/3143 , H01L21/3145 , H01L21/31608 , H01L21/31612 , H01L21/31645
摘要： The present invention promotes incorporation of nitrogen (e.g., nitridation) into high-k dielectric films using a low temperature process. Further, the present invention provides an in-situ method; that is formation of the high-k dielectric film and nitridation of the film are carried out in the same process chamber during deposition of the film, as opposed to the conventional post processing techniques. In another aspect, a method for depositing a multi-layer material for use as a gate dielectric layer in semiconductor devices is provided.
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公开(公告)号：EP1678353A2
公开(公告)日：2006-07-12
申请号：EP04789439.9
申请日：2004-09-30
IPC分类号： C30B25/00
CPC分类号： C23C16/45525 , C23C16/0272 , C23C16/401 , C23C16/405 , C23C16/42 , C23C16/45553 , C30B25/165 , C30B29/16 , H01L21/3141 , H01L21/31645
摘要： A method of depositing a hafnium-based dielectric film is provided. The method comprises atomic layer deposition using ozone and one or more reactants comprising a hafnium precursor. A semiconductor device is also provided. The device comprises a substrate, a hafnium-based dielectric layer formed atop the substrate, and an interfacial layer formed between the substrate and the hafnium-based dielectric layer, wherein the interfacial layer comprises silicon dioxide and has a crystalline structure.
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公开(公告)号：EP1668682A2
公开(公告)日：2006-06-14
申请号：EP04789414.2
申请日：2004-09-30
IPC分类号： H01L21/31
CPC分类号： C23C16/45527 , C23C16/403 , C23C16/405 , C23C16/45529 , C23C16/45531 , H01L21/02178 , H01L21/02181 , H01L21/0228 , H01L21/02337 , H01L21/3141 , H01L21/3162 , H01L21/31645
摘要： In general, the present invention provides a method of depositing high -k dielectric films or layers, such as but not limited to high-k gate dielectric films. In one embodiment, atomic layer deposition (ALD) cycles are carried out where ozone is selectively conveyed to a chamber in separate cycles to form a metal oxide layer on the surface of a substrate where the metal oxide layer has an interfacial oxide layer of minimal thickness.
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公开(公告)号：EP1682692A2
公开(公告)日：2006-07-26
申请号：EP04796762.5
申请日：2004-10-29
IPC分类号： C23C16/34
CPC分类号： C23C16/345 , C07F7/025
摘要： A novel class of volatile liquid precursors based on amino substituted disilane compounds is used to form silicon nitride dielectric materials on the surface of substrates. This class of precursors overcomes the issues of high deposition temperatures and the formation of undesirable by-products that are inherent in the present art. In another aspect, methods of depositing silicon nitride films on substrates are provided.
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公开(公告)号：EP1616042A2
公开(公告)日：2006-01-18
申请号：EP04750402.2
申请日：2004-04-21
IPC分类号： C23C16/00
CPC分类号： C23C16/45531 , C23C16/029 , C23C16/308 , C23C16/401 , H01L21/3141 , H01L21/3142 , H01L21/3143 , H01L21/3145 , H01L21/31608 , H01L21/31612 , H01L21/31645
摘要： The present invention provides systems and methods for mixing vaporized precursors such that a mixture of vaporized precursors are present together in a chamber (102) during a single pulse step in an atomic layer deposition (ALD) process to form a multi-component film. The vaporized precursors are comprised of at least two different chemical components, and such different components will form a monolayer to produce a multi-component film. In a further aspect of the invention, a dielectric film having a composition gradient is provided.
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