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1.发明授权THIOCYANATO SUBSTITUTED NAPHTHALENE DIIMIDE COMPOUNDS AND THEIR USE AS N-TYPE SEMICONDUCTORS 有权硫代酰胺取代的萘二酰亚胺化合物及其作为N型半导体的用途
公开(公告)号：EP2683718B1
公开(公告)日：2017-05-24
申请号：EP12733976.0
申请日：2012-01-10
Applicant: BASF SE
Inventor： GEßNER, Thomas , REICHELT, Helmut , LANGER, Nicolle , SCHWIND, Anke
CPC classification number: H01L51/0072 , C07D471/06 , C09B5/62 , C09B57/08 , H01L51/0053 , H01L51/0558 , Y02E10/549
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2.发明公开
公开(公告)号：EP2683718A1
公开(公告)日：2014-01-15
申请号：EP12733976.0
申请日：2012-01-10
Applicant: BASF SE
Inventor： GEßNER, Thomas , REICHELT, Helmut , LANGER, Nicolle , SCHWIND, Anke
IPC: C07D471/06 , H01L51/30 , H01L51/54
CPC classification number: H01L51/0072 , C07D471/06 , C09B5/62 , C09B57/08 , H01L51/0053 , H01L51/0558 , Y02E10/549
Abstract: Disclosed are thiocyanato or isothiocyanato substituted naphthalene diimide and rylene diimide compounds according to formula (I), use of these compounds as n-type semiconductors, methods of preparing these compounds, as well as various compositions, composites, and devices that incorporate these compounds.
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