公开(公告)号：EP3254315A1

公开(公告)日：2017-12-13

申请号：EP16702140.1

申请日：2016-02-01

申请人： BASF SE ,  National University of Singapore

发明人： HO, Peter K.-H. ,  CHUA, Lay-Lay ,  RUI-QI, Png ,  SEAH, Wei-Ling ,  ZHOU, Mi

IPC分类号： H01L51/10

CPC分类号： H01L51/105 ,  H01L51/002 ,  H01L51/0036 ,  H01L51/0037 ,  H01L51/004 ,  H01L51/0043 ,  H01L51/009 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0558

摘要： This invention provides a transistor device structure that in-corporates a self-aligned doped contact formed by inserting a molecularly-thin layer of bonded anions between the semiconductor and the source-drain electrode array wherein the semiconductor is p-doped at the interface with the bonded-anion layer, and a method of making this structure using oxidant species incorporated into the molecularly-thin layer. The device shows ohmic hole injection and hole extraction at the contacts to give high-performance transistor characteristics with low contact resistance.