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    EMBEDDED TOUCH SCREEN AND DISPLAY DEVICE
    2.
    发明公开
    EMBEDDED TOUCH SCREEN AND DISPLAY DEVICE 审中-公开
    嵌入式触摸屏和显示设备

    公开(公告)号：EP3316099A1

    公开(公告)日：2018-05-02

    申请号：EP15890161.1

    申请日：2015-10-18

    申请人： BOE Technology Group Co., Ltd. ,  Beijing BOE Optoelectronics Technology Co., Ltd.

    发明人： LI, Changfeng ,  DONG, Xue ,  WANG, Haisheng ,  CHEN, Xiaochuan ,  WANG, Lei ,  LIU, Yingming ,  YANG, Shengji ,  DING, Xiaoliang ,  ZHAO, Weijie ,  LIU, Wei ,  LIU, Hongjuan ,  LIU, Jiantao ,  XU, Rui

    IPC分类号： G06F3/044

    CPC分类号： G06F3/0412 ,  G02F1/13338 ,  G02F1/136286 ,  G02F2001/13606 ,  G02F2001/136231 ,  G02F2201/40 ,  G06F3/044 ,  G06F2203/04103 ,  G06F2203/04111

    摘要： An in-cell touch panel and a display device are disclosed, in the in-cell touch panel, each of the self-capacitance electrodes (3) includes a plurality of self-capacitance sub-electrodes (31) which are insulated from each other and connecting lines (321, 322) for connecting the self-capacitance sub-electrodes; an orthographic projection on the first substrate (100) of each self-capacitance sub-electrode (31) does not overlap with an orthographic projection on the first substrate (100) of each gate line (1); and/or an orthographic projection on the first substrate (100) of each self-capacitance sub-electrode (31) does not overlap with an orthographic projection on the first substrate (100) of each data line (2). Thus, there is almost no overlapping area between the self-capacitance electrodes and the gate lines and/or there is almost no overlapping area between the self-capacitance electrodes and the data lines, thus there is almost no overlapping capacitance, and therefore the load of the self-capacitance electrode can be obviously reduced, and the power consumption of the in-cell touch panel can be reduced, which is especially appropriate for the in-cell touch panel of large size.

    摘要翻译： 一种内嵌式触摸面板和显示装置被公开，在内嵌式触摸面板中，每个自电容电极（3）包括多个自电容子电极（31），它们彼此绝缘 和用于连接自电容子电极的连接线（321,322） 每个自电容子电极（31）的第一衬底（100）上的正交投影与每个栅极线（1）的第一衬底（100）上的正交投影不重叠; 和/或每个自电容副电极（31）的第一衬底（100）上的正投影不与每个数据线（2）的第一衬底（100）上的正投影重叠。 因此，存在自电容电极和栅极线和/或有自电容电极和数据线之间几乎没有重叠区域之间几乎没有重叠区域，从而几乎不存在重叠电容，因此，负载 可以明显减小自电容电极的尺寸，并且可以降低内嵌式触摸屏的功耗，特别适合大尺寸的内嵌式触摸屏。

    ARRAY SUBSTRATE AND MANUFACTURING METHOD AND DRIVING METHOD THEREFOR, AND DISPLAY DEVICE
    3.
    发明公开
    ARRAY SUBSTRATE AND MANUFACTURING METHOD AND DRIVING METHOD THEREFOR, AND DISPLAY DEVICE 审中-公开
    阵列基板及其制造方法及其驱动方法及显示装置

    公开(公告)号：EP3255530A1

    公开(公告)日：2017-12-13

    申请号：EP15839116.9

    申请日：2015-09-18

    申请人： BOE Technology Group Co., Ltd. ,  Beijing BOE Optoelectronics Technology Co., Ltd.

    发明人： LIU, Yingming ,  DONG, Xue ,  WANG, Haisheng ,  CHEN, Xiaochuan ,  DING, Xiaoliang ,  YANG, Shengji ,  ZHAO, Weijie ,  LIU, Hongjuan ,  LI, Changfeng ,  LIU, Wei

    IPC分类号： G06F3/041

    摘要： An array substrate, manufacturing and driving methods thereof, and a display device are disclosed. The array substrate (100) includes a base substrate (110) and a plurality of gate lines (180) and a plurality of data lines (190) disposed on the base substrate (110). A plurality of pixel units (089) distributed in an array are defined by the gate lines (180) and the data lines (190); each pixel unit (089) includes a common electrode (140), a pixel electrode (170) and a thin-film transistor (TFT) (120); a first insulating layer (150) is disposed on one side of a layer provided with the common electrodes (140) away from the base substrate (110); and a plurality of self-capacitance electrodes (160) are disposed on one side of the first insulating layer (150) away from the base substrate (110). Compared with an array substrate adopting mutual-capacitance technology, the array substrate (100) has less manufacturing processes and high signal-to-noise ratio (SNR).

    摘要翻译： 公开了阵列基板，其制造及其驱动方法，以及显示装置。 阵列基板（100）包括基础基板（110）和设置在基础基板（110）上的多条栅极线（180）和多条数据线（190）。 栅极线（180）和数据线（190）定义了分布在阵列中的多个像素单元（089）; 每个像素单元（089）包括公共电极（140），像素电极（170）和薄膜晶体管（TFT）（120）。 第一绝缘层（150）设置在远离基础衬底（110）设置有公共电极（140）的层的一侧; 并且多个自电容电极（160）设置在第一绝缘层（150）的远离基础衬底（110）的一侧上。 与采用互电容技术的阵列基板相比，阵列基板（100）制造工艺少，信噪比（SNR）高。