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    THIN FILM TRANSISTOR, PREPARATION METHOD THEREFOR, DISPLAY DEVICE AND ELECTRONIC PRODUCT
    2.
    发明公开
    THIN FILM TRANSISTOR, PREPARATION METHOD THEREFOR, DISPLAY DEVICE AND ELECTRONIC PRODUCT 审中-公开
    DÜNNSCHICHTTRANSISTOR，HERSTELLUNGSVERFAHRENDAFÜR，ANZEIGEVORRICHTUNG UND ELEKTRONISCHES PRODUKT

    公开(公告)号：EP3091579A1

    公开(公告)日：2016-11-09

    申请号：EP14859315.5

    申请日：2014-04-16

    申请人： BOE Technology Group Co., Ltd. ,  Chongqing Boe Optoelectronics Co. Ltd.

    发明人： CHUNG, Jaemoon ,  CHOI, Inchul ,  CUI, Xinghua

    IPC分类号： H01L29/786 ,  H01L21/336

    摘要： A thin film transistor (TFT) according to the present disclosure may include an active layer, an etch stop layer (ESL), a source electrode and a drain electrode. The active layer may include at least one first active portion, a second active portion and a third active portion located on both sides of the first active portion and connected to the first active portion. The at least one first active portion may be overlaid by the ESL, and a longitudinal width of the at least one first active portion may be less than those/that of the second active portion and/or the third active portion. The second active portion and the third active portion may be overlaid by a horizontally-extending portion of the ESL on the first active portion. A side wing contact may be formed between the second active portion and one electrode of the source electrode and the drain electrode, and/or a side wing contact may be formed between the third active portion and the other electrode of the source electrode and the drain electrode.

    摘要翻译： 根据本公开的薄膜晶体管（TFT）可以包括有源层，蚀刻停止层（ESL），源电极和漏电极。 有源层可以包括至少一个第一有源部分，第二有源部分和位于第一有源部分两侧并连接到第一有源部分的第三有源部分。 至少一个第一有效部分可以被ESL覆盖，并且至少一个第一有效部分的纵向宽度可以小于第二有效部分和/或第三有效部分的纵向宽度。 第二活动部分和第三活动部分可以由第一活动部分上的ESL的水平延伸部分重叠。 可以在第二有源部分和源电极和漏电极的一个电极之间形成侧翼接触，和/或侧翼接触可以形成在源电极和漏极之间的第三有源部分和另一个电极之间 电极。