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    THIN FILM TRANSISTOR, PREPARATION METHOD THEREFOR, DISPLAY DEVICE AND ELECTRONIC PRODUCT
    1.
    发明公开
    THIN FILM TRANSISTOR, PREPARATION METHOD THEREFOR, DISPLAY DEVICE AND ELECTRONIC PRODUCT 审中-公开
    DÜNNSCHICHTRTRANSISTOR，HERSTELLUNGSVERFAHRENDAFÜR，ANZEIGEVORRICHTUNG UND ELEKTRONISCHES PRODUKT

    公开(公告)号：EP3091579A4

    公开(公告)日：2017-09-06

    申请号：EP14859315

    申请日：2014-04-16

    申请人： BOE TECHNOLOGY GROUP CO LTD ,  CHONGQING BOE OPTOELECTRONICS CO LTD

    发明人： CHUNG JAEMOON ,  CHOI INCHUL ,  CUI XINGHUA

    IPC分类号： H01L29/786 ,  H01L29/417 ,  H01L29/66

    CPC分类号： H01L29/7869 ,  H01L27/1214 ,  H01L29/1033 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78696

    摘要： A thin film transistor (TFT) according to the present disclosure may include an active layer, an etch stop layer (ESL), a source electrode and a drain electrode. The active layer may include at least one first active portion, a second active portion and a third active portion located on both sides of the first active portion and connected to the first active portion. The at least one first active portion may be overlaid by the ESL, and a longitudinal width of the at least one first active portion may be less than those/that of the second active portion and/or the third active portion. The second active portion and the third active portion may be overlaid by a horizontally-extending portion of the ESL on the first active portion. A side wing contact may be formed between the second active portion and one electrode of the source electrode and the drain electrode, and/or a side wing contact may be formed between the third active portion and the other electrode of the source electrode and the drain electrode.

    摘要翻译： 根据本公开的薄膜晶体管（TFT）可以包括有源层，蚀刻停止层（ESL），源电极和漏电极。 有源层可以包括位于第一有源部分的两侧并连接到第一有源部分的至少一个第一有源部分，第二有源部分和第三有源部分。 所述至少一个第一有源部分可以被ESL覆盖，并且所述至少一个第一有源部分的纵向宽度可以小于第二有源部分和/或第三有源部分的纵向宽度。 第二有源部分和第三有源部分可以在第一有源部分上由ESL的水平延伸部分覆盖。 可以在第二有源部分与源电极和漏电极的一个电极之间形成侧翼接触，和/或可以在源电极的第三有源部分和另一个电极与漏极之间形成侧翼接触 电极。

    THIN FILM TRANSISTOR, PREPARATION METHOD THEREFOR, DISPLAY DEVICE AND ELECTRONIC PRODUCT
    4.
    发明公开
    THIN FILM TRANSISTOR, PREPARATION METHOD THEREFOR, DISPLAY DEVICE AND ELECTRONIC PRODUCT 审中-公开
    DÜNNSCHICHTTRANSISTOR，HERSTELLUNGSVERFAHRENDAFÜR，ANZEIGEVORRICHTUNG UND ELEKTRONISCHES PRODUKT

    公开(公告)号：EP3091579A1

    公开(公告)日：2016-11-09

    申请号：EP14859315.5

    申请日：2014-04-16

    申请人： BOE Technology Group Co., Ltd. ,  Chongqing Boe Optoelectronics Co. Ltd.

    发明人： CHUNG, Jaemoon ,  CHOI, Inchul ,  CUI, Xinghua

    IPC分类号： H01L29/786 ,  H01L21/336

    摘要： A thin film transistor (TFT) according to the present disclosure may include an active layer, an etch stop layer (ESL), a source electrode and a drain electrode. The active layer may include at least one first active portion, a second active portion and a third active portion located on both sides of the first active portion and connected to the first active portion. The at least one first active portion may be overlaid by the ESL, and a longitudinal width of the at least one first active portion may be less than those/that of the second active portion and/or the third active portion. The second active portion and the third active portion may be overlaid by a horizontally-extending portion of the ESL on the first active portion. A side wing contact may be formed between the second active portion and one electrode of the source electrode and the drain electrode, and/or a side wing contact may be formed between the third active portion and the other electrode of the source electrode and the drain electrode.

    摘要翻译： 根据本公开的薄膜晶体管（TFT）可以包括有源层，蚀刻停止层（ESL），源电极和漏电极。 有源层可以包括至少一个第一有源部分，第二有源部分和位于第一有源部分两侧并连接到第一有源部分的第三有源部分。 至少一个第一有效部分可以被ESL覆盖，并且至少一个第一有效部分的纵向宽度可以小于第二有效部分和/或第三有效部分的纵向宽度。 第二活动部分和第三活动部分可以由第一活动部分上的ESL的水平延伸部分重叠。 可以在第二有源部分和源电极和漏电极的一个电极之间形成侧翼接触，和/或侧翼接触可以形成在源电极和漏极之间的第三有源部分和另一个电极之间 电极。

    THIN FILM TRANSISTOR DEVICE, MANUFACTURING METHOD THEREOF, AND DISPLAY APPARATUS
    5.
    发明公开
    THIN FILM TRANSISTOR DEVICE, MANUFACTURING METHOD THEREOF, AND DISPLAY APPARATUS 审中-公开
    薄膜晶体管器件，其制造方法和显示装置

    公开(公告)号：EP3227913A1

    公开(公告)日：2017-10-11

    申请号：EP15849828.7

    申请日：2015-08-14

    申请人： BOE Technology Group Co., Ltd. ,  Chongqing Boe Optoelectronics Co. Ltd.

    发明人： WANG, Wu ,  QIU, Haijun ,  SHANG, Fei ,  WANG, Guolei

    IPC分类号： H01L21/77 ,  H01L21/336 ,  H01L27/12

    CPC分类号： H01L27/1288 ,  H01L21/0274 ,  H01L21/441 ,  H01L21/47573 ,  H01L21/47635 ,  H01L27/1225 ,  H01L29/41725 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78615 ,  H01L29/78618 ,  H01L29/7869

    摘要： Various embodiments provide a thin film transistor (TFT) device, a manufacturing method of the TFT device, and a display apparatus including the TFT device. An etch stop layer (ESL) material is formed on an active layer on a substrate. An electrical conductive layer material is formed on the ESL material for forming a source electrode and a drain electrode. The electrical conductive layer material is patterned to form a first portion of the source electrode containing a first via-hole through the source electrode, and to form a first portion of the drain electrode containing a second via-hole through the drain electrode. The ESL material is patterned to form an etch stop layer (ESL) pattern including a first ESL via-hole connecting to the first via-hole through the source electrode and including a second ESL via-hole connecting to the second via-hole through the drain electrode.

    摘要翻译： 各种实施例提供薄膜晶体管（TFT）器件，TFT器件的制造方法以及包括该TFT器件的显示装置。 在衬底（1）上的有源层（4）上形成蚀刻停止层（ESL）材料（5）。 在ESL材料（5）上形成导电层材料以形成源电极和漏电极。 导电层材料被图案化以形成包含穿过源电极的第一通孔（91a）的源电极（61）的第一部分，并且形成包含第二通孔（91）的第一部分漏电极 （92a）穿过漏电极。 ESL材料（5）被图案化以形成包括通过源电极连接到第一通孔（91a）并且包括第二ESL通孔（91b）的第一ESL通孔（91b）的蚀刻停止层（ESL） （92b）通过漏电极连接到第二通孔（92a）。