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    METHOD AND SYSTEM FOR INSPECTING INDIRECT BANDGAP SEMICONDUCTOR STRUCTURE
    2.
    发明公开
    METHOD AND SYSTEM FOR INSPECTING INDIRECT BANDGAP SEMICONDUCTOR STRUCTURE 有权
    VERFAHREN UND SYSTEM ZUR INSPEKTION EINER INDIREKTEN BANDGAP-HALBLEITERSTRUKTUR

    公开(公告)号：EP1946079A4

    公开(公告)日：2012-10-24

    申请号：EP06790291

    申请日：2006-10-11

    申请人： BT IMAGING PTY LTD

    发明人： TRUPKE THORSTEN ,  BARDOS ROBERT ANDREW

    IPC分类号： G01N21/64

    CPC分类号： G01N21/6489 ,  F21Y2115/10 ,  G01N21/6456 ,  G01N21/8851 ,  G01N2021/8887 ,  H01L22/14

    摘要： Methods (600) and systems (100) for inspecting an indirect bandgap semiconductor structure (140) are described. A light source (110) generates light (612) suitable for inducing photoluminescence in the indirect bandgap semiconductor structure (140). A short-pass filter unit (114) reduces long-wavelength light of the generated light above a specified emission peak. A collimator (112) collimates (616) the light. A large area of the indirect bandgap semiconductor structure (140) is substantially uniformly and simultaneously illuminated (618) with the collimated, short-pass filtered light. An image capture device (130) captures (620) images of photoluminescence simultaneously induced by the substantially uniform, simultaneous illumination incident across the large area of the indirect bandgap semiconductor structure. The photoluminescence images are imaged processed (622) to quantify spatially resolved specified electronic properties of the indirect bandgap semiconductor structure (140) using the spatial variation of the photoluminescence induced in the large area.

    摘要翻译： 描述了用于检查间接带隙半导体结构（140）的方法（600）和系统（100）。 光源（110）产生适于在间接带隙半导体结构（140）中诱导光致发光的光（612）。 短路滤波器单元（114）将产生的光的长波长光减少到特定发射峰以上。 准直器（112）准直（616）光。 间接带隙半导体结构（140）的大面积与准直的短路滤波光基本均匀并同时被照明（618）。 图像捕获装置（130）捕获（620）由间接带隙半导体结构的大面积上基本上均匀的同时照射入射引起的光致发光图像。 对光致发光图像进行成像处理（622），以使用在大面积中诱导的光致发光的空间变化来定量间接带隙半导体结构（140）的空间分辨的特定电子特性。

    METHOD AND SYSTEM FOR TESTING INDIRECT BANDGAP SEMICONDUCTOR DEVICES USING LUMINESCENCE IMAGING
    4.
    发明公开
    METHOD AND SYSTEM FOR TESTING INDIRECT BANDGAP SEMICONDUCTOR DEVICES USING LUMINESCENCE IMAGING 审中-公开
    方法和系统，用于间接带隙半导体元件测试中使用发光成像

    公开(公告)号：EP2024716A4

    公开(公告)日：2009-05-13

    申请号：EP07718842

    申请日：2007-05-04

    申请人： BT IMAGING PTY LTD

    发明人： TRUPKE THORSTEN ,  BARDOS ROBERT ANDREW

    IPC分类号： G01J1/00 ,  G01N21/00 ,  H01L21/66

    CPC分类号： H02S50/15 ,  G01N21/64 ,  G01N21/6489 ,  G01N21/66 ,  G01N21/9501 ,  G01N21/956 ,  H01L31/022425

    摘要： Embodiments of methods and systems for identifying or determining spatially resolved properties in indirect bandgap semiconductor devices such as solar cells are described. In one embodiment, spatially resolved properties of an indirect bandgap semiconductor device are determined by externally exciting the indirect bandgap semiconductor device to cause the indirect bandgap semiconductor device to emit luminescence (110), capturing images of luminescence emitted from the indirect bandgap semiconductor device in response to the external excitation (120), and determining spatially resolved properties of the indirect bandgap semiconductor device based on a comparison of relative intensities of regions in one or more of the luminescence images (130).

    摘要翻译： 的方法和系统用于鉴定或确定的采矿在间接带隙半导体器件空间分辨性能实施例和：如太阳能电池进行说明。 在一个，实施例空间分辨间接带隙半导体器件的性能通过从外部激发间接带隙半导体器件被确定性开采引起所述间接带隙半导体装置发出发光（110）捕获的发光响应从所述间接带隙半导体装置发射的图像 到外部激励器（120），和确定性采矿空间分辨基于在一个或多个所述发光图像（130）的区域的相对强度的比较所述间接带隙半导体器件的性能。