公开(公告)号：EP4367632A1

公开(公告)日：2024-05-15

申请号：EP22734528.7

申请日：2022-06-03

申请人： ASML Netherlands B.V.

发明人： LIANG, Haoyi ,  CHEN, Yani ,  YANG, Ming-Yang ,  YANG, Yang ,  HUANG, Xiaoxia ,  CHEN, Zhichao ,  YU, Liangjiang ,  WANG, Zhe ,  PU, Lingling

IPC分类号： G06T7/00 ,  H01L21/66

CPC分类号： G06T7/001 ,  G06T2207/3014820130101 ,  G06T2207/1006120130101 ,  H01L22/10

公开(公告)号：EP2258029B1

公开(公告)日：2018-11-07

申请号：EP09726832.0

申请日：2009-03-09

申请人： OSRAM Opto Semiconductors GmbH

发明人： EICHLER, Christoph ,  STRAUSS, Uwe

IPC分类号： H01S5/22

CPC分类号： H01L22/10 ,  H01L22/12 ,  H01S5/22 ,  H01S2301/173

公开(公告)号：EP3221882A4

公开(公告)日：2018-05-02

申请号：EP15897979

申请日：2015-07-14

申请人： GOERTEK INC

发明人： ZOU QUANBO ,  WANG ZHE

IPC分类号： H01L21/60 ,  H01L21/66 ,  H01L21/683

CPC分类号： H01L24/97 ,  H01L21/50 ,  H01L21/6835 ,  H01L22/14 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L25/0753 ,  H01L33/62 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/68354 ,  H01L2221/68381 ,  H01L2224/131 ,  H01L2224/16227 ,  H01L2224/2929 ,  H01L2224/29294 ,  H01L2224/293 ,  H01L2224/2939 ,  H01L2224/32013 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/81121 ,  H01L2224/81143 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/81903 ,  H01L2224/81907 ,  H01L2224/83005 ,  H01L2224/83101 ,  H01L2224/83143 ,  H01L2224/83851 ,  H01L2224/83855 ,  H01L2224/92 ,  H01L2224/9211 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2224/95001 ,  H01L2224/95144 ,  H01L2224/95145 ,  H01L2224/97 ,  H01L2924/12041 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01L2224/11 ,  H01L2924/00014 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2221/68304 ,  H01L21/78 ,  H01L22/10 ,  H01L2224/83104 ,  H01L2924/014

摘要： The present invention discloses a assembling method, a manufacturing method, an device and an electronic apparatus of flip-die. The method for assembling a flip-die, comprises: temporarily bonding the flip-die onto a laser-transparent first substrate, wherein bumps of the flip-die are located on the side of the flip-die opposite to the first substrate; aligning the bumps with pads on a receiving substrate; irradiating the original substrate with laser from the first substrate side to lift-off the flip-die from the first substrate; and attaching the flip-die on the receiving substrate. A faster assembly rate can be achieved by using the present invention. A smaller chip size can be achieved by using the present invention. A lower profile can be achieved by using the present invention.

公开(公告)号：EP3221882A1

公开(公告)日：2017-09-27

申请号：EP15897979.9

申请日：2015-07-14

申请人： Goertek Inc.

发明人： ZOU, Quanbo ,  WANG, Zhe

IPC分类号： H01L21/50

CPC分类号： H01L24/97 ,  H01L21/50 ,  H01L21/6835 ,  H01L22/14 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L25/0753 ,  H01L33/62 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/68354 ,  H01L2221/68381 ,  H01L2224/131 ,  H01L2224/16227 ,  H01L2224/2929 ,  H01L2224/29294 ,  H01L2224/293 ,  H01L2224/2939 ,  H01L2224/32013 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/81011 ,  H01L2224/81121 ,  H01L2224/81143 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/81903 ,  H01L2224/81907 ,  H01L2224/83005 ,  H01L2224/83101 ,  H01L2224/83143 ,  H01L2224/83851 ,  H01L2224/83855 ,  H01L2224/92 ,  H01L2224/9211 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2224/95001 ,  H01L2224/95144 ,  H01L2224/95145 ,  H01L2224/97 ,  H01L2924/12041 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01L2224/11 ,  H01L2924/00014 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2221/68304 ,  H01L21/78 ,  H01L22/10 ,  H01L2224/83104 ,  H01L2924/014

摘要： The present invention discloses a assembling method, a manufacturing method, an device and an electronic apparatus of flip-die. The method for assembling a flip-die, comprises: temporarily bonding the flip-die onto a laser-transparent first substrate, wherein bumps of the flip-die are located on the side of the flip-die opposite to the first substrate; aligning the bumps with pads on a receiving substrate; irradiating the original substrate with laser from the first substrate side to lift-off the flip-die from the first substrate; and attaching the flip-die on the receiving substrate. A faster assembly rate can be achieved by using the present invention. A smaller chip size can be achieved by using the present invention. A lower profile can be achieved by using the present invention.

摘要翻译： 公开了一种倒装芯片的组装方法，制造方法，装置和电子装置。 用于组装翻转模的方法包括：将翻转模（205）暂时接合到激光透明的第一基板（204）上，其中翻转模（205）的凸块（202）位于激光透过的第一基板 与所述第一基板（204）相对的所述翻转模（205）; 将凸块（202）与衬垫（206）对准在接收衬底（207）上; 用激光（208）从所述第一衬底侧照射所述原始衬底以从所述第一衬底（204）剥离所述倒装管芯（205）; 并将翻转模（205）附着在接收基板（207）上。 可以实现更快的组装速度，更小的芯片尺寸和更低的外形。

公开(公告)号：EP2851942A3

公开(公告)日：2015-04-15

申请号：EP14191097.6

申请日：2012-12-05

申请人： Princo Corp.

发明人： Guu, Yeong-yan ,  Shih, Ying-jer

IPC分类号： H01L21/683 ,  H01L23/498 ,  H01L21/48 ,  H01L21/687 ,  H01L21/66 ,  H01L21/56 ,  H01L23/31 ,  H01L21/60 ,  H01L23/485

CPC分类号： H01L22/10 ,  H01L21/4857 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/68728 ,  H01L22/14 ,  H01L22/20 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49822 ,  H01L24/16 ,  H01L24/81 ,  H01L24/97 ,  H01L2221/68345 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/051 ,  H01L2224/05548 ,  H01L2224/056 ,  H01L2224/16227 ,  H01L2224/81005 ,  H01L2224/97 ,  H01L2924/15311 ,  H01L2924/18161 ,  H01L2924/00014 ,  H01L2224/81

摘要： Disclosed is a package method for electronic components by a thin substrate, comprising: providing a carrier (200); forming at least one metal layer (202, 206) and at least one dielectric layer (204) on the carrier for manufacturing the thin substrate, and the thin substrate comprises at least one package unit for connecting at least one chip; forming at least one pad layer (210) on a surface of the thin substrate; parting the thin substrate from the carrier; performing test to the thin substrate to weed out the package unit with defects in the at least one package unit and select the package units for connecting the chips; connecting the chips with the selected package units by flip chip bonding respectively. Accordingly, the yield of the entire package process can be improved and the pointless manufacture material cost can be reduced.

公开(公告)号：EP2372752A1

公开(公告)日：2011-10-05

申请号：EP08879154.6

申请日：2008-12-26

申请人： Y Systems Ltd.

发明人： Yves, Lacroix

IPC分类号： H01L21/205 ,  G01K11/12

CPC分类号： G01K11/125 ,  C23C14/541 ,  C23C16/52 ,  C30B23/002 ,  C30B25/16 ,  H01L21/02521 ,  H01L21/67248 ,  H01L22/10

摘要： Provided is a method and a device for measuring a temperature which can recognize the temperature of a semiconductor layer directly with high precision when the semiconductor layer is formed by deposition. The quantity of laser light transmitted a semiconductor layer is monitored by a photodetector by using laser light having a wavelength λs at which the transmittance of light changes abruptly when the temperature of the semiconductor layer reaches Ts during or after deposition. When heat being given to the semiconductor layer is changed, the quantity of laser light monitored by the photodetector changes abruptly when the temperature of the semiconductor layer reaches Ts at a time A, B or C. Consequently, the fact that the temperature of the semiconductor layer reached Ts at a time A, B or C can be recognized exactly, and an error in temperature information observed by a device for measuring temperature variations can be calibrated, for example.

摘要翻译： 本发明提供一种方法和用于测量能够识别直接在半导体层是通过淀积形成具有高精度的半导体层的温度的温度的装置。 激光反式量mitted的半导体层是通过光检测器通过使用具有激光监控的波长的在其中的光的变化的透射率突然当在沉积期间或之后的半导体层的温度达到TS。 当被给予到半导体层的热变化时，激光光由光电检测突然变化当半导体层的温度在时刻A，B或C.因此，factthat半导体的温度达到TS监视的量 在时刻A，B或C达到的TS层可以准确地被识别，并且在由设备用于测量温度的变化观察到的温度信息的误差可以被校准，例如。

公开(公告)号：EP2354773A1

公开(公告)日：2011-08-10

申请号：EP11153302.2

申请日：2011-02-04

申请人： Samsung LED Co., Ltd.

发明人： Sohn, Jong Rak ,  Park, Il Woo

IPC分类号： G01J1/04

CPC分类号： H01L22/10 ,  G01J1/04 ,  G01J1/0488 ,  G01J3/0251 ,  G01J2001/4252 ,  H01L33/50 ,  H01L2224/48091 ,  H01L2924/00014

摘要： An optical property evaluation apparatus (100) includes: a light conversion filter (151,152) converting light emitted from an LED chip (50) or a bare LED package, which is to be evaluated, into a different wavelength of light, and emitting a specific color of light; and an optical property measurement unit (130,140) receiving the specific color of light emitted from the light conversion filter and measuring the optical properties of the received light.

摘要翻译： 一种光学性能评估设备（100）包括：光转换滤光器（151,152）从到LED芯片（50）或裸LED封装件发射的光转换，所有要被评估的，成不同波长的光，并且发射特定 光的颜色; 和光学性能测量单元（130,140）接收来自所述光转换滤光器发射的光的特定颜色并测量所接收的光的光学特性。

公开(公告)号：EP2059792A4

公开(公告)日：2010-01-27

申请号：EP07784695

申请日：2007-07-27

申请人： BT IMAGING PTY LTD

发明人： TRUPKE THORSTEN ,  BARDOS ROBERT ANDREW ,  WURFEL PETER WILHELM

IPC分类号： G01N21/64 ,  G01N21/31 ,  G01N21/95

CPC分类号： G01N21/6489 ,  G01N21/66 ,  G01N21/9501 ,  G01N2021/6421 ,  G01R31/2648 ,  H01L22/10

公开(公告)号：EP1862790A1

公开(公告)日：2007-12-05

申请号：EP06713025.2

申请日：2006-02-03

申请人： Raytex Corporation

发明人： MORIYA, Kazuo,

IPC分类号： G01N15/02 ,  G01B11/02 ,  G01N21/47 ,  H01L21/66

CPC分类号： G01B11/0608 ,  G01N15/1463 ,  G01N21/8806 ,  G01N2015/1452 ,  H01L22/10

摘要： A defective particle measuring apparatus that irradiates focused laser light on a sample 14, images scattered light from the sample 14, and measures defective particles in the sample 14 based on the image result, includes a position deviation computing portion 31 which, based on an in-plane intensity distribution of scattered light of each defective particle that is imaged, obtains a deviation from a focal point position on an image point side of the scattered light of each defective particle and calculates a position deviation amount in a depth direction of the defective particle corresponding to the deviation from the focal point position, a light intensity correcting portion 32 for correcting the light intensity of the scattered light of the defective particle corresponding to the position deviation amount in the depth direction, and a size determining portion 33 for determining the defective particle size based on the light intensity corrected by the light intensity correcting portion 32. Thus, the size of the defective particles can be determined at a high precision by a simple constitution in a short time, and density distribution of the defective particles can be obtained.

摘要翻译： 一种将聚焦激光照射在样品14上的有缺陷的粒子测量装置，根据图像结果对来自样品14的散射光进行成像，并测量样品14中的有缺陷的颗粒，包括位置偏差运算部31， 对成像的各缺陷粒子的散射光的平面强度分布，求出与各缺陷粒子的散射光的像点侧的焦点位置的偏差，算出缺陷粒子的深度方向的位置偏移量 对应于与焦点位置的偏差的光强度校正部分32，用于校正与深度方向上的位置偏差量相对应的缺陷颗粒的散射光的光强度;以及尺寸确定部分33，用于确定缺陷 基于由光强度校正端口校正的光强度的粒径 因此，可以通过简单的结构在短时间内以高精度确定有缺陷的颗粒的尺寸，并且可以获得缺陷颗粒的密度分布。

公开(公告)号：EP3201942A4

公开(公告)日：2018-06-20

申请号：EP15851269

申请日：2015-10-13

申请人： KLA TENCOR CORP

发明人： SUN MEI ,  JENSEN EARL ,  O'BRIEN KEVIN

IPC分类号： H01L21/66 ,  G01K11/20

CPC分类号： G01J1/429 ,  G01J1/0204 ,  G01J1/0271 ,  G01J1/0407 ,  G01J1/58 ,  G01J5/04 ,  G01J5/0818 ,  G01J5/10 ,  G01K11/20 ,  H01L21/67248 ,  H01L21/67253 ,  H01L22/10

摘要： A measurement wafer device for measuring radiation intensity and temperature includes a wafer assembly including one or more cavities. The measurement wafer device further includes a detector assembly. The detector assembly is disposed within the one or more cavities of the wafer assembly. The detector assembly includes one or more light sensors. The detector assembly is further configured to perform a direct or indirect measurement of the intensity of ultraviolet light incident on a surface of the wafer assembly. The detector assembly is further configured to determine a temperature of one or more portions of the wafer assembly based on one or more characteristics of the one or more light sensors.