专利检索 ap:("BURROUGHS CORP") AND inv:"WONSOWICZ CASIMIR JOHN" 第 1 页

1.

发明公开
DAMPED CHEMICAL VAPOR DEPOSITION OF SMOOTH DOPED FILMS. 失效
标题翻译：蒸化学气相沉淀法SMOOTH掺杂薄膜。

公开(公告)号：EP0129588A4

公开(公告)日：1985-12-12

申请号：EP84900354

申请日：1983-12-14

申请人： BURROUGHS CORP

发明人： WONSOWICZ CASIMIR JOHN

IPC分类号： D01F9/08 , C23C16/24 , C23C16/44 , C23C16/52 , H01L21/18 , H01L21/205 , H01L21/225 , H01L21/3205

CPC分类号： H01L21/32055 , C23C16/24 , C23C16/44 , H01L21/02532 , H01L21/02576 , H01L21/0262

摘要： A method of fabricating a film of in-situ doped polycrystalline silicon having a surface that is free of microscopic hillocks includes the steps of providing a deposition chamber and a wafer therein on which the film is to be fabricated and introducing one gas containing silicon atoms and another gas containing dopant atoms into said chamber with respective flow rates; wherein the respective flow rate are gradually increased in an overdamped fashion over a start-up time interval of at least one minute from zero to respective steady state values while simultaneously the ratio of the respective flow rates is kept within 25% of the ratio of said steady state values.