Error-correcting memory with low storage overhead and fast correction mechanism
    1.
    发明公开
    Error-correcting memory with low storage overhead and fast correction mechanism 失效
    具有低存储和快速校正机制的错误校正存储器

    公开(公告)号:EP0077204A3

    公开(公告)日:1986-02-12

    申请号:EP82305386

    申请日:1982-10-11

    IPC分类号: G06F11/10

    摘要: In the disclosed error-correcting memory, data bits are stored in a plurality of memory arrays. Each of said arrays have their memory cells arranged in rows and colums and, a word of said data bits is read by simultaneously selecting one cell at any one row-column pair in every array of said plurality. Every row of each array of said plurality includes a means for storing at least one code bit computed from the data bits in the corresponding row. A plurality of checking means respectively couple to said plurality of arrays for receiving and checking all of the data bits and code bits in the row in its corresponding array from which said one cell is selected to form said word. And an additional memory array means contains memory cells arranged in rows and columns for storing a parity bit at each row-column pair computed from the word of data bits in said plurality of arrays at the corresponding row-column pair.