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公开(公告)号：EP1979431B1
公开(公告)日：2018-01-10
申请号：EP07717147.8
申请日：2007-01-31
发明人： DYSARD, Jeffrey C/o Legal Department, Cabot Microelectronics Corporation , FEENEY, Paul C/o Legal Department, Cabot Microelectronics Corporation , ANJUR, Sriram C/o Legal Department, Cabot Microelectronics Corporation
CPC分类号： C23F3/06 , C09G1/02 , C09K3/1409 , C09K3/1463 , H01L45/06 , H01L45/144 , H01L45/148 , H01L45/1683
摘要： The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing a substrate comprising a phase change alloy (PCA), such as a germanium-antimony-tellurium (GST) alloy. The composition comprises not more than about 6 percent by weight of a particulate abrasive material in combination with an optional oxidizing agent, at least one chelating agent, and an aqueous carrier therefor. The chelating agent comprises a compound or combination of compounds capable of chelating a phase change alloy or component thereof (e.g., germanium, indium, antimony and/or tellurium species) that is present in the substrate, or chelating a substance that is formed from the PCA during polishing of the substrate with the CMP composition. A CMP method for polishing a phase change alloy-containing substrate utilizing the composition is also disclosed.
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公开(公告)号：EP1979431A1
公开(公告)日：2008-10-15
申请号：EP07717147.8
申请日：2007-01-31
发明人： DYSARD, Jeffrey C/o Legal Department, Cabot Microelectronics Corporation , FEENEY, Paul C/o Legal Department, Cabot Microelectronics Corporation , ANJUR, Sriram C/o Legal Department, Cabot Microelectronics Corporation
IPC分类号： C09K3/14
CPC分类号： C23F3/06 , C09G1/02 , C09K3/1409 , C09K3/1463 , H01L45/06 , H01L45/144 , H01L45/148 , H01L45/1683
摘要： The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing a substrate comprising a phase change alloy (PCA), such as a germanium-antimony-tellurium (GST) alloy. The composition comprises not more than 6% by weight of a particulate abrasive material in combination with an optional oxidizing agent, at least one chelating agent, and an aqueous carrier therefor. The chelating agent comprises a compound or combination of compounds capable of chelating a phase change alloy or component thereof (e.g., germanium, indium, antimony and/or tellurium species) that is present in the substrate, or chelating a substance that is formed from the PCA during polishing of the substrate with the CMP composition. A CMP method for polishing a phase change alloy-containing substrate utilizing the composition is also disclosed.
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