摘要:
The invention relates to a device for measuring the emission of X rays produced by an object or sample exposed to an electron beam. The device comprises at least one subset or electronic column enabling the production and control of an electron beam, and a support enabling the measured object to be positioned.It also comprises means for spectral analysis of the X rays emitted by a sample which is to be studied, and optical means enabling the position of the sample to be controlled in relation to the beam. The energy of the beam thus created and the intensity of the stream of electrons obtained meets the requirements in terms of sensitivity, resolution and precision specified by the manufacturers of semi-conductors. The invention is used, in particular, in the control of the production of integrated circuit wafers.