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公开(公告)号：EP0647001B1
公开(公告)日：1997-07-09
申请号：EP94115373.6
申请日：1994-09-29
CPC分类号： B82Y20/00 , H01S5/34 , H01S5/3403 , H01S5/3404 , H01S5/3407 , H01S5/5009
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2.发明授权Method of manufacturing electron-emitting device, electron source and image-forming apparatus 失效一个电子发射器件，电子源和图像形成装置的制造过程的
公开(公告)号：EP0658924B1
公开(公告)日：2000-07-12
申请号：EP94119959.8
申请日：1994-12-16
发明人： Noma, Takashi, c/o Canon Kabushiki Kaisha , Kato, Seijiro, c/o Canon Kabushiki Kaisha , Kishi, Fumio, c/o Canon Kabushiki Kaisha , Kawade, Hisaaki, c/o Canon Kabushiki Kaisha , Ohnishi, Toshikazu, c/o Canon Kabushiki Kaisha , Nishimura, Michiyo, c/o Canon Kabushiki Kaisha , Uno, Kumiko, c/o Canon Kabushiki Kaisha , Horiguchi, Takahiro, c/o Canon Kabushiki Kaisha , Yamanobe, Masato, c/o Canon Kabushiki Kaisha
CPC分类号： H01J9/027 , H01J2201/3165 , H01J2329/00
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3.发明公开Method of manufacturing electron-emitting device, electron source and image-forming apparatus 失效一个电子发射器件，电子源和图像形成装置的制造过程。
公开(公告)号：EP0658924A1
公开(公告)日：1995-06-21
申请号：EP94119959.8
申请日：1994-12-16
发明人： Noma, Takashi, c/o Canon Kabushiki Kaisha , Kato, Seijiro, c/o Canon Kabushiki Kaisha , Kishi, Fumio, c/o Canon Kabushiki Kaisha , Kawade, Hisaaki, c/o Canon Kabushiki Kaisha , Ohnishi, Toshikazu, c/o Canon Kabushiki Kaisha , Nishimura, Michiyo, c/o Canon Kabushiki Kaisha , Uno, Kumiko, c/o Canon Kabushiki Kaisha , Horiguchi, Takahiro, c/o Canon Kabushiki Kaisha , Yamanobe, Masato, c/o Canon Kabushiki Kaisha
CPC分类号： H01J9/027 , H01J2201/3165 , H01J2329/00
摘要： An electron-emitting device comprising a pair of device electrodes and an electroconductive film including an electron-emitting region is manufactured by a method comprising a process of forming an electroconductive film including steps of forming a pattern on a thin film containing a metal element on the basis of a difference of chemical state, and removing part of the thin film on the basis of the difference of chemical state.
摘要翻译： 一种电子发射器件，包括一对器件电极和导电电影包括电子发射区的由包括在导电片包括在薄膜上载有一个金属元件形成图案的步骤形成的工序的方法制造 化学状态，和化学状态的差异的基础上，该薄膜的去除部分的差的基础。
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4.发明公开Semiconductor optical amplifier having reduced polarization dependence 失效OptischerHalbleiterverstärkermit verringerterPolarisationsabhängigkeit。
公开(公告)号：EP0647001A1
公开(公告)日：1995-04-05
申请号：EP94115373.6
申请日：1994-09-29
CPC分类号： B82Y20/00 , H01S5/34 , H01S5/3403 , H01S5/3404 , H01S5/3407 , H01S5/5009
摘要： A semiconductor optical amplifier comprises a substrate (1) and an active layer (4) constructed as a quantum well structure. The active layer includes a plurality of well layers (14,15) and a plurality of barrier layers (13a,13c) which are alternately layered. The composition of each well layer (14,15) is such that the well layers have different quantum levels. The barrier layers are subjected to biaxial strain to shift the energy band structures so as to eliminate the polarization dependency of optical gain in the active region.
摘要翻译： 半导体光放大器包括衬底（1）和构造为量子阱结构的有源层（4）。 有源层包括交替层叠的多个阱层（14,15）和多个势垒层（13a，13c）。 每个阱层（14,15）的组成使得阱层具有不同的量子水平。 阻挡层经受双轴应变以移动能带结构，以消除有源区中光增益的偏振依赖性。
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