公开(公告)号：EP2686925B1

公开(公告)日：2018-08-22

申请号：EP12757701.3

申请日：2012-03-19

申请人： Finisar Corporation

发明人： JOHNSON, Ralph, H. ,  WADE, Jerome, K.

IPC分类号： H01S5/34 ,  H01S5/183

CPC分类号： H01S5/3407 ,  B82Y20/00 ,  H01S5/0021 ,  H01S5/18311 ,  H01S5/34313 ,  H01S5/3436 ,  H01S5/34366 ,  H01S5/34373

摘要： A method for preparing a VCSEL can use MBE for: growing a first conduction region over a first mirror region; growing an active region over the first conduction region opposite of the first mirror region, including: (a) growing a quantum well barrier having In1-xGaxP(As); (b) growing an transitional layer having one or more of GaP, GaAsP, or GaAs; (c) growing a quantum well layer having In1-zGazAsyP1-y; (d) growing another transitional layer have one or more of GaP, GaAsP, or GaAs; (e) repeating processes (a) through (d) over a plurality of cycles; and (f) growing a quantum well barrier having In1-xGaxP(As); growing a second conduction region over the active region opposite of the first conduction region, wherein: x ranges from 0.77 to 0.50; y ranges from 0.7 to 1; and z ranges from 0.7 to 0.99.

公开(公告)号：EP2639900B1

公开(公告)日：2018-06-20

申请号：EP13158839.4

申请日：2013-03-12

申请人： Ricoh Company, Ltd.

发明人： Hara, Kei

IPC分类号： H01S5/183 ,  H01S5/32 ,  H01S5/04 ,  H01S5/14 ,  H01S5/343 ,  H01S5/20 ,  H01S5/34

CPC分类号： H01S5/343 ,  H01S5/041 ,  H01S5/14 ,  H01S5/18358 ,  H01S5/18383 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/3406 ,  H01S5/3407 ,  H01S5/34313 ,  H01S5/34326 ,  H01S5/3434 ,  H01S5/34373

摘要： A semiconductor stack includes a semiconductor DBR (Distributed Bragg Reflector) formed on a substrate, and a resonator formed on the semiconductor DBR laminating wide-band semiconductor layers and active layers alternately. Each of the active layers includes MQWs (Multiple Quantum Wells) and two spacer layers formed one on each surface of the MQWs. The MQWs are formed by laminating barrier layers and quantum well layers alternately. There are n layers of the wide-band semiconductor layer formed, and a band gap Eg m of an m-th wide-band semiconductor layer counting from the substrate and a band gap Eg m-1 of an m-1-th wide-band semiconductor layer counting from the substrate satisfy Eg m-1

公开(公告)号：EP2299549B1

公开(公告)日：2018-04-04

申请号：EP10178248.0

申请日：2010-09-22

申请人： Palo Alto Research Center Incorporated

发明人： Strittmatter, Andre ,  Chua, Christopher L. ,  Kiesel, Peter ,  Johnson, Noble M.

IPC分类号： H01S5/04 ,  H01S5/343 ,  H01S5/183 ,  H01S3/109

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S3/109 ,  H01S5/041 ,  H01S5/18347 ,  H01S5/1835 ,  H01S5/18369 ,  H01S5/18383 ,  H01S5/3407 ,  H01S2301/14

摘要： A semiconductor light emitting device includes a pump light source (12), a gain structure (16), and an out-coupling mirror (20). The gain structure is comprised of InGaN layers (22) that have resonant excitation absorption at the pump wavelength. Light from the pump light source causes the gain structure to emit light, which is reflected by the out-coupling mirror back to the gain structure. A distributed non-epitaxial Bragg reflector (32) causes internal reflection within the gain structure. The out-coupling mirror permits light having sufficient energy to pass therethrough for use external to the device. A frequency doubling structure (18) may be disposed between the gain structure and the out-coupling mirror. Output wavelengths in the deep-UV spectrum may be achieved.

公开(公告)号：EP2340589B1

公开(公告)日：2018-03-14

申请号：EP09822404.1

申请日：2009-10-07

申请人： The Government of the United States of America as represented by the Secretary of the Navy

发明人： VURGAFTMAN, Igor ,  MEYER, Jerry, R. ,  KIM, Mijin ,  BEWLEY, William, W. ,  KIM, Chul-Soo ,  LINDLE, James, R. ,  CANEDY, Chadwick, L.

IPC分类号： H01S5/34

CPC分类号： B82Y20/00 ,  H01S5/3077 ,  H01S5/3401 ,  H01S5/3407 ,  H01S5/3416 ,  H01S5/3422 ,  H01S5/34306

摘要： A type II interband cascade gain medium including a thick and indium-rich GaInSb hole well, two or more GaSb hole wells, electron and hole injectors are separated by a thick AISb barrier, the thickness of the firs InAs electron well in the electron injector, as well as the total thickness of the electron injector and the number of cascaded stages is reduced, transition regions are inserted at the interfaces between the various regions of the gain medium, thick separate confinement layers comprising Ga(InAIAs)Sb are disposed between the active gain region and the cladding, and the doping profile of the cladding layers is optimized to minimize the overlap of the optical mode with the most heavily-doped portion of the InAs/AISb SL cladding layers.

公开(公告)号：EP2276125B1

公开(公告)日：2017-08-23

申请号：EP10182174.2

申请日：2001-07-06

申请人： Nichia Corporation

发明人： Kozaki, Tokuya

IPC分类号： H01S5/343 ,  H01L33/00 ,  H01L33/32

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/24 ,  H01S5/18308 ,  H01S5/18369 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3086 ,  H01S5/3407 ,  H01S5/3415 ,  H01S5/343 ,  H01S5/34333 ,  H01S2304/12

公开(公告)号：EP2511995B1

公开(公告)日：2016-01-20

申请号：EP12167206.7

申请日：2009-10-07

申请人： The Government of the U.S.A., as represented by The Secretary of the Navy

发明人： Vurgaftman, Igor ,  Meyer, Jerry R. ,  Kim, Mijin ,  Bewley, William W. ,  Kim, Chul-soo ,  Lindle, James R. ,  Canedy, Chadwick L.

IPC分类号： H01S5/34

CPC分类号： B82Y20/00 ,  H01S5/3077 ,  H01S5/3401 ,  H01S5/3407 ,  H01S5/3416 ,  H01S5/3422 ,  H01S5/34306

公开(公告)号：EP2702648A4

公开(公告)日：2015-04-22

申请号：EP12774690

申请日：2012-03-16

申请人： US GOV SEC NAVY

发明人： VURGAFTMAN IGOR ,  MEYER JERRY R ,  CANEDY CHADWICK LAWRENCE ,  BEWLEY WILLIAM W ,  KIM CHUL SOO ,  KIM MIJIN ,  MERRITT CHARLES D

IPC分类号： H01S3/00

CPC分类号： H01S5/3402 ,  B82Y20/00 ,  H01S5/305 ,  H01S5/3086 ,  H01S5/3401 ,  H01S5/3407 ,  H01S5/3422 ,  H01S5/34313

摘要： Methods for improving the performance of type-II and type-I ICLs, particularly in the mid-IR wavelength range, are provided. The electron injector of a type-II or a type-I ICL can be heavily n-doped to increase the ratio of electrons to holes in the active quantum wells, thereby increasing the probability of radiative recombination in the active quantum wells and reducing the threshold current density Jth needed to achieve lasing. For both type-II and type-I ICLs, the doping should have a sheet density in the low-1012 range. In either the type-II or the type-I case, in some embodiments, heavy doping can be concentrated in the middle quantum wells of the electron injector, while in other embodiments, doping with silicon can be shifted towards the active quantum wells.

公开(公告)号：EP2779333A1

公开(公告)日：2014-09-17

申请号：EP12843889.2

申请日：2012-06-22

申请人： Sumitomo Electric Industries, Ltd. ,  Sony Corporation

发明人： KYONO Takashi ,  ENYA Yohei ,  UENO Masaki ,  YANASHIMA Katsunori ,  TASAI Kunihiko ,  NAKAJIMA Hiroshi ,  FUTAGAWA Noriyuki

IPC分类号： H01S5/343 ,  H01S5/22

CPC分类号： H01S5/3013 ,  B82Y20/00 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3202 ,  H01S5/3213 ,  H01S5/3215 ,  H01S5/3403 ,  H01S5/3407 ,  H01S5/34333

摘要： A nitride semiconductor light emitting device having a structure capable of reducing a lateral spread of carriers flowing from a semiconductor ridge is provided. In the semiconductor laser on the {20-21} plane, two-dimensional hole gas is created at the heterojunction in a hole band. When the heterojunction that generates two-dimensional hole gas is located outside the semiconductor ridge, the two-dimensional hole gas causes carriers in the lateral direction to spread in the p-side semiconductor region. On the other hand, two-dimensional hole gas cannot be generated at the heterojunction in the hole band in the semiconductor laser on the c-plane. When the heterojunction HJ is contained in the semiconductor ridge, two-dimensional hole gas does not cause carriers flowing out of the semiconductor ridge to spread in the lateral direction.

摘要翻译： 提供了一种氮化物半导体发光器件，该氮化物半导体发光器件具有能够减小从半导体脊流动的载流子的横向扩展的结构。 在{20-21}面的半导体激光器中，在空穴带的异质结中产生二维空穴气体。 当产生二维空穴气体的异质结位于半导体脊的外部时，二维空穴气体导致横向载流子扩散到p侧半导体区域中。 另一方面，在c面上的半导体激光器的空穴带中的异质结处不能产生二维空穴气体。 当异质结HJ被包含在半导体脊中时，二维空穴气不会导致从半导体脊流出的载流子在横向方向上扩散。

公开(公告)号：EP2340589A4

公开(公告)日：2014-03-05

申请号：EP09822404

申请日：2009-10-07

申请人： US GOV SEC NAVY

发明人： VURGAFTMAN IGOR ,  MEYER JERRY R ,  KIM MIJIN ,  BEWLEY WILLIAM W ,  KIM CHUL-SOO ,  LINDLE JAMES R ,  CANEDY CHADWICK L

IPC分类号： H01S5/34

CPC分类号： B82Y20/00 ,  H01S5/3077 ,  H01S5/3401 ,  H01S5/3407 ,  H01S5/3416 ,  H01S5/3422 ,  H01S5/34306

摘要： A type II interband cascade gain medium including a thick and indium-rich GaInSb hole well, two or more GaSb hole wells, electron and hole injectors are separated by a thick AISb barrier, the thickness of the firs InAs electron well in the electron injector, as well as the total thickness of the electron injector and the number of cascaded stages is reduced, transition regions are inserted at the interfaces between the various regions of the gain medium, thick separate confinement layers comprising Ga(InAIAs)Sb are disposed between the active gain region and the cladding, and the doping profile of the cladding layers is optimized to minimize the overlap of the optical mode with the most heavily-doped portion of the InAs/AISb SL cladding layers.

公开(公告)号：EP2340589A1

公开(公告)日：2011-07-06

申请号：EP09822404.1

申请日：2009-10-07

申请人： The Government of the United States of America as represented by the Secretary of the Navy

发明人： VURGAFTMAN, Igor ,  MEYER, Jerry, R. ,  MIJIN, Kim ,  BEWLEY, William, W. ,  CHUL-SOO, Kim ,  LINDLE, James, R. ,  CANDEY, Chadwick, L.

IPC分类号： H01S3/14

CPC分类号： B82Y20/00 ,  H01S5/3077 ,  H01S5/3401 ,  H01S5/3407 ,  H01S5/3416 ,  H01S5/3422 ,  H01S5/34306

摘要： A type II interband cascade gain medium including a thick and indium-rich GaInSb hole well, two or more GaSb hole wells, electron and hole injectors are separated by a thick AISb barrier, the thickness of the firs InAs electron well in the electron injector, as well as the total thickness of the electron injector and the number of cascaded stages is reduced, transition regions are inserted at the interfaces between the various regions of the gain medium, thick separate confinement layers comprising Ga(InAIAs)Sb are disposed between the active gain region and the cladding, and the doping profile of the cladding layers is optimized to minimize the overlap of the optical mode with the most heavily-doped portion of the InAs/AISb SL cladding layers.