公开(公告)号：EP3113224B1

公开(公告)日：2020-07-08

申请号：EP16172095.8

申请日：2016-05-31

申请人： Canon Kabushiki Kaisha

发明人： SHOYAMA, Toshihiro ,  TAKAKUSAGI, Hiroshi ,  YAMAZAKI, Yasuo ,  ISHINO, Hideaki ,  OGAWA, Toshiyuki

IPC分类号： H01L27/146 ,  H01L31/0288 ,  H01L31/0392 ,  H01L21/265 ,  H01L21/322 ,  H01L29/36

公开(公告)号：EP3525239B1

公开(公告)日：2020-09-16

申请号：EP19155367.6

申请日：2019-02-04

申请人： CANON KABUSHIKI KAISHA

发明人： OGAWA, Toshiyuki ,  SATO, Nabuhiko ,  KURIHARA, Masaki ,  WADA, Yoichi

IPC分类号： H01L27/146

公开(公告)号：EP3640988A1

公开(公告)日：2020-04-22

申请号：EP19203195.3

申请日：2019-10-15

申请人： CANON KABUSHIKI KAISHA

发明人： OGAWA, Toshiyuki ,  SUZUKI, Sho ,  OKABE, Takehito ,  YOMORI, Mitsuhiro ,  SUZUKI, Yukinobu ,  KAWANO, Akihiro ,  TANGE, Tsutomu

IPC分类号： H01L27/146

摘要： Photoelectric conversion apparatus includes semiconductor layer in which first photoelectric converters are arranged in light-receiving region and second photoelectric converters are arranged in light-shielded region, light-shielding wall arranged above the semiconductor layer and defining apertures respectively corresponding to the first photoelectric converters, and light-shielding film arranged above the semiconductor layer. The light-shielding film includes first portion extending along principal surface of the semiconductor layer to cover the second photoelectric converters. The first portion has lower surface and upper surface. The light-shielding wall includes second portion whose distance from the semiconductor layer is larger than distance between the upper surface and the principal surface. Thickness of the first portion in direction perpendicular to the principal surface is larger than thickness of the second portion in direction parallel to the principal surface.

公开(公告)号：EP3113224A2

公开(公告)日：2017-01-04

申请号：EP16172095.8

申请日：2016-05-31

申请人： Canon Kabushiki Kaisha

发明人： SHOYAMA, Toshihiro ,  TAKAKUSAGI, Hiroshi ,  YAMAZAKI, Yasuo ,  ISHINO, Hideaki ,  OGAWA, Toshiyuki

IPC分类号： H01L27/146

摘要： A method of manufacturing an imaging apparatus includes: preparing a substrate comprising a wafer and a silicon layer arranged on the wafer, the wafer including a first semiconductor region made of single crystal silicon with an oxygen concentration not less than 2 × 10 16 atoms/cm 3 and not greater than 4 × 10 17 atoms/cm 3 , the silicon layer including a second semiconductor region made of single crystal silicon with an oxygen concentration lower than the oxygen concentration in the first semiconductor region; annealing the substrate in an atmosphere containing oxygen and setting the oxygen concentration in the second semiconductor region within the range not less than 2 × 10 16 atoms/cm 3 and not greater than 4 × 10 17 atoms/cm 3 ; and forming a photoelectric conversion element in the second semiconductor region after the annealing.

摘要翻译： 一种制造成像装置的方法包括：制备包括晶片和布置在晶片上的硅层的衬底，所述晶片包括由氧浓度不小于2×10 16原子/ cm的单晶硅制成的第一半导体区域 3并且不大于4×10 17原子/ cm 3，所述硅层包括氧浓度低于所述第一半导体区域中的氧浓度的单晶硅制成的第二半导体区域; 在含有氧的气氛中使基板退火，将第二半导体区域的氧浓度设定在2×10 16原子/ cm 3以上4×10 17原子/ cm 3以下的范围内。 以及在退火之后的第二半导体区域中形成光电转换元件。

公开(公告)号：EP3525239A1

公开(公告)日：2019-08-14

申请号：EP19155367.6

申请日：2019-02-04

申请人： CANON KABUSHIKI KAISHA

发明人： OGAWA, Toshiyuki ,  SATO, Nabuhiko ,  KURIHARA, Masaki ,  WADA, Yoichi

IPC分类号： H01L27/146

摘要： A photoelectric conversion apparatus includes a semiconductor layer having a front surface and a back surface and in which a plurality of photoelectric conversion portions is provided between the front surface and the back surface, a wiring structure arranged on the front surface side of the semiconductor layer, a separation portion arranged between the plurality of photoelectric conversion portions and formed by a trench continuing from the back surface, a first light shielding portion arranged above the semiconductor layer on the back surface side so as to overlap the separation portion, and a second light shielding portion arranged above the semiconductor layer on the back surface side so as to face the first light shielding portion via a region located above at least one photoelectric conversion portion among the plurality of photoelectric conversion portions.

公开(公告)号：EP3113224A3

公开(公告)日：2017-08-23

申请号：EP16172095.8

申请日：2016-05-31

申请人： Canon Kabushiki Kaisha

发明人： SHOYAMA, Toshihiro ,  TAKAKUSAGI, Hiroshi ,  YAMAZAKI, Yasuo ,  ISHINO, Hideaki ,  OGAWA, Toshiyuki

IPC分类号： H01L27/146 ,  H01L31/0288 ,  H01L31/0392

摘要： A method of manufacturing an imaging apparatus includes: preparing a substrate comprising a wafer and a silicon layer arranged on the wafer, the wafer including a first semiconductor region made of single crystal silicon with an oxygen concentration not less than 2 × 10 16 atoms/cm 3 and not greater than 4 × 10 17 atoms/cm 3 , the silicon layer including a second semiconductor region made of single crystal silicon with an oxygen concentration lower than the oxygen concentration in the first semiconductor region; annealing the substrate in an atmosphere containing oxygen and setting the oxygen concentration in the second semiconductor region within the range not less than 2 × 10 16 atoms/cm 3 and not greater than 4 × 10 17 atoms/cm 3 ; and forming a photoelectric conversion element in the second semiconductor region after the annealing.

摘要翻译： 制造成像设备的方法包括：制备衬底，其包括晶片和设置在晶片上的硅层，晶片包括具有氧浓度由单晶硅制成的不小于2×1016个原子/ cm3和第一半导体区域 不大于4×10 17原子/ cm 3，所述硅层包括由氧浓度低于所述第一半导体区中的氧浓度的单晶硅制成的第二半导体区; 在含氧气氛中退火衬底，并将第二半导体区中的氧浓度设定在不小于2×1016原子/ cm3且不大于4×1017原子/ cm3的范围内; 以及在退火之后在第二半导体区域中形成光电转换元件。