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公开(公告)号：EP0297413A2
公开(公告)日：1989-01-04
申请号：EP88109933.7
申请日：1988-06-22
CPC分类号： H01L27/14665
摘要： A photoelectric conversion device comprises plural photoelectric conversion elements arranged in a linear array, plural common lines (305,308) each connecting at least two of individual output electrodes (301,304) of the plural photoelectric conversion elements, conductor layers of a constant potential provided in the vicinity of crossing portions of the individual output electrodes (301,304) and said common lines, and wirings mutually connecting the conductor layers.
摘要翻译： 光电转换装置包括以线状排列的多个光电转换元件，分别连接多个光电转换元件的各个输出电极（301,304）的至少两个的公共线（305,308），设置在附近的恒定电位的导体层 各个输出电极（301,304）和所述公共线的交叉部分以及相互连接导体层的布线。
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公开(公告)号：EP0296603A3
公开(公告)日：1989-02-08
申请号：EP88110054.9
申请日：1988-06-23
发明人： Hatanaka, Katsunori , Saika, Toshihiro , Ishii, Takayuki , Yamada, Katsuhiko , Itabashi, Satoshi , Tashiro, Kazuaki , Shimada, Tetsuya
CPC分类号： H04N1/0316 , H01L27/14609 , H01L27/14665 , H01L31/1126 , H04N1/0313
摘要： An image sensor includes a photoelectric conversion unit, a charge storage unit (16), a switch unit (17,18), and a wiring unit (19), all of which are formed on a single substrate. A capacitor of the charge storage unit is formed at the same substrate position as that of a pattern of said wiring unit.
摘要翻译： 图像传感器包括全部形成在单个基板上的光电转换单元，电荷存储单元（16），开关单元（17,18）和布线单元（19）。 电荷存储单元的电容器形成在与所述布线单元的图案相同的衬底位置处。
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公开(公告)号：EP0297413A3
公开(公告)日：1989-02-08
申请号：EP88109933.7
申请日：1988-06-22
CPC分类号： H01L27/14665
摘要： A photoelectric conversion device comprises plural photoelectric conversion elements arranged in a linear array, plural common lines (305,308) each connecting at least two of individual output electrodes (301,304) of the plural photoelectric conversion elements, conductor layers of a constant potential provided in the vicinity of crossing portions of the individual output electrodes (301,304) and said common lines, and wirings mutually connecting the conductor layers.
摘要翻译： 本发明提供一种光电转换装置，其特征在于，具备：排列成线状的多个光电转换元件;多个公共线（305,308），分别连接多个光电转换元件的各个输出电极（301,304）中的至少两个;设置在附近的恒定电位的导体层 各个输出电极（301,304）和所述公共线的交叉部分，以及相互连接导体层的布线。
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5.发明授权Semiconductor device and signal processing device having said device provided therein 失效一种半导体器件，并与这种结构的信号处理装置，
公开(公告)号：EP0365312B1
公开(公告)日：1996-12-27
申请号：EP89310726.8
申请日：1989-10-18
IPC分类号： H01L31/18 , H01L31/0352 , H01L27/144 , H01L27/146
CPC分类号： H04N1/02805 , H01L27/14643 , H04N1/028 , H04N5/374
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6.发明公开Semiconductor device and signal processing device having said device provided therein 失效具有该设备的半导体器件和信号处理器件
公开(公告)号：EP0365312A3
公开(公告)日：1991-01-16
申请号：EP89310726.8
申请日：1989-10-18
IPC分类号： H01L31/18 , H01L31/0352 , H01L27/144 , H01L27/146
CPC分类号： H04N1/02805 , H01L27/14643 , H04N1/028 , H04N5/374
摘要： A semiconductor device (Fig.3) having a plurality of charge accumulation type sensor elements (1005) and electroconductive members (1002) capacitively coupled to said sensor elements (1005) through insulating members (1003) commonly, and by the constitution of the semiconductor element which outputs a signal voltage corresponding to the average value of the respective voltages accumulated in the above plurality of sensor elements (1005), the time for idle read can be obviated to make the read speed higher. The electroconductive members (1002) and the insulating members (1003) may be incorporated as respective common layers.
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7.发明公开Semiconductor device and signal processing device having said device provided therein 失效Halbleiteranordnung und eine Signalbehandlungsvorrichtung mit dieser Anordnung。
公开(公告)号：EP0365312A2
公开(公告)日：1990-04-25
申请号：EP89310726.8
申请日：1989-10-18
IPC分类号： H01L31/18 , H01L31/0352 , H01L27/144 , H01L27/146
CPC分类号： H04N1/02805 , H01L27/14643 , H04N1/028 , H04N5/374
摘要： A semiconductor device (Fig.3) having a plurality of charge accumulation type sensor elements (1005) and electroconductive members (1002) capacitively coupled to said sensor elements (1005) through insulating members (1003) commonly, and by the constitution of the semiconductor element which outputs a signal voltage corresponding to the average value of the respective voltages accumulated in the above plurality of sensor elements (1005), the time for idle read can be obviated to make the read speed higher. The electroconductive members (1002) and the insulating members (1003) may be incorporated as respective common layers.
摘要翻译： 具有通过绝缘构件（1003）电容耦合到所述传感器元件（1003）的多个电荷累积型传感器元件（1005）和导电构件（1002）的半导体器件（图3），并且通过半导体 输出与上述多个传感器元件（1005）中累积的各个电压的平均值相对应的信号电压的元件，可以消除空闲读取的时间，使读取速度更高。 导电构件（1002）和绝缘构件（1003）可以作为各自的公共层结合。
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公开(公告)号：EP0296603A2
公开(公告)日：1988-12-28
申请号：EP88110054.9
申请日：1988-06-23
发明人： Hatanaka, Katsunori , Saika, Toshihiro , Ishii, Takayuki , Yamada, Katsuhiko , Itabashi, Satoshi , Tashiro, Kazuaki , Shimada, Tetsuya
CPC分类号： H04N1/0316 , H01L27/14609 , H01L27/14665 , H01L31/1126 , H04N1/0313
摘要： An image sensor includes a photoelectric conversion unit, a charge storage unit (16), a switch unit (17,18), and a wiring unit (19), all of which are formed on a single substrate. A capacitor of the charge storage unit is formed at the same substrate position as that of a pattern of said wiring unit.
摘要翻译： 图像传感器包括光电转换单元，电荷存储单元（16），开关单元（17,18）和布线单元（19），所有这些都形成在单个基板上。 电荷存储单元的电容器形成在与所述布线单元的图案相同的基板位置处。
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