摘要:
An image sensor includes a photoelectric conversion unit, a charge storage unit (16), a switch unit (17,18), and a wiring unit (19), all of which are formed on a single substrate. A capacitor of the charge storage unit is formed at the same substrate position as that of a pattern of said wiring unit.
摘要:
A photo-electric converter comprises: a plurality of linearly arranged photo-electric conversion elements; a plurality of common lines for connecting in common at least two of discrete output electrodes of the photo-electric conversion elements; a conductor layer kept at a constant potential and held between insulator layers at crosspoints of the discrete output electrodes and the common lines; and wirings kept at a constant potential and formed between the discrete electrodes and the common electrodes.
摘要:
A cantilever unit comprises a cantilever for supporting a probe and a displacement amount detecting means, the displacement amount detecting means being integrated with the cantilever. An information processing apparatus comprises the cantilever unit and optionally an information recording medium stationed in close vicinity to the unit, wherein an information in the medium is reproduced at a signal on the basis of a displacement amount of the cantilever. An atomic force microscope and magnetic force microscope comprise the cantilever unit, respectively.
摘要:
In a method of reading a signal in a charge-storage line sensor so as to cause switching means respectively corresponding to a plurality of charge-storage means sequentially to read external signals stored after resetting and to sequentially perform resetting operations during the read operations, a dead time interval is provided in the read period of the charge-storage means, and the resetting operation is performed in a desired portion of the dead time interval after the read operation is completed.
摘要:
A photoelectric conversion device having a photoelectric conversion section and a transistor for transferring or amplification of the photoelectric conversion signal or an accumulating section of a photo carrier. The photoelectric conversion section and the transistor or the accumulating section have common semiconductor layer.
摘要:
An image sensor includes a photoelectric conversion unit, a charge storage unit (16), a switch unit (17,18), and a wiring unit (19), all of which are formed on a single substrate. A capacitor of the charge storage unit is formed at the same substrate position as that of a pattern of said wiring unit.