公开(公告)号：EP3817070A1

公开(公告)日：2021-05-05

申请号：EP19206421.0

申请日：2019-10-31

申请人： CSEM Centre Suisse d'Electronique et de Microtechnique SA

发明人： FAES, Antonin ,  PAVIET-SALOMON, Bertrand ,  BADEL, Nicolas ,  CHAMPLIAUD, Jonathan ,  DESPEISSE, Matthieu ,  BALLIF, Christophe ,  ANDREATTA, Gaëlle

IPC分类号： H01L31/0224 ,  H01L31/05 ,  H01L31/068 ,  C25D5/02 ,  H01L21/465 ,  H01L51/44

摘要： Method of manufacturing a single-side-contacted photovoltaic device (1), comprising the steps of:
a) providing a photovoltaically-active substrate (3) defining a plurality of alternating hole collecting zones (3a) and electron collecting zones (3b) arranged in parallel strips;
b) depositing a conductive layer (5) across said zones;
c) depositing at least one conductive track (9) extending along at least part of each of said zones (3a, 3b);
d) selectively forming a dielectric layer (7) on each of said zones (3a, 3b), so as to leave an exposed area free of dielectric at an interface between adjacent zones (3a, 3b);
e) etching said conductive layer (5) in said exposed areas;
f) applying a plurality of interconnecting conductors (11a, 11b) so as to electrically interconnect at least a portion of said hole collecting zones (3a) with each other, and to electrically interconnect at least a portion of said electron collecting zones (3b) with each other.