公开(公告)号：EP1771882A1

公开(公告)日：2007-04-11

申请号：EP05760793.9

申请日：2005-07-25

申请人： CSEM Centre Suisse d'Electronique et de Microtechnique SA

发明人： COTTIER, Kaspar ,  KAUFMANN, Rolf ,  KUNZ, Rino, E. ,  OGGIER, Thierry ,  VOIRIN, Guy ,  NEUKOM, Simon ,  LEHMANN, Michael

IPC分类号： H01L27/146 ,  G01N21/64

CPC分类号： H01L31/0232 ,  H01L27/14601 ,  H01L27/14623 ,  H01L27/148 ,  H01L31/02005

摘要： A pixel (1) is formed in a semiconductor substrate (S) with a plane surface for use in a photodetector. It comprises an active region for converting incident light (In) into charge carriers, photogates (PGL, PGM, PGR) for generating a lateral electric potential (F(x)) across the active region, and an integration gate (IG) for storing charge carriers generated in the active region and a dump site (Ddiff). The pixel (1) further comprises separation-enhancing means (SL) for additionally enhancing charge separation in the active region and charge transport from the active region to the integration gate (IG). The separation-enhancing means (SL) are for instance a shield layer designed such that for a given lateral electric potential (F(x)), the incident light (In) does not impinge on the section from which the charge carriers would not be transported to the integration gate (IG).