公开(公告)号：EP3400486A1

公开(公告)日：2018-11-14

申请号：EP17701611.0

申请日：2017-01-04

申请人： Infinera Corporation

发明人： EVANS, Peter W. ,  OSENBACH, John W. ,  KISH, Fred A. ,  ZHANG, Jiaming ,  OLMEDO, Miguel Iglesias ,  ANAGNOSTI, Maria

IPC分类号： G02F1/225 ,  G02B6/42 ,  H04B10/40

CPC分类号： H01L25/18 ,  G02B6/00 ,  G02B6/12004 ,  G02B6/4274 ,  G02B2006/12121 ,  G02B2006/12123 ,  G02B2006/12135 ,  G02B2006/12147 ,  G02F1/2255 ,  G02F2001/212 ,  G02F2201/127 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/5381 ,  H01L23/5386 ,  H01L24/09 ,  H01L24/49 ,  H01L31/02005 ,  H01L2924/00014 ,  H01L2924/1433 ,  H01L2924/15323 ,  H04B10/40 ,  H04B10/506 ,  H01L2224/45099

摘要： Methods, systems, and apparatus, including a photonic integrated circuit package, including a photonic integrated circuit chip, including multiple electrodes configured to receive the electrical signal, where at least one characteristics of a segment of the traveling wave active optical element is changed based on the electrical signal received by a corresponding electrode of the multiple electrodes; a ground electrode; and multiple bond contacts; and an interposer bonded to at least a portion of the photonic integrated circuit chip, the interposer including a conductive trace formed on a surface of the interposer, the conductive trace electrically coupled to a source of the electrical signal; a ground trace; and multiple conductive vias electrically coupled to the conductive trace, where each conductive via of the multiple conductive vias is bonded with a respective bond contact of the multiple bond contacts of the photonic integrated circuit chip.

公开(公告)号：EP2810111B1

公开(公告)日：2018-09-05

申请号：EP12867223.5

申请日：2012-01-31

申请人： Hewlett Packard Enterprise Development LP

发明人： MATHAI, Sagi Varghese ,  TAN, Michael Renne Ty ,  ROSENBERG, Paul Kessler ,  SORIN, Wayne Victor ,  PANOTOPOULOS, Georgios ,  PATRA, Susant K ,  STRAZNICKY, Joseph

IPC分类号： G02B6/42 ,  G02B6/12 ,  H01L31/02 ,  H01L31/0203 ,  H01L31/167 ,  H04B10/25 ,  H05K1/02

CPC分类号： H04B10/2504 ,  G02B6/4245 ,  H01L31/02005 ,  H01L31/0203 ,  H01L31/167 ,  H05K1/0274 ,  H05K2201/0305 ,  H05K2201/10121 ,  H05K2201/10977

摘要： A combination underfill-dam and electrical-interconnect structure for an opto-electronic engine. The structure includes a first plurality of electrical-interconnect solder bodies. The first plurality of electrical-interconnect solder bodies includes a plurality of electrical interconnects. The first plurality of electrical-interconnect solder bodies, is disposed to inhibit intrusion of underfill material into an optical pathway of an opto-electronic component for the opto-electronic engine. A system and an opto-electronic engine that include the combination underfill-dam and electrical interconnect structure are also provided.

公开(公告)号：EP3281041A1

公开(公告)日：2018-02-14

申请号：EP15888100.3

申请日：2015-04-07

申请人： Shenzhen Xpectvision Technology Co., Ltd.

发明人： CAO, Peiyan ,  LIU, Yurun

IPC分类号： G01T1/24

CPC分类号： G01T1/2928 ,  H01L25/042 ,  H01L27/14659 ,  H01L27/14676 ,  H01L31/02005 ,  H01L31/02019 ,  H01L31/115

摘要： Disclosed herein is a method of making an apparatus suitable for detecting x-ray, the method comprising: obtaining a substrate having a first surface and a second surface, wherein the substrate comprises an electronics system in or on the substrate, wherein the substrate comprises a plurality of electric contacts are on the first surface; obtaining a first chip comprising a first X-ray absorption layer, wherein the first X-ray absorption layer comprises an electrode; bonding the first chip to the substrate such that the electrode of the first X-ray absorption layer is electrically connected to at least one of the electrical contacts.

公开(公告)号：EP3279927A1

公开(公告)日：2018-02-07

申请号：EP16773202.3

申请日：2016-03-31

申请人： Hamamatsu Photonics K.K.

发明人： ISHIDA Atsushi ,  HOSOKAWA Noburo ,  NAGANO Terumasa ,  BABA Takashi

IPC分类号： H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC分类号： H01L27/14687 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/522 ,  H01L23/532 ,  H01L24/02 ,  H01L24/05 ,  H01L24/13 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14643 ,  H01L31/02005 ,  H01L31/0203 ,  H01L31/02161 ,  H01L31/022408 ,  H01L31/103 ,  H01L31/107 ,  H01L2224/02313 ,  H01L2224/0233 ,  H01L2224/0235 ,  H01L2224/0236 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/02381 ,  H01L2224/0345 ,  H01L2224/05558 ,  H01L2224/05567 ,  H01L2224/0557 ,  H01L2224/10126 ,  H01L2224/11 ,  H01L2224/12105 ,  H01L2224/13007 ,  H01L2224/13009 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13025 ,  H01L2924/10253 ,  H01L2924/12043 ,  H01L2924/351 ,  H01L2924/00014

摘要： A through hole 7 is a vertical hole. When attention is paid to regions on both sides of a center line CL of the through hole 7 in a plane including the center line CL of the through hole, it is assumed that a segment that connects a first point X1 corresponding to the edge of an opening 10a of an insulating layer 10 and a second point X2 corresponding to the edge of a second opening 7b is a first segment S1, a segment that connects the second point X2 and a third point X3 corresponding to an intersection point between the second opening 7b and a surface 10b of the insulating layer 10 is a second segment S2, and a segment that connects the third point X3 and the first point X1 is a third segment S3. In this case, the first area A1 of the insulating layer 10 that is located on one side with respect to the first segment S1 is larger than the sum of the second area A2 of the insulating layer 10 that is surrounded by the first segment S1, the second segment S2, and the third segment S3 and the third area A3 of the insulating layer 10 that is located on the other side with respect to the third segment S3.

摘要翻译： 通孔7是垂直孔。 当关注贯通孔7的中心线CL的两侧的区域时，在包含贯通孔的中心线CL的平面中，假设连接与第一点X1对应的第一点X1 绝缘层10的开口10a和与第二开口7b的边缘相对应的第二点X2是第一段S1，连接第二点X2和对应于第二开口7b之间的交点的第三点X3的段 并且绝缘层10的表面10b是第二段S2，并且连接第三点X3和第一点X1的段是第三段S3。 在这种情况下，绝缘层10的相对于第一段S1位于一侧的第一区域A1大于由第一段S1包围的绝缘层10的第二区域A2的总和， 第二区段S2以及绝缘层10的第三区段S3和第三区域A3，其位于相对于第三区段S3的另一侧。

公开(公告)号：EP3273478A1

公开(公告)日：2018-01-24

申请号：EP15885596.5

申请日：2015-12-14

申请人： Hamamatsu Photonics K.K.

发明人： KAMAKURA, Shogo ,  YAMADA, Ryuta ,  SATO, Kenichi

IPC分类号： H01L27/146 ,  G01J1/02 ,  H01L27/144 ,  H01L31/10 ,  H01L31/107 ,  H04N5/369

CPC分类号： H01L31/02005 ,  G01J1/02 ,  G01J1/44 ,  G01J2001/4466 ,  G01J2001/448 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L27/1446 ,  H01L31/02027 ,  H01L31/0203 ,  H01L31/02322 ,  H01L31/10 ,  H01L31/107 ,  H01L2224/05554 ,  H01L2224/32227 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/10155 ,  H01L2924/12043 ,  H01L2924/30105 ,  H04N5/369 ,  H01L2924/00014

摘要： A semiconductor substrate IN includes a first region RS1 in which a plurality of pixels are disposed and a second region RS2 located inside the first region RS1 to be surrounded by the first region RS1 when viewed from a direction in which a principal surface INa and a principal surface 1Nb oppose each other. A through-hole TH penetrating through the semiconductor substrate IN is formed in the second region RS2 of the semiconductor substrate 1N. An electrode E3 disposed on a side of the principal surface INa of the semiconductor substrate IN and electrically connected to the plurality of pixels and an electrode E5 disposed on a side of a principal surface 20a of a mount substrate 20 are connected to each other via a bonding wire W1 inserted through the through-hole TH.

摘要翻译： 半导体基板IN具有配置有多个像素的第一区域RS1，以及从第一区域RS1的主面INa和主体的方向观察时位于第一区域RS1的内侧且被第一区域RS1包围的第二区域RS2 表面1Nb彼此相对。 贯穿半导体衬底1N的通孔TH形成在半导体衬底1N的第二区域RS2中。 布置在半导体基板1N的主表面INa侧并且电连接到多个像素的电极E3和布置在安装基板20的主表面20a侧的电极E5经由 通过贯通孔TH插入的接合线W1。

公开(公告)号：EP2677555A3

公开(公告)日：2018-01-24

申请号：EP13397520.1

申请日：2013-06-17

申请人： Oxford Instruments Technologies Oy

发明人： Kostamo, Pasi

IPC分类号： H01L31/115 ,  H01L31/02 ,  H01L31/0224 ,  H01L29/06 ,  G01T1/24

CPC分类号： H01L31/02005 ,  G01T1/241 ,  G01T1/2928 ,  H01L29/0619 ,  H01L31/022408 ,  H01L31/115

摘要： A semiconductor device, for example a drift detector, comprises a piece of semiconductor material. On a surface of said piece of semiconductor material, a number of electrodes (1013, 1014) exist and are configured to assume different electric potentials. A guard structure comprises a two-dimensional array of conductive patches (1012), at least some of which are left to assume an electric potential under the influence of electric potentials existing at said electrodes. The guard structure controllably lowers an electric potential on the surface of the semiconductor material, which is advantageous from the manufacturing point of view and offers versatility in designing the other features of the semiconductor device.

摘要翻译： 半导体器件，例如漂移检测器，包括一块半导体材料。 在所述半导体材料片的表面上，存在多个电极（1013,1014）并且被配置为呈现不同的电势。 防护结构包括导电贴片（1012）的二维阵列，其中至少一些导电贴片在存在于所述电极处的电势的影响下保持呈现电势。 防护结构可控制地降低半导体材料表面上的电势，这从制造的角度来看是有利的并且提供设计半导体器件的其他特征的通用性。

公开(公告)号：EP3003672B1

公开(公告)日：2017-08-16

申请号：EP14728951.6

申请日：2014-06-06

申请人： Würth Elektronik GmbH & Co. KG

发明人： KOSTELNIK, Jan ,  WOLF, Jürgen

IPC分类号： H01L23/00 ,  H01L51/00 ,  H01L31/02 ,  H01L33/56 ,  H01L31/0203 ,  H01L51/52 ,  H01L51/56 ,  H01L31/048 ,  H01L31/05 ,  H01L31/18 ,  H01L33/62 ,  H05K1/02 ,  H05K1/14 ,  H05K1/18 ,  H05K3/46

CPC分类号： H01L51/5237 ,  H01L24/19 ,  H01L31/02005 ,  H01L31/02008 ,  H01L31/0203 ,  H01L31/048 ,  H01L31/05 ,  H01L31/1884 ,  H01L33/56 ,  H01L33/62 ,  H01L51/0022 ,  H01L51/5203 ,  H01L51/524 ,  H01L51/56 ,  H01L2251/5369 ,  H01L2924/12044 ,  H01L2933/0033 ,  H01L2933/005 ,  H01L2933/0066 ,  H05K1/0274 ,  H05K1/144 ,  H05K1/185 ,  H05K3/4644 ,  H05K2201/0108 ,  H05K2201/10106 ,  H05K2201/10121 ,  Y02E10/50 ,  H01L2924/00

公开(公告)号：EP3188237A1

公开(公告)日：2017-07-05

申请号：EP16197569.3

申请日：2012-07-30

申请人： Micron Technology, Inc.

发明人： SCHUBERT, Martin F.

IPC分类号： H01L27/14 ,  H01L27/15 ,  H01L33/38 ,  H01L33/32 ,  H01L33/02 ,  H01L31/0304 ,  H01L33/00 ,  H01L33/62 ,  H01L31/02

CPC分类号： H01L33/62 ,  H01L27/153 ,  H01L31/02005 ,  H01L31/03044 ,  H01L31/03048 ,  H01L33/0012 ,  H01L33/32 ,  H01L33/382 ,  H01L2924/0002 ,  H01L2924/00

摘要： High-voltage solid-state transducer (SST) devices and associated systems and methods are disclosed herein. An SST device in accordance with a particular embodiment of the present technology includes a carrier substrate, a first terminal, a second terminal and a plurality of SST dies connected in series between the first and second terminals. The individual SST dies can include a transducer structure having a p-n junction, a first contact and a second contact. The transducer structure forms a boundary between a first region and a second region with the carrier substrate being in the first region. The first and second terminals can be configured to receive an output voltage and each SST die can a forward junction voltage less than the output voltage.

摘要翻译： 本文公开了高压固态传感器（SST）装置和相关的系统和方法。 根据本技术的特定实施例的SST器件包括串联连接在第一和第二端子之间的载体衬底，第一端子，第二端子和多个SST管芯。 单独的SST管芯可以包括具有p-n结，第一触点和第二触点的换能器结构。 换能器结构形成第一区域和第二区域之间的边界，其中载体衬底处于第一区域中。 第一和第二端子可以被配置为接收输出电压，并且每个SST管芯可以具有小于输出电压的正向结电压。

公开(公告)号：EP3165947A1

公开(公告)日：2017-05-10

申请号：EP15814732.2

申请日：2015-06-10

申请人： JX Nippon Mining & Metals Corp.

发明人： MURAKAMI Masaomi ,  MIKAMI Makoto ,  MURAKAMI Kouji ,  NODA Akira ,  IMORI Toru

IPC分类号： G01T1/24 ,  H01L27/144 ,  H01L27/146 ,  H01L31/08

CPC分类号： G01T1/24 ,  H01L24/05 ,  H01L24/06 ,  H01L24/09 ,  H01L27/144 ,  H01L27/146 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14676 ,  H01L27/14696 ,  H01L31/02005 ,  H01L31/022408 ,  H01L31/0296 ,  H01L31/02966 ,  H01L31/08 ,  H01L31/115 ,  H01L2224/0345 ,  H01L2224/03464 ,  H01L2224/0558 ,  H01L2224/05583 ,  H01L2224/05584 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05664

摘要： The present invention provides a radiation detector UBM electrode structure body and a radiation detector which suppress the degradation of metal electrode layers at the time of formation of UBM layers and achieve sufficient electric characteristics, and a method of manufacturing the same. A radiation detector UBM electrode structure body according to the present invention includes a substrate made of CdTe or CdZnTe, comprising a Pt or Au electrode layer formed on the substrate by electroless plating, an Ni layer formed on the Pt or Au electrode layer by sputtering, and an Au layer formed on the Ni layer by sputtering.

摘要翻译： 本发明提供了一种辐射检测器UBM的电极结构体和在哪个形成UBM层的时间抑制的金属电极层的劣化和实现充分的电特性的放射线检测器，及其制造方法。 一种辐射探测器，UBM的电极结构体雅丁到本发明包括由CdTe或碲锌镉的基板，通过溅射法包括，Ni层形成的Pt或Au电极层上形成在通过无电解电镀在基板的Pt或Au电极层， 和在Au层通过溅射法形成的Ni层上。

公开(公告)号：EP2960940B1

公开(公告)日：2017-03-22

申请号：EP15173564.4

申请日：2015-06-24

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives

发明人： Bono, Hubert ,  Robin, Ivan-Christophe

IPC分类号： H01L27/15 ,  H01L31/02 ,  H01L33/38 ,  H01L31/0224 ,  H01L27/146 ,  H01L27/144 ,  H01L31/0352 ,  H01L31/18 ,  H01L33/62 ,  H01L33/20

CPC分类号： H01L27/15 ,  H01L27/1021 ,  H01L27/1443 ,  H01L27/1446 ,  H01L27/156 ,  H01L31/02005 ,  H01L31/022416 ,  H01L31/035236 ,  H01L31/18 ,  H01L33/005 ,  H01L33/06 ,  H01L33/20 ,  H01L33/385 ,  H01L33/387 ,  H01L33/62 ,  H01L2933/0016 ,  H02S40/44