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公开(公告)号：EP4404712A1
公开(公告)日：2024-07-24
申请号：EP23152921.5
申请日：2023-01-23
发明人： MOON, Soo-Jin , BLONDIAUX, Nicolas , WALTER, Arnaud , ANDREATTA, Gaëlle , PARACCHINO, Adriana , KAMINO, Brett
CPC分类号： H10K85/50 , H10K30/40 , H10K2102/35120230201 , H10K2102/34120230201 , H10K30/85 , H10K85/701
摘要： Method of manufacturing an optoelectronic device (1), comprising the steps of:
- providing a substrate (3);
- depositing a first electrode layer (5) on said substrate (3);
- depositing a first charge-carrier selective layer (7) with a thickness less than 5nm situated directly on said first electrode layer (5);
- depositing insulating silicon oxide nanoparticles (8) directly on said first charge-carrier selective layer (7), said particles having a diameter between 10 nm and 100 nm;
- depositing a perovskite-based semiconductor layer (9) on said first charge-carrier selective layer (7) and on said insulating silicon oxide nanoparticles (8), said perovskite-based semiconductor layer (9) being in intimate contact with both said first charge-carrier selective layer (7) and said insulating silicon oxide nanoparticles (8);
- depositing a second charge-carrier selective layer (11) on said perovskite-based semiconductor layer;
- depositing a second electrode layer (13) on said second charge-carrier selective layer (11).-
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公开(公告)号：EP3973089A1
公开(公告)日：2022-03-30
申请号：EP20726462.3
申请日：2020-05-20
IPC分类号： C25D5/02 , H01L21/465 , H01L31/0224 , H01L51/44
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