公开(公告)号：EP2026383A3

公开(公告)日：2009-08-05

申请号：EP08162513.9

申请日：2008-08-18

申请人： CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement

发明人： Von Känel, Hans ,  Kaufmann, Rolf

IPC分类号： H01L27/146

CPC分类号： H01L27/14689 ,  H01L27/14659 ,  H01L31/028 ,  H01L31/1812

摘要： The present invention discloses an X-ray imaging device (100) comprising an X-ray absorber (105) that comprises a plurality of semiconductor layers. The plurality of semiconductor layers comprise a substrate (110) having a backside; and at least one absorption layer (120,130,140,150) adapted to absorb at least one X-ray photon impinging on the at least one absorption layer that is adapted to correspondingly generate in response to the at least one impinging X-ray photon at least one electron-hole pair; and a readout unit (310), wherein the readout unit is operatively coupled to the X-ray absorber (105) such to enable readout of the at least one electron-hole pair. Additional and alternative embodiments are described and claimed.