专利检索 ap:("Cabot Microelectronics Corporation") AND inv:"DINEGA, Dmitry" 第 1 页

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发明公开
COMPOSITIONS AND METHODS FOR CMP OF SILICON OXIDE, SILICON NITRIDE, AND POLYSILICON MATERIALS 审中-公开
标题翻译：组合物和方法的氧化硅，氮化硅和POLYSILICIUMMATERIALIEN的CMP

公开(公告)号：EP3025368A1

公开(公告)日：2016-06-01

申请号：EP14829255.0

申请日：2014-07-21

申请人： Cabot Microelectronics Corporation

发明人： DINEGA, Dmitry , MOEGGENBORG, Kevin , WARD, William , MATEJA, Daniel

IPC分类号： H01L21/304

CPC分类号： C09G1/02 , B24B1/00 , C09G1/00 , C09G1/04 , C09K3/1463 , C09K13/06 , H01L21/30625 , H01L21/31053 , H01L21/3212

摘要： The present invention provides a chemical mechanical polishing method for polishing a substrate comprising silicon dioxide, silicon nitride, and polysilicon. The method comprises abrading a surface of the substrate with a CMP composition to remove at least some silicon dioxide, silicon nitride and polysilicon therefrom. The CMP composition comprising a particulate ceria abrasive suspended in an aqueous carrier having a pH of about 3 to 9.5 and containing a cationic polymer; wherein the cationic polymer consists of a quaternary methacryloyloxyalkylammonium polymer.