Composition for titanium nitride hard mask and etch residue removal
    6.
    发明公开
    Composition for titanium nitride hard mask and etch residue removal 审中-公开
    用于氮化钛硬掩模和蚀刻残留物去除的组合物

    公开(公告)号:EP2922086A1

    公开(公告)日:2015-09-23

    申请号:EP14198123.3

    申请日:2014-12-16

    摘要: Aqueous compositions for stripping titanium nitride (TiN or TiNxOy) hard mask and removing etch residue are low pH aqueous composition comprising solvent, a weakly coordinating anion, amine, and at least two non-oxidizing trace metal ions. The aqueous compositions contain no non-ambient oxidizer, and are exposed to air. Bifluoride, or metal corrosion inhibitor may be added to the aqueous composition. Systems and processes use the aqueous compositions for stripping titanium nitride (TiN or TiNxOy) hard mask and removing titanium nitride (TiN or TiNxOy) etch residue.

    摘要翻译: 用于剥离氮化钛(TiN或TiNxOy)硬掩模并除去蚀刻残留物的含水组合物是包含溶剂,弱配位阴离子,胺和至少两种非氧化痕量金属离子的低pH含水组合物。 含水组合物不含非环境氧化剂,并暴露于空气中。 二氟化物或金属腐蚀抑制剂可以加入含水组合物中。 系统和工艺使用水性组合物剥离氮化钛(TiN或TiNxOy)硬掩模并除去氮化钛(TiN或TiNxOy)蚀刻残余物。

    ETCHING SOLUTION COMPOSITION AND ETCHING METHOD
    9.
    发明公开
    ETCHING SOLUTION COMPOSITION AND ETCHING METHOD 审中-公开
    蚀刻液组成及蚀刻方法

    公开(公告)号:EP2827363A1

    公开(公告)日:2015-01-21

    申请号:EP12871234.6

    申请日:2012-12-25

    申请人: Adeka Corporation

    IPC分类号: H01L21/308 C23F1/16

    摘要: An object of the present invention is to provide an etching liquid composition and etching method which, when collectively etching a multilayer film formed of an indium oxide-based coating film and a metal-based coating film, do not produce a large step between the indium oxide-based coating film and the metal-based coating film, cause little thinning of fine wires formed of the indium oxide-based coating film and the metal-based coating film, and can achieve etching with good linearity. The etching liquid composition of the present invention contains a ferric ion component; a hydrogen chloride component; and a component that is at least one type of compound selected from the group consisting of a compound represented by general formula (1) below and a straight chain or branched chain alcohol having 1 to 4 carbon atoms:

    wherein R 1 and R 3 are each independently a hydrogen atom or a straight chain or branched chain alkyl group having 1 to 4 carbon atoms, R 2 is a straight chain or branched chain alkylene group having 1 to 4 carbon atoms, and n is a number between 1 and 3.

    摘要翻译: 本发明的一个目的是提供一种蚀刻液组合物和蚀刻方法,当共同蚀刻由氧化铟基涂膜和金属基涂膜形成的多层膜时,不会在铟之间产生大的台阶 氧化物系被膜和金属系被膜之间的接合部分,由氧化铟系被膜和金属系被膜形成的细线几乎不会变薄,能够良好地线性地进行蚀刻。 本发明的蚀刻液组合物含有三价铁离子成分, 氯化氢组分; 和选自由下述通式(1)表示的化合物和碳原子数为1〜4的直链或支链的醇组成的组中的至少一种化合物的成分,式中,R 1及R 3分别独立地为 氢原子或具有1至4个碳原子的直链或支链烷基,R 2是具有1至4个碳原子的直链或支链亚烷基,且n是1至3之间的数字。